MwT-5
26 GHz High Gain, Dual Gate
GaAs FET
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
CHIP THICKNESS = 125
All Dimensions in Microns
50
45
75
241
70
45
FEATURES
•
10.5 dB GAIN IN A 6-18 GHz BALANCED CIRCUIT
•
+14 dBm P1dB IN A 6-18 GHz BALANCED CIRCUIT
•
0.3 MICRON REFRACTORY METAL/GOLD GATE
•
HIGH POWER ADDED EFFICIENCY
•
DIAMOND-LIKE CARBON (DLC) PASSIVATION
•
2 x 300 MICRON GATE WIDTH
75
50
406
75
DESCRIPTION
The MwT-5 is a dual gate GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straigth gate geometry of the MwT-5 makes it
equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal
system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss
ranges, insuring consistent circuit operation.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
mA
Vds= 4.0 V VG1S=VG2S=0.0 V
Transconductance
mS
Vds= 2.0 V VG2S=0.0 V
Pinch-off Voltage
V
Vds= 3.0 V VG2S=0V IDS=0mA
Gate-to-Source Breakdown Volt.
V
Igs= -0.4 mA
Gate-to-Drain Breakdown Volt.
V
Igd= -0.4 mA
Thermal
Resistance
MwT-5 Chip
30
23
40
-2.0
-5.0
-7.0
-8.0
-10.0
110
P1dB
SSG
Output Power at 1 dB Compression
VDS= 6.0 V IDS=0.5xIDSS
Small Signal Gain
VDS= 6.0 V IDS=0.5xIDSS
6-18 Bal.
12 GHz
6-18 Bal.
12 GHz
6-18 Bal.
12 GHz
12 GHz
dBm
dB
dB
dB
mA
15.0
15.0
10.0
12.0
18.0
18.0
10.5
13.0
6.0
3.5
11
55-
90
-4.5
NF Opt
Optimum Noise Figure
VDS= 6.0 V IDS=30 mA
GA
IDSS
Gain@Opt. NF
VDS= 6.0V IDS= 30 mA
Recommended IDSS Range
for Optimum P1dB
°C/W
150
*Overall Rth depends on case mounting.
DEVICE EQUIVALENT CIRCUIT MODEL
Lg1
GATE 1
Cpg1
Cgs1
gm1
tau1
Cgd1
Rs2
Cds2
Rd2
Rds1
Cds1
Rds2
Ri2 Cgs2
Rs1
gm2
tau2
Cgd2
Cpd2
Lg2
Ld2
DRAIN
PARAMETER (1)
Source Resistance
Source Inductance
Drain-Source Resistance
Drain Pad Capacitance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Rs
Ls
Rds
Cpd
Lg
Cpg
Cgs
Ri
Cgd
gm
tau
VALUE
0.7
0.04
100
0.01
0.173
0.01
0.159
4.37
0.105
44.0
2.0
Ω
nH
Ω
pF
nH
pF
pF
Ω
pF
mS
psec
Ri1
GATE 2
Ls1
SOURCE1
PARAMETER (2)
Gate Bond Wire Inductance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Source Resistance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Bond Wire Inductance
Drain Pad Capacitance
Lg
Cgs
Ri
Cgd
gm
tau
Rs
Rds
Cds
Rds
Ld
pF
VALUE
0.12
0.166
5.7
0.056
52.0
2.0
3.0
205
0.01
4.3
0.253
0.01
nH
pF
Ω
pF
mS
psec
Ω
Ω
pF
Ω
nH
pF
ORDERING INFORMATION
Chip
MwT-5
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-5
26 GHz High Gain, Dual Gate
GaAs FET
MwT-5
DUAL BIAS
Output Reference
Plane
19 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT
FP5
MwT-5
OPTIONAL BONDING
Output Reference
Plane
2 Mils
19 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
50
Ω
Output
Microstrip
50
Ω
Output
Microstrip
2 Mils
20 Mils
MwT
FP5
20 Mils
7 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
All Bond
Wires are 1.0
Mil Diameter
Gold Ridge
10x 10x 5 Mils
(2 each)
7 Mils Long
50
Ω
Input
Microstrip
2 Mils
Input Reference
Plane
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
All Bond
Wires are 1.0
Single Bias
Mil Diameter
(2 each)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
160.0
150
120.0
Ids (mA)
125
100
75°
C or Lower
°
75°
C or Lower
°
Absolute Maximum
Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°
C
125
100
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
80.0
40.0
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°C
°C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
95
145
0
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
0
2
4
Vds (V)
6
8
BIN SELECTION
BIN#
IDSS
(mA)
1
30-
35
2
35-
40
3
40-
45
4
45-
50
5
50-
55
6
55-
60
7
60-
65
8
65-
70
9
70-
75
10
75-
80
11
80-
85
12
85-
90
13
90-
95
14
95-
100
15
100-
105
16
105-
110
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
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