US2419
P-Ch 20V Fast Switching MOSFETs
General Description
The US2419 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2419 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
-20V
Applications
R
DS(ON)
205mΩ
ID
-2.3A
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Load Switch
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, -V
GS
@ -4.5V
Pulsed Drain Current
2
Total Power Dissipation
3
1
Rating
-20
±8
-2.3
-1.8
-5
1.56
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Continuous Drain Current, -V
GS
@ -4.5V
1
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-Case
1
1
Typ.
---
---
Max.
125
80
Unit
℃/W
℃/W
1
US2419
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-4.5V , I
D
=-2A
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
V
DD
=-12V , V
GS
=-4.5V , R
G
=3.3Ω
I
D
=-1A
V
DS
=-20V , V
GS
=-4.5V , I
D
=-2A
V
GS
=-2.5V , I
D
=-1.5A
V
GS
=-1.8V , I
D
=-1A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-16V , V
GS
=0V , T
J
=25℃
V
DS
=-16V , V
GS
=0V , T
J
=55℃
V
GS
=±8V
, V
DS
=0V
V
DS
=-5V , I
D
=-2A
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Min.
-20
---
---
---
Typ.
---
-0.011
170
235
315
-0.5
2.02
---
---
---
3.4
4.6
0.27
2.34
11.6
6.2
31.8
2.8
194
35.5
28.2
Max.
---
---
205
280
380
-1
---
-1
-5
±100
---
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
V
mV/℃
uA
nA
S
Unit
V
V/℃
mΩ
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
2,4
2
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-2.3
-5
-1
Unit
A
A
V
Diode Forward Voltage
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
US2419
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
4
360
I
D
=-2A
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
320
3
-I
D
Drain Current (A)
2
V
GS
=-2.5V
1
V
GS
=-1.8V
0
0
R
DSON
(mΩ)
280
240
200
160
120
-V
DS
, Drain-to-Source Voltage (V)
0.5
1
1.5
2
2
4
-V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
4
Fig.2 On-Resistance vs. Gate-Source
4.5
V
DS
=-20V
-V
GS
Gate to Source Voltage (V)
1.20
I
D
=-2A
3
-I
S
Source Current(A)
3
2
T
J
=150℃
1
T
J
=25℃
1.5
0
0.00
0
0.30
0.60
0.90
-V
SD
, Source-to-Drain Voltage (V)
0
1
Q
G
, Total Gate Charge (nC)
2
3
4
5
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
US2419
P-Ch 20V Fast Switching MOSFETs
1000
F=1.0MHz
10.00
10us
100us
1.00
Capacitance (pF)
Ciss
100
-I
D
(A)
10ms
100ms
DC
Coss
Crss
10
1
5
9
13
17
21
0.10
T
C
=25℃
Single Pulse
0.01
0.1
1
10
100
-V
DS
, Drain to Source Voltage (V)
-V
DS
(V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
0.01
T
ON
T
D = T
ON
/T
SINGLE PULSE
0.001
0.01
0.1
1
T
J
peak = T
C
+ P
DM
x R
θJC
10
100
1000
0.001
0.0001
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
PCB设计
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