WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD099-04BT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
Pb Free Product
•
Low profile surface mounted application in order to
DESCRIPTIONS
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
The
SESD099-04BT1
•
High surge capability.
is a 4-channel ultra low capacitance rail
clamp ESD protection diodes array. Each channel consists of
•
Guardring for overvoltage protection.
•
Ultra
of ESD diodes that steer positive or negative ESD current
a pair
high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
to
Lead-free parts meet environmental standards of
is integrated
•
either the positive or negative rail. A zener diode
in
MIL-STD-19500 /228
the positive and negative supply rails.
to the array between
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
0.071(1.8)
0.056(1.4)
4
•
RoHS product for packing code suffix "G"
1
In the typical applications, the negative rail pin (assigned as GND)
Halogen free product for packing code suffix "H"
2
is connected with
data
Mechanical
system ground. The Positive ESD current is
steered
: UL94-V0 rated flame
an ESD
•
Epoxy
to the ground through
retardant
diode and Zener diode and
the positive ESD voltage is clamped
•
Case : Molded plastic, SOD-123H
to the zener voltage.
,
The
SESD099-04BT1
is idea to protect high speed data
•
Terminals :Plated terminals, solderable per MIL-STD-750
lines.
Method
is provided for easy PCB layout.
Three package type
2026
3
SOT-363
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
FEATURES
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
APPLICATIONS
* 4 channels of ESD protection;
* HDMI
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
/ DVI ports;
Provides ESD protection to IEC61000-4-2 level
Ratings at
*
25℃ ambient temperature unless otherwise specified.
4
Single phase
-
half wave, 60Hz, resistive of inductive load.
±15kV air discharge
For capacitive load, derate current by 20%
- ±8kV contact discharge;
RATINGS
Marking Code
* Display Port interface;
* 10M / 100M / 1G Ethernet;
* USB 2.0 interface;
15
16
12
* Channel I/O to I/O
Voltage
capacitance: 0.45pF(Max)
20
Maximum Recurrent Peak Reverse
V
RRM
* Channel I/O to GND capacitance: 0.9pF(Max)
V
RMS
V
DC
I
O
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
13
30
21
30
14
40
28
40
* VGA interface
* Set-top box;
50
60
* PC / Note
60
book
50
1.0
30
40
120
18
80
80
10
100
70
100
115
150
105
150
120
200
140
200
V
* Low clamping voltage;
Maximum RMS Voltage
*
Blocking Voltage
Maximum DC
Low operating voltage;
Maximum Average Forward Rectified Current
* Improved zener structure;
14
20
* Flat panel
42
Monitors
56
TVs;
/
35
V
V
A
*
Surge Current 8.3 ms single
easy high speed
Peak Forward
Optimized package for
half sine-wave
*
on rated load (JEDEC
superimposed
RoHS compliant.
method)
*
Pb-Free package
Typical Thermal Resistance (Note 2)
is
data lines PCB layout;
I
FSM
A
available
R
ΘJA
Typical Junction Capacitance (Note
packing code suffix ”G”
C
J
RoHS product for
1)
Operating Temperature Range
T
J
Halogen free product for packing code suffix “H”
Storage Temperature Range
TSTG
-55 to +125
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
ORDERING INFORMATION
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Part No.
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
0.50
0.70
0.5
10
Material
0.85
0.9
0.92
V
@T A=125℃
Package
Marking
C96
Shipping
3000Tape&Reel
m
NOTES:
SESD099-04BT1
SOT-363
Halogen
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
Batch process design,
PIN
•
CONFIGURATION
excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD099-04BT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-363
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
ABSOLUTE MAXIMUM RATINGS
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Peak Pulse Power(8/20μs)
•
Mounting Position : Any
Peak Pulse Current(8/20μs)
•
Weight : Approximated 0.011 gram
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Ratings at 25℃ ambient temperature unless otherwise specified.
Characteristics
Symbol
P
PP
I
PP
V
ESD1
V
ESD2
T
opr
T
stg
12
20
13
30
21
14
40
28
40
Dimensions in inches and (millimeters)
Ratings
150
5
±15kV
±8kV
Unit
W
A
kV
kV
°C
°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
Operating Temperature Range
For capacitive load, derate current by 20%
-55 ~ +125
-55 ~ +150
15
50
35
50
16
60
42
60
Typ.
1.0
30
40
120
18
80
56
80
Max.
Storage Temperature Range
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
14
V
RMS
I
O
V
RRM
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
Maximum Average Forward Rectified Current
Characteristics
Symbol
V
RWM
V
BR
I
R
20
30
V
Test Conditions
DC
Any I/O pin to GND
I
FSM
t
=1mA;
R
ΘJA
Min.
Unit
V
Vo
Reverse Working
A
Peak Forward Surge Current 8.3 ms single half sine-wave
Voltage
superimposed on rated load (JEDEC method)
5
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Reverse Breakdown
Voltage
Any
J
pin to GND
I/O
C
TSTG
Any I/O pin to GND
6
1
V
μA
℃
P
Reverse Leakage
Operating Temperature Range
-55
V
RWM
=5V, T=25°C;
to +125
T
J
-55 to +150
℃
Storage Temperature Range
Current
CHARACTERISTICS
Positive Clamping
-
65
to +175
℃
I
PP
=1A, t
P
=8/20Μs;
V
C1
Positive pulse;
V
F
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Voltage
0.50
8.5
0.70
12.0
0.85
V
0.9
0.92
Vo
Any I/O pin to GND
Negative pulse;
I/O pin to GND
0.35
V
R
=0V, f=1MHz;
Between I/O pins
V
R
=0V, f=1MHz;
Any I/O pin to GND
1.8
0.5
10
NOTES:
Negative Clamping
@T A=125℃
I =1A, t =8/20μS;
PP
P
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Any
Voltage
V
C2
V
2- Thermal Resistance From Junction to Ambient
Junction Capacitance
Between Channel
C
J1
C
J2
0.45
0.9
pF
pF
Junction Capacitance
Between I/O And GND
2012-06
2012-09
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
SESD099-04BT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
•
Low profile surface mounted application in order to
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD099-04BT1
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
4-CHANNEL LOW CAPACITANCE ESD
SOD-123 PACKAGE
PROTECTION DIODES ARRAY
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
SOT-363
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
.087(2.20)
•
High surge capability.
•
Guardring for overvoltage protection.
.071(1.80)
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
SESD099-04BT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
Pb Free Product
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.054(1.35)
.045(1.15)
0.071(1.8)
0.056(1.4)
.096(2.45)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.030(0.75)
Method
.021(0.55)
2026
0.031(0.8) Typ.
.071(1.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Any
•
Mounting Position :
.056(1.40)
•
Weight : Approximated 0.011 gram
.010(0.25)
.003(0.08)
inches and (millimeters)
Dimensions in
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Forward Rectified Current
V
.016(0.40)
RMS
V
.004(0.10)
DC
I
O
I
FSM
R
ΘJA
14
20
.043(1.10)
.032(0.80)
V
RRM
12
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
J
Dimensions in inches and
-55 to +125
(millimeters)
T
J
TSTG
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.5 mm (min)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
0.85
10
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.4 mm (min)
1.9 mm
2012-09
2012-06
0.65 mm 0.65 mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
京公网安备 11010802033920号
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