UM3003
P-Ch 30V Fast Switching MOSFETs
General Description
The UM3003 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM3003 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
-30V
Applications
R
DS(ON)
20mΩ
ID
-7.5A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
3
1
Rating
-30
±20
-7.5
-5.8
-50
176
-38
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Continuous Drain Current, V
GS
@ -10V
1
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
36
Unit
℃/W
℃/W
1
UM3003
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-6A
V
GS
=-4.5V , I
D
=-4A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25℃
V
DS
=-24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-6A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=-15V , V
GS
=-4.5V , I
D
=-6A
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=-15V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-6A
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.022
16
25
-1.5
4.6
---
---
---
17
13
12.6
4.8
4.8
4.6
14.8
41
19.6
1345
194
158
Max.
---
---
20
32
-2.5
---
-1
-5
±100
---
26
17.6
6.7
6.7
9.2
26.6
82
39.2
1883
272
221
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-20A
Min.
49
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
2
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-6A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
16.3
5.9
Max.
-7.5
-50
-1.2
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM3003
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
50
I
D
=-6A
40
-I
D
Drain Current (A)
44
30
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
20
10
0
0
0.5
-V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
R
DSON
(mΩ)
30
16
4
6
-V
GS
(V)
8
10
Fig.1 Typical Output Characteristics
12
Fig.2 On-Resistance v.s Gate-Source
10
-I
S
Source Current(A)
8
6
4
T
J
=150℃
T
J
=25℃
2
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
1.5
2.0
Fig.4 Gate-Charge Characteristics
1
0.5
0
-50
Normalized On Resistance
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (
℃)
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
UM3003
P-Ch 30V Fast Switching MOSFETs
10000
100.00
F=1.0MHz
100us
Ciss
10.00
Capacitance (pF)
1000
1ms
Coss
100
-I
D
(A)
1.00
10ms
100ms
Crss
0.10
T
A
=25 C
Single Pulse
10
1
5
o
DC
-V
DS
Drain to Source Voltage(V)
9
13
17
21
25
0.01
0.01
0.1
-V
DS
(V)
1
10
100
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
A
+P
DM
XR
JA
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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