US2307
P-Channel Enhancement Mode MOSFET
Features
•
-20V/-4A,
R
DS(ON)
=40mΩ (typ.) @ V
GS
=-4.5V
R
DS(ON)
=55mΩ (typ.) @ V
GS
=-2.5V
Pin Description
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Top View of SOT-23-3
S
Applications
G
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D
P-Channel MOSFET
reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Unitpower
1
US2307
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
2
(T
A
= 25°C unless otherwise noted)
Rating
-20
±12
V
GS
=-4.5V
-4
-16
-1.5
150
-55 to 150
T
A
=25°C
T
A
=100°C
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Parameter
Note : *Surface Mounted on 1in
pad area, t
≤
10sec.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C unless otherwise noted)
US2307
Min.
-20
-
-
-0.5
-
-
-
-
-
-
-
Typ.
-
-
-
-0.7
-
40
55
-0.75
12
2.1
2.9
Max.
-
-1
-30
-1
±100
55
72
-1.3
16
-
-
nC
mΩ
V
Test Conditions
Unit
V
GS
=0V, I
DS
=-250µA
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-4A
V
GS
=-2.5V, I
DS
=-2.5A
I
SD
=-0.5A, V
GS
=0V
V
µA
V
nA
R
DS(ON) a
Drain-Source On-state Resistance
V
SD
Q
g
Q
gs
Q
gd
a
Diode Forward Voltage
b
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-4A
2
US2307
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
US2307
Min.
-
-
-
-
-
-
-
-
Typ.
8
1135
200
110
6
7
72
45
Max.
-
-
-
-
12
14
131
82
ns
pF
Test Conditions
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
Ω
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
3
US2307
Typical Operating Characteristics
Power Dissipation
1.0
0.9
0.8
5.0
4.5
4.0
Drain Current
-I
D
- Drain Current (A)
0.7
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
A
=25 C,V
G
=-4.5V
0
20
40
60
80 100 120 140 160
o
P
tot
- Power (W)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
0.0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
30
10
Rd
s(o
n)
Lim
it
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
-I
D
- Drain Current (A)
300
µ
s
1ms
1
10ms
0.1
0.05
0.02
0.01
100ms
0.1
1s
DC
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
0.01
0.01
T
A
=25 C
0.1
1
10
100
o
1E-3
1E-4 1E-3 0.01
0.1
1
10
100
-V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
4
US2307
Typical Operating Characteristics (Cont.)
Output Characteristics
16
14
12
V
GS
= -3,-4,-5,-6,-7,-8,-9,-10V
160
140
Drain-Source On Resistance
-2V
R
DS(ON)
- On - Resistance (mΩ)
120
100
80
60
40
20
0
-I
D
- Drain Current (A)
V
GS
= -1.8V
10
8
6
4
2
0
0.0
V
GS
= -2.5V
V
GS
= -4.5V
-1.5V
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Transfer Characteristics
16
14
1.8
1.6
Gate Threshold Voltage
I
DS
= -250
µ
A
Normalized Threshold Voltage
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-I
D
- Drain Current (A)
10
8
6
4
2
0
0.0
T
j
=25 C
o
T
j
=125 C
o
o
T
j
=-55 C
0.5
1.0
1.5
2.0
2.5
3.0
0.0
-50 -25
0
25
50
75 100 125 150
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
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