WILLAS
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
FM120-M
SESOTA03C
THRU
FM1200-M
Pb Free Product
Features
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
•
Low profile surface mounted application in order to
General Description
Features
optimize board space.
0.146(3.7)
•
Low
SESOTA03C is
efficiency.
The
power loss, high
a dual monolithic voltage
2 Unidirectional Transil functions
0.130(3.3)
0.012(0.3) Typ.
•
High current capability, low forward voltage drop.
suppressor designed to protect components which
Low leakage current: I
R
max< 20
μA
at V
RM
•
High surge capability.
150W peak pulse power(8/20μs)
are
•
connected
for overvoltage protection.
Guardring
to data and transmission lines
0.071(1.8)
•
Ultra high-speed switching.
Transient protection for data lines as per
0.056(1.4)
against ESD. It clamps the voltage just above the
•
Silicon epitaxial planar chip, metal silicon junction.
logic
•
level supply for positive transients and to a
Pb-Free package is available
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
diode
MIL-STD-19500 /228
for negative transients. It
drop below ground
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
can also work
product for packing code suffix "H"
Halogen free
as bidirectional suppressor by
Mechanical
and 2.
connecting only pin1
data
0.040(1.0)
Complies with the following standards
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
IEC61000-4-2
•
Case : Molded
0.031(0.8) Typ.
0.031(0.8) Typ.
Applications
plastic, SOD-123H
,
Level 4 15 kV (air discharge)
•
Computers
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
8 kV(contact discharge)
Printers
Dimensions in inches and
3
•
Polarity : Indicated by cathode band
MIL STD 883E - Method 3015-7 Class
(millimeters)
Communication systems
•
Mounting Position : Any
25 kV HBM (Human Body Model)
•
Weight :
diagram
Functional
Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SOT-23
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Absolute Ratings (T
amb
=25
°C )
Symbol
Typical Junction Capacitance (Note 1)
Parameter
-55 to +125
P
Temperature Range
Peak Pulse
Operating
PP
Power (t
p
= 8/20μs)
T
J
40
Value
Units
120
150
-55 to +150
W
℃
Storage Temperature
Maximum
Range
T
L
TSTG
lead temperature for soldering during 10s
-
65
to +175
260
°C
°C
°C
0.9
0.92
T
stg
T
j
Storage Temperature
CHARACTERISTICS
Range
-55 to +155
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
°C
V
F
Range
0.50
0.70
0.85
-40 to +125
0.5
10
U
Maximum
op
T
Forward Voltage at 1.0A DC
Operating Temperature
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
I
R
Maximum junction temperature
@T A=125℃
150
m
NOTES:
Electrostatic discharge
15
8
kV
contact discharge
V
PP
IEC61000-4-2
of
discharge
1- Measured at 1 MHZ and applied reverse voltage
air
4.0 VDC.
2- Thermal Resistance From Junction to Ambient
IEC61000-4-2
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SESOTA03C
THRU
FM1200-M
Pb Free Product
Features
Electrical Parameter
excellent power dissipation offers
•
Batch process design,
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Symbol
optimize board space.
Parameter
•
Low power loss, high efficiency.
Peak Pulse
Maximum Reverse
I
•
High current capability, low forward voltage drop.
PP
Current
•
High surge capability.
V
C
Clamping Voltage @ I
PP
•
Guardring for overvoltage protection.
•
Ultra
Working Peak Reverse Voltage
V
RWM
high-speed switching.
epitaxial planar chip, metal silicon
•
Silicon
Maximum Reverse Leakage
junction.
Current
I
R
Lead-free parts meet environmental standards of
•
@ V
RWM
MIL-STD-19500 /228
I
Test
for packing
•
T
RoHS product
Current
code suffix "G"
Halogen free product for packing code suffix "H"
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
BR
Breakdown Voltage @ I
T
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Electrical Characteristics
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
BR
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
C
Ratings at 25℃ ambient temperature unless otherwise specified.
1).8/20
phase half wave, 60Hz, resistive of inductive load.
Single
waveform used. (see fig2.)
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Dimensions in inches
I
R
(millimeters)
and
•
Polarity : Indicated by cathode band
I
T
V
RWM
Typ. 0v
Part Numbers
Position : Any
Min.
Typ.
Max.
•
Mounting
bias
•
Weight : Approximated 0.011 gram
V
V
V
mA
V
µA
pF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SESOTA03C
5.2
5.6
6.0
5
3.3
1
200
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
Typical Characteristics
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig2. Pulse Waveform
Fig3.Power Derating Curve
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Dual Transient Voltage Suppressors Array for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESOTA03C
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
.063(1.60)
.047(1.20)
•
MIL-STD-19500 /228
.122(3.10)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.106(2.70)
.006(0.15)MIN.
•
Low power loss, high efficiency.
SOT-23 mechanical data
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM
.080(2.04)
AND ELECTRICAL CHARACTERISTICS
RATINGS
Ratings at 25℃ ambient temperature unless otherwise specified.
.070(1.78)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.004(0.10)MAX.
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.008(0.20)
.003(0.08)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
.086(2.20)
.110(2.80)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
Vo
.055(1.40)
.035(0.89)
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.020(0.50)
R
ΘJA
.013(0.35)
C
J
T
J
Am
-55 to +150
℃
P
-55 to +125
-
65
to +175
℃
Maximum Forward Voltage at 1.0A DC
Dimensions
TSTG
in inches and (millimeters)
V
F
@T A=125℃
℃
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
Marking
Rated DC Blocking Voltage
I
R
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Type number
Marking code
A3
2- Thermal Resistance From Junction to Ambient
SESOTA03C
2012-06
2012-09
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
stm32/stm8
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