T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Wideband and narrowband defense and
commercial communication systems
– General Purpose RF Power
– Jammers
– Radar
– Professional radio systems
– WiMAX
– Wideband amplifiers
– Test instrumentation
– Cellular infrastructure
Available Package
Product Features
• Frequency: DC to 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Output Power (P
3dB
): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package
Package Information
Package Type
Q3
Description
5.0mm x 4.0mm ceramic air
cavity straight lead package
Base
CuMo
General Description
The TriQuint T1G6000528-Q3 is a 7 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 6 GHz
and typically provides >10 dB gain at 6 GHz. The
device is constructed with TriQuint’s proven 0.25
µm production process, which features advanced
field plate techniques to optimize power and effi-
ciency at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
Ordering Information
Material No.
1075579
1081733
Part No.
T1G6000528-Q3
T1G6000528-Q3-
EVB3
Description
Packaged part
Narrowband
3.0 to 3.5 GHz
evaluation
board
ECCN
EAR99
EAR99
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
T1G6000528-Q3
Specifications
Absolute Maximum Ratings
1
Sym
V
+
V
-
I
|I
G
|
P
D
T
CH
Notes:
1
2
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Parameter
Positive Supply Value
2
Negative Supply Voltage Range
Positive Supply Current
2
Gate Supply Current
Power Dissipation
2
Operating Channel Temperature
2
Value
28
- 10 V to 0 V
0.8 A
12.5 mA
10 W
200°C
Absolute maximum ratings at 3 GHz
Absolute maximum ratings are set based on industry recommended
standard mean time to failure (MTTF) greater than 1M hours while
operating at a maximum case temperature of 85C . Operating at lower
maximum case temperatures allows maximum operating voltage to
be increased up to a maximum of 40V. Application specific limits can
be determined with engineering guidance from TriQuint.
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
1.E+15
Medi Lifetime,
(Hours)
ian
Median Lifetime, Tm
Tm (Hours)
1.E+14
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
25
FET7
50
75
100
125
150
175
200
225
250
275
Channel Temperature, Tch (°C)
Channel Temperature, Tch (°C)
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–2–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
T1G6000528-Q3
Specifications
Thermal Information
Test Conditions
DC at 85°C Case
Notes:
1
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
T
CH
(°C)
199
Ѳ
JC
(°C/W)
1
11.2
Thermal resistance (channel to backside of case)
T1G6000528-Q3 Max Channel Temperture vs Pulse Width
T1G6000528-Q3 Max Channel Temperature vs Pulse Width
(Tbase = 85° C, Pdiss = 3 W/mm)
180
160
Maximum Channel Temperature (degC)
nel
Maximum Channel Temperature (degC)
140
120
100
80
60
40
20
0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
(Tbase = 85° C, Pdiss = 3 W/mm)
5% duty cycle
25% duty cycle
50% duty cycle
Pulse Width (sec)
Pulse Width (sec)
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–3–
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
T1G6000528-Q3
Electrical Specifications
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Recommended operating conditions apply unless otherwise specified: T
A
=25 °C
DC Characteristics
Characteristics
Break-Down Voltage Drain Source
Gate Quiescent Voltage
Gate Threshold Voltage
Saturated Drain Current
Symbol
BV
DSX
V
GS (Q)
V
GS (th)
I
DSX
Min
85
Typ
120
-3.9
-4.5
2
Max
Unit
V
V
V
A
Conditions
V
GS
= -8 V; I
D
=1 mA
V
DS
=28 V; I
DQ
=100 mA
V
DS
=10 V; I
D
=5 mA
V
DS
=5 V; V
GS
=0 V
RF Characteristics
Characteristics
Load Pull Performance at 6.0 GHz (V
DS
= 28 V, I
DQ
= 50 mA, CW)
Symbol
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
G
LIN
P
3dB
DE
3dB
PAE
3dB
G
3dB
VSWR
Min
13.0
8.0
55
50
10.0
15.5
8.9
55
50
12.5
Typ
13.5
10.0
65
55
10.5
16.9
11.0
58
53
13.9
10:1
Max
Unit
dB
W
%
%
dB
dB
W
%
%
dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Impedance Mismatch Ruggedness
Performance at 3.3 GHz in the 3.0 to 3.5 GHz Fixture (VDS = 28 V, IDQ = 50 mA, 200msec pulse, 20% duty-cycle)
Narrowband Performance at 3.5 GHz (VDS = 28 V, IDQ = 50 mA, CW at P1dB, applied for 3.5 secs)
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
– 4 –
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
T1G6000528-Q3
Device Characterization Data
S-Parameter Smith Chart
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
T1G6000528-Q3
V
DS
=28V, I
DQ
=50 mA
j10
j5
j20
j2
6000MHz
j50
0
−j2
2
5
10
6000MHz
20
S22
50
100MHz
∞
−j50
S11
−j5
−j10
−j20
Small-Signal Gain
Maximum Stable Gain of T1G6000528-Q3
V
DS
=28V, I
DQ
=50 mA
35
30
Gmax vs. Frequency
Max Stable Gain
25
Gain (dB)
20
15
10
5
0
0
1000
2000
3000
Frequency (MHz)
4000
5000
6000
The data was taken in a package fixture. The reference planes are at the package interface.
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
– 5 –
Disclaimer: Subject to change without notice
Connecting the digital World to the Global Network®
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