FM120-M
SESD5ZxxV
THRU
Transient Voltage Suppressors
BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
for ESD Protection
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
General Description
optimize board space.
•
Low profile surface mounted application in order to
Features
0.146(3.7)
Small Body Outline Dimensions
0.130(3.3)
•
Low power
Series are designed to protect voltage
The SESD5Z
loss, high efficiency.
•
High current capability, low forward voltage drop.
sensitive components from ESD and transient voltage
•
High surge capability.
events. Excellent clamping capability, low leakage, and
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
fast response time, make these parts ideal for ESD
•
Silicon epitaxial planar chip, metal silicon junction.
protection on designs where board
standards
is at a
•
Lead-free parts meet environmental
space
of
MIL-STD-19500 /228
premium.
•
RoHS product for packing code suffix "G"
Low Body Height
Stand−off Voltage: 3 V
−
12.0 V
0.012(0.3) Typ.
µs
Peak Power up to 200 Watts @ 8 x 20
0.056(1.4)
Pulse
Low Leakage
Response Time is Typically < 1 ns
0.071(1.8)
Halogen free product for packing code suffix "H"
Mechanical data
Applications
•
Epoxy : UL94-V0 rated flame retardant
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Functional diagram
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Cellular
Molded plastic, SOD-123H
•
Case :
phones
,
•
Terminals :Plated
Portable devices
terminals, solderable per MIL-STD-750
Complies with the following standards
Method
Digital cameras
2026
IEC61000-4-2
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Power supplies
Level 4 15 kV (air discharge)
•
Mounting Position : Any
8 kV(contact discharge)
•
Weight : Approximated 0.011 gram
MIL STD 883E - Method 3015-7 Class 3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
25 kV HBM (Human Body Model)
Pb-Free package is available
0.040(1.0)
0.024(0.6)
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
0.031(0.8) Typ.
0.031(0.8) Typ.
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
SOD-523
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
=25°C
Absolute Ratings
(T
Operating Temperature Range
amb
)
C
J
-55 to +125
40
120
Value
200
0.85
-55 to +150
Symbol
Storage Temperature Range
P
PP
T
L
Peak Pulse Power (t
p
= 8/20μs)
V
F
I
R
Parameter
TSTG
T
J
-
65
to +175
Units
W
°C
0.9
0.92
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
T
op
Operating
NOTES:
T
j
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum lead temperature for soldering during 10s
260
°C
T
stg
Storage Temperature Range
Maximum Average Reverse Current at @T A=25℃
0.50
0.70
0.5
10
-55 to +155
-40 to +125
150
±15
±8
40
25
400
@T A=125℃
Temperature Range
°C
°C
kV
A
kV
V
Maximum junction temperature
IEC61000-4-2 (ESD)
IEC61000-4-4 (EFT)
ESD Voltage
Per Human Body Model
Per Machine Model
air discharge
contact discharge
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Transient Voltage Suppressors for ESD Protection
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SESD5ZxxV
THRU
FM1200-M
Package outline
SOD-123H
Pb Free Product
Electrical Parameter
Features
•
Batch process design, excellent power dissipation offers
better
Symbol
reverse leakage current and thermal resistance.
Parameter
•
Low profile surface mounted application in order to
I
PP
optimize board space.
Maximum Reverse Peak Pulse Current
•
Low power loss, high efficiency.
V
C
High current capability, low forward voltage drop.
Clamping Voltage @ I
PP
•
•
High
Working Peak
V
RWM
surge capability.
Reverse Voltage
•
Guardring for overvoltage protection.
Maximum Reverse Leakage Current @
I
•
Ultra high-speed switching.
R
V
RWM
•
Silicon epitaxial planar chip, metal silicon junction.
I
•
T
Lead-free parts meet environmental standards of
Test Current
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
•
RoHS product for packing code suffix
I
"G"
Breakdown Voltage @
T
BR
free product for packing code suffix "H"
I
F
Halogen
Forward Current
0.040(1.0)
V
F
Forward Voltage @ I
F
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals :Plated terminals,
Ratings at
per
ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
Electrical Characteristics
solderable
25°C
MIL-STD-750
MIL-STD-19500 /228
Mechanical data
Part Numbers
Method 2026
V
BR
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Min.
Typ.
Max.
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
V
F
C
I
T
V
RWM
I
R
Max.
V
1.25
1.25
1.25
16
I
F
Typ. 0v
bias
Ratings at 25℃ ambient temperature unless otherwise specified.
SESD5Z3V3
5.0
6.0
7.0
1
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
V
V
mA
V
µA
mA
200
200
200
18
80
200
56
80
pF
35
30
25
115
105
150
3.0
5.0
7.0
13
21
1
1
1
SESD5Z5V
SESD5Z7V
Marking Code
Maximum RMS Voltage
RATINGS
6.0
6.6
7.1
7.5
8.1
8.6
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
1
1
Maximum Recurrent Peak Reverse Voltage
SESD5Z12V
13.5
14.2
15.0
V
RRM
V
RMS
V
DC
I
O
1
12
20
14
20
30
12.0
30
14
40
28
40
1
15
50
35
50
60
1.25
60
10
100
70
100
Maximum DC Blocking Voltage
*Surge current waveform per Figure 1.
42
1.0
30
25
150
120
200
140
200
Maximum Average Forward Rectified Current
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25℃．
I
FSM
R
ΘJA
C
J
T
J
TSTG
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Characteristics
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig1. Pulse Waveform
Fig2.Power Derating Curve
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FM120-M
SESD5ZxxV
THRU
Transient Voltage Suppressors
BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
for ESD Protection
SOD-123
PACKAGE
WILLAS
Pb Free Produc
Features
•
Batch process design, excellent power dissipation offers
Application Note
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
Electrostatic
surface mounted application
major cause of failure in electronic systems. Transient Voltage
•
Low profile
discharge (ESD) is a
in order to
optimize board space.
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming
0.146(3.7)
•
Low power loss, high efficiency.
0.130(3.3)
0.012(0.3) Typ.
transient to
current
enough level
forward voltage drop.
to the protected
semiconductor is prevented.
•
High
a low
capability, low
such that damage
•
High surge capability.
Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection
•
Guardring for overvoltage protection.
0.071(1.8)
elements, connected between the signal line to ground. As the transient rises above the operating voltage of
•
Ultra high-speed switching.
0.056(1.4)
•
Silicon epitaxial planar chip,
low
silicon junction.
the device, the TVS becomes a
metal
impedance path diverting the transient current to ground. The SESD5Z
•
Lead-free parts meet environmental standards of
Series
MIL-STD-19500 /228
is the ideal board evel protection of ESD sensitive semiconductor components.
•
RoHS product for packing code
allows
The tiny SOD-523 package
suffix "G"
design flexibility in the design of high density boards where the space
Halogen free product for packing code suffix "H"
saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD
.
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
SOD-523 Mechanical Data
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.035(0.90)
.028(0.70)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
.051(1.30)
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.043(1.10)
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
.014(0.35)
.009(0.25)
18
80
10
100
115
150
105
150
120
200
140
200
.008(0.20)
.002(0.05)
56
70
.028(0.70)
100
60
80
.020(0.50)
1.0
30
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
-55 to +125
40
120
-55 to +150
-
65
to +175
.067(1.70)
CHARACTERISTICS
.059(1.50)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
TSTG
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
Dimensions
in inches and (millimeters)
Marking
Type number
SESD5Z5V
Marking code
ZE
ZF
ZH
12V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
SESD5Z3V3
SESD5Z7V
SESD5Z12V
2012-06
2012-09
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
京公网安备 11010802033920号
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