WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board
DESCRIPTIONS
space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
The
SESD099-04AT1
is a 4-channel ultra low capacitance rail
•
High surge capability.
clamp ESD protection diodes array. Each channel consists of
•
Guardring for overvoltage protection.
a pair of ESD diodes that steer positive or negative ESD current
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
to either the positive or negative rail. A zener diode is integrated
•
Lead-free parts meet environmental standards of
in to the array between the positive and negative supply rails.
MIL-STD-19500 /228
•
RoHS product for packing code suffix
rail pin (assigned as GND)
In the typical applications, the negative
"G"
Halogen free product for packing code suffix "H"
FM120-M
SESD099-04AT1
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
4
5
2
1
0.071(1.8)
0.056(1.4)
6
is connected with system ground. The Positive ESD current is
•
Epoxy : UL94-V0 rated flame retardant
the positive ESD voltage is clamped to the zener voltage.
•
Case : Molded plastic, SOD-123H
The
099-04AT1 is idea to protect high speed data lines.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Three package type is provided for easy PCB layout.
Method 2026
steered to the ground through an ESD diode and Zener diode and
0.031(0.8) Typ.
Mechanical data
SOT-23-6
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
FEATURES
•
Weight : Approximated 0.011 gram
* 4 channels of ESD protection;
* Provides ESD protection to IEC61000-4-2 level 4
Dimensions in inches and (millimeters)
APPLICATIONS
* HDMI / DVI ports;
* Display Port interface;
* 10M / 100M / 1G Ethernet;
* USB 2.0 interface;
13
30
21
30
14
Set-top box;
16
15
*
40
50
60
28
40
18
80
56
80
1.0
30
40
120
10
100
70
100
115
150
105
150
120
200
140
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
- ±15kV
wave, 60Hz, resistive of inductive load.
Single phase half
air discharge
For capacitive load, derate current by 20%
- ±8kV contact discharge;
SYMBOL
RATINGS
* Channel I/O to GND capacitance: 0.9pF(Max)
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
* VGA interface
Marking
Channel
*
Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
I/O to I/O capacitance: 0.45pF(Max)
* Low clamping voltage;
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
* Flat panel Monitors / TVs;
* PC / Note book
50
35
42
60
V
V
Maximum DC Blocking Voltage
* Low operating voltage;
V
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
* Improved zener structure;
A
* Optimized package for easy high speed data lines PCB layout;
* RoHS compliant.
*
Pb-Free package is available
Typical Thermal Resistance (Note 2)
R
ΘJA
RoHS product for packing code suffix ”G”
Typical Junction Capacitance (Note 1)
C
J
Halogen free product for packing code suffix “H”
Operating Temperature Range
Storage Temperature Range
A
-55 to +125
-55 to +150
℃
T
J
-
65
to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Part No.
NOTES:
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Maximum Average Reverse Current at @T A=25℃
ORDERING INFORMATION
V
F
I
R
0.50
0.70
0.5
0.85
10
0.9
0.92
V
@T A=125℃
Package
Marking
C96
Material
Halogen
Shipping
3000Tape&Reel
m
099-04AT1
SOT-23-6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage
PIN CONFIGURATION
current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
FM120-M
SESD099-04AT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
Pb Free Product
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
SOT-23-6
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
ABSOLUTE MAXIMUM RATINGS
Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Characteristics
•
Polarity : Indicated by cathode band
Peak
Mounting Position : Any
•
Pulse Power(8/20μs)
•
Pulse
: Approximated 0.011 gram
Peak
Weight
Current(8/20μs)
Symbol
P
PP
I
PP
Ratings
in inches and (millimeters)
Unit
Dimensions
150
5
W
A
kV
kV
°C
°C
V
ESD1
±15kV
ESD per IEC 61000-4-2(Air)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
ESD per IEC 61000-4-2(Contact)
Single phase half wave, 60Hz, resistive of inductive load.
Operating Temperature Range
For capacitive load, derate current by 20%
V
ESD2
T
opr
T
stg
±8kV
-55 ~ +125
-55 ~ +150
16
60
42
60
1.0
30
40
120
Storage Temperature Range
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
V
RRM
V
DC
I
O
12
20
20
13
30
21
30
14
40
28
40
15
50
35
50
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
Maximum RMS Voltage
V
RMS
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
14
Maximum Average Forward Rectified Current
V
V
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
5
Unit
V
Peak Forward Surge Current 8.3 ms single
V
RWM
half sine-wave
Any
superimposed on rated load (JEDEC method)
Reverse Working
Voltage
I/O
I
FSM
pin to GND
Reverse Breakdown
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Voltage
Operating Temperature Range
Storage Temperature Range
V
BR
I
R
t
=1mA;
R
ΘJA
Any
C
J
pin to GND
I/O
Any I/O pin to GND
V
F
Positive pulse;
TSTG
6
V
μA
℃
Reverse Leakage
Current
T
V
RWM
J
=5V, T=25°C;
-55 to +125
-
65
to +175
1
-55 to +150
Positive Clamping
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
I
PP
=1A, t
P
=8/20Μs;
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
SYMBOL
FM120-MH
0.50
0.70
8.5
I
R
Any I/O pin to GND
0.5
10
U
Voltage
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
V
C1
12.0
0.85
V
0.9
0.92
V
m
Negative Clamping
NOTES:
I
PP
=1A, t
P
=8/20μS;
Negative pulse;
Any I/O pin to GND
0.35
1.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Voltage
V
C2
V
2- Thermal Resistance From Junction to Ambient
Junction Capacitance
Between Channel
C
J1
C
J2
V
R
=0V, f=1MHz;
Between I/O pins
V
R
=0V, f=1MHz;
Any I/O pin to GND
0.45
0.9
pF
pF
Junction Capacitance
Between I/O And GND
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
•
Batch process design, excellent power dissipation offers
TYPICAL
reverse leakage current and thermal resistance.
ELECTRICAL CHARACTERISTICS CURVE
better
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
SESD099-04AT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
SOD-123H
Pb Free Product
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
SESD099-04AT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Package outline
Features
•
Low profile surface mounted application in order to
optimize board space.
SOD-123H
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
SOT-23-6
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.098(2.50)
SYMBOL
.122(3.10)
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
.110(2.80)
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
.051(1.30)
.070(1.75)
18
80
56
80
1.0
30
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
.118(3.00)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.067(1.70)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
SYMBOL
.083(2.10)
V
0.9
0.92
V
F
0.50
0.70
0.85
@T A=125℃
I
R
.036(0.90)
.057(1.45)
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.000(0.01)
.051(1.30)
2- Thermal Resistance From Junction to Ambient
.010(0.25)
.020(0.50)
.033(0.85)
.040(1.05)
2012-09
2012-06
Dimensions in inches and (millimeters)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
能源基础设施
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