UM6008
N-Ch 60V Fast Switching MOSFETs
General Description
The UM6008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM6008 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
60V
Applications
R
DS(ON)
90mΩ
ID
3A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
3
1
Rating
60
±20
3
2.4
12
10.73
11.2
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
25
Unit
℃/W
℃/W
1
UM6008
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=3A
V
GS
=4.5V , I
D
=2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=60V , V
GS
=0V , T
J
=25℃
V
DS
=48V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=2A
V
DS
=48V , V
GS
=4.5V , I
D
=2A
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
V
DS
=30V , V
GS
=10V , R
G
=3.3Ω,
I
D
=2A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.054
70
80
---
-4.96
---
---
---
13
5
1.68
1.9
1.6
7.2
25
14.4
511
38
25
Max.
---
---
90
100
2.5
---
1
5
±100
---
7.0
2.4
2.7
3.2
13
50
28.8
715
53
35
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=5A
Min.
2.5
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
2
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
9.7
5.8
Max.
3
12
1.2
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
F
=2A , dI/dt=100A/µs , T
J
=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=11.2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM6008
Typical Characteristics
12
100
N-Ch 60V Fast Switching MOSFETs
V
GS
=10V
10
I
D
=3A
95
V
GS
=7V
V
GS
=5V
I
D
Drain Current (A)
8
6
4
2
V
GS
=3V
R
DSON
(mΩ)
2.5
3
V
GS
=4.5V
90
85
80
0
0
0.5
75
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2
4
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
10
Fig.2 On-Resistance v.s Gate-Source
8
I
S
Source Current(A)
6
4
T
J
=150℃
T
J
=25℃
2
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
2.0
Fig.4 Gate-Charge Characteristics
Normalized On Resistance
1.5
1.0
0.5
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
UM6008
N-Ch 60V Fast Switching MOSFETs
1000
F=1.0MHz
Ciss
100.00
10.00
100us
1ms
Capacitance (pF)
100
I
D
(A)
1.00
10ms
100ms
Coss
0.10
Crss
10
1
5
9
13
17
21
25
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
DC
V
DS
Drain to Source Voltage(V)
V
DS
(V)
100
1000
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
A
+P
DM
XR
θJA
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
Microchip MCU
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