TS9002
Low-Power Single/Dual-Supply Dual Comparator with Reference
FEATURES
♦ Ultra-Low Quiescent Current:
4μA (max), Both Comparators plus Reference
♦ Single or Dual Power Supplies:
Single: +2.5V to +11V
Dual: ±1.25V to ±5.5V
♦ Input Voltage Range Includes Negative Supply
♦ 7μs Propagation Delay
♦ Push-pull TTL/CMOS-Compatible Outputs
♦ Crowbar-Current-Free Switching
♦ Continuous Source Current Capability: 40mA
♦ Internal 1.182V ±0.75% Reference
♦ Adjustable Hysteresis
♦ 8-pin MSOP Package
DESCRIPTION
The TS9002 low-voltage, micropower dual analog
comparator is form-factor identical to the MAX923
analog comparator
with improved
electrical
specifications. Ideal for 3V or 5V single-supply
applications, the TS9002 draws 11% lower supply
current with a 25%-better initial accuracy reference
voltage. The TS9002 joins Touchstone’s TS9001-1/2
analog comparators in the “NanoWatt Analog™” high
performance analog integrated circuits portfolio. The
TS9002 can operate from single +2.5V to +11V
supplies or from ±1.25V to ±5.5V dual supplies.
The TS9002 exhibits an input voltage range from the
negative supply rail to within 1.3V of the positive
supply rail. In addition, its push-pull output stage is
TTL/CMOS compatible and capable of sinking and
sourcing current. It also incorporates an internal
1.182V
±0.75%
voltage
reference.
Without
complicated feedback configurations and only
requiring two additional resistors, adding external
hysteresis via a separate pin is available on the
TS9002’s HYST pin.
The TS9002 is fully specified over the -40ºC to +85ºC
temperature range and is available in a 8-pin MSOP
package.
APPLICATIONS
Threshold Detectors
Window Comparator
Level Translators
Oscillator Circuits
Battery-Powered Systems
TYPICAL APPLICATION CIRCUIT
A 5V, Low-Parts-Count, High-Accuracy Window Detector
The Touchstone Semiconductor logo is a registered
trademark of Touchstone Semiconductor, Incorporated.
Page 1
© 2012 Touchstone Semiconductor, Inc. All rights reserved.
TS9002
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (V+ to V-, V+ to GND, GND to V-)......-0.3V, +12V
Voltage Inputs
(IN+, IN-)..............................................(V+ + 0.3V) to (V- - 0.3V)
HYST…………………………………….(REF + 5V) to (V- - 0.3V)
Output Voltage
REF.....................................................(V+ + 0.3V) to (V- - 0.3V)
OUT ....................................................(V+ + 0.3V) to (V- - 0.3V)
Input Current (IN+, IN-, HYST)...............................................20mA
Output Current
REF…………………………………………………………….20mA
OUT…………………………………………………………….40mA
Output Short-Circuit Duration (V+ ≤ 5.5V) ...................Continuous
Continuous Power Dissipation (T
A
= +70°C)
8-Pin MSOP (derate 4.1mW/°C above +70°C) ................330mW
Operating Temperature Ranges..............................-40°C to +85°C
Storage Temperature Range ................................-65°C to +150°C
Lead Temperature (soldering, 10s) .....................................+300°C
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
ORDER NUMBER
TS9002IM8TP
PART
CARRIER QUANTITY
MARKING
Tube
TADG
Tape
& Reel
50
2500
TS9002IM8T
Lead-free Program:
Touchstone Semiconductor supplies only lead-free packaging.
Consult Touchstone Semiconductor for products specified with wider operating temperature ranges.
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TS9002DS r1p0
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TS9002
ELECTRICAL CHARACTERISTICS – 5V OPERATION
V+ = 5V, V- = GND = 0V; T
A
= -40ºC to +85ºC, unless otherwise noted. Typical values are at T
A
= +25ºC. See Note 1.
PARAMETER
POWER REQUIREMENTS
Supply Voltage Range
Supply Current
COMPARATOR
Input Offset Voltage
Input Leakage Current (IN-, IN+)
Input Leakage Current (HYST)
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Output Voltage Noise
Hysteresis Input Voltage Range
Response Time
(High-to-Low Transition)
Response Time
(Low-to-High Transition)
Output High Voltage
Output Low Voltage
REFERENCE
Reference Voltage
Reference Line Regulation
Source Current
Sink Current
Output Voltage Noise
2.5V ≤ (V+ - V-) ≤ 11V
ΔVREF
= 1%
ΔVREF
= 1%
100Hz to 100kHz
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
1.173
1.164
20
6
10
4
1.182
0.25
25
15
100
1.191
1.199
V
mV/V
μA
μA
μV
RMS
V- to (V+ – 1.3V)
V+ = 2.5V to 11V
100Hz to 100kHz
REF- 0.05V
Overdrive = 10 mV
T
A
= +25°C, 100pF load
Overdrive = 100 mV
Overdrive = 10 mV
T
A
= +25°C, 100pF Load
Overdrive = 100 mV
-40°C to +85°C; I
OUT
= 17mA
-40°C to +85°C; I
OUT
= 1.8mA
Dual Supply
-40°C to +85°C; I
OUT
= 1.8mA
17
7
17
7
V+ – 0.4
GND + 0.4
V- + 0.4
V
CM
= 2.5V
IN+ = IN- = 2.5V
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
V-
0.1
0.1
20
±3.5
±10
±2
±5
mV
nA
nA
nA
nA
V
mV/V
mV/V
μV
RMS
V
μs
μs
V
V
V
CONDITIONS
MIN
2.5
IN+ = IN- + 100mV
HYST = REF
T
A
= +25°C
-40°C to +85°C
2.6
TYP
MAX
11
4
5.2
UNITS
V
µA
±0.01
±0.01
±0.02
±0.02
V+ – 1.3V
1
1
REF
TS9002DS r1p0
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RTFDS
TS9002
ELECTRICAL CHARACTERISTICS – 3V OPERATION
V+ = 3V, V- = GND = 0V; T
A
= -40ºC to +85ºC, unless otherwise noted. Typical values are at T
A
= +25ºC. See Note 1.
PARAMETER
POWER REQUIREMENTS
Supply Current
COMPARATOR
Input Offset Voltage
Input Leakage Current (IN-, IN+)
Input Leakage Current (at HYST Pin)
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Output Voltage Noise
Hysteresis Input Voltage Range
Response Time
(High-to-Low Transition)
Response Time
(Low-to-High Transition)
Output High Voltage
Output Low Voltage
REFERENCE
Reference Voltage
Reference Line Regulation
Source Current
Sink Current
2.5V ≤ (V+ - V-) ≤ 5V
ΔVREF
= 1%
ΔVREF
= 1%
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
1.173
1.164
20
6
10
4
1.182
0.25
25
15
1.191
1.199
V
mV/V
μA
μA
V- to (V+ – 1.3V)
V+ = 2.5V to 11V
100Hz to 100kHz
REF- 0.05V
Overdrive = 10 mV
T
A
= +25°C, 100pF load
Overdrive = 100 mV
Overdrive = 10 mV
T
A
= +25°C, 100pF Load
Overdrive = 100 mV
-40°C to +85°C; I
OUT
= 10mA
-40°C to +85°C; I
OUT
= 1.8mA
Dual Supply
-40°C to +85°C; I
OUT
= 1.8mA
17
7
17
7
V+ – 0.4
GND + 0.4
V- + 0.4
V
CM
= 1.5V
IN+ = IN- = 1.5V
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
T
A
= +25°C
-40°C to +85°C
V-
0.1
0.1
20
±3.5
±10
±2
±5
V+ – 1.3V
1
1
REF
mV
nA
nA
nA
nA
V
mV/V
mV/V
μV
RMS
V
μs
μs
V
V
V
CONDITIONS
IN+ = IN- + 100mV
HYST = REF
T
A
= +25°C
-40°C to +85°C
MIN
TYP
2
MAX
3.8
5.3
UNITS
µA
±0.01
±0.01
±0.02
±0.02
Output Voltage Noise
100Hz to 100kHz
100
μV
RMS
Note 1:
All specifications are 100% tested at T
A
= +25°C. Specification limits over temperature (T
A
= T
MIN
to T
MAX
) are guaranteed by device
characterization, not production tested.
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TS9002DS r1p0
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TS9002
TYPICAL PERFORMANCE CHARACTERISTICS
V
+
= 5V; V
-
= GND; T
A
= +25°C, unless otherwise noted.
Output Voltage Low
vs Load Current
2.5
V+ = 5V
2
4.5
4
1.5
V
OL
- V
V
OH
- V
V+ = 3V
1
3.5
3
2.5
0.5
2
0
0
4
8
12
16
20
24
28
LOAD CURRENT - mA
Reference Output Voltage vs
Output Load Current
1.190
V+ = 3V or 5V
1.185
REFERENCE VOLTAGE - V
REFERENCE VOLTAGE - V
1.180
1.175
1.170
1.165
1.160
1.155
0
5
10
15
20
25
30
SOURCE
SINK
1.21
1.20
1.19
1.18
1.17
1.16
1.15
1.14
-40
-15
10
35
60
85
1.22
1.5
0
10
20
30
40
50
LOAD CURRENT - mA
Reference Voltage vs Temperature
V+ = 3V
V+ = 5V
5
Output Voltage High vs
Load Current
LOAD CURRENT - µA
Supply Current vs Temperature
4.5
4
SUPPLY CURRENT - µA
40
V+ = 5V, V- = 0V
3
2.5
2
1.5
-40
-15
10
35
60
85
TEMPERATURE - ºC
V+ = 3V, V- = 0V
IN+ - IN- - mV
3.5
20
0
-20
-40
-60
-80
0
80
60
TEMPERATURE - ºC
Hysteresis Control
OUTPUT HIGH
NO CHANGE
OUTPUT LOW
10
20
30
40
50
V
REF
- V
HYST
- mV
TS9002DS r1p0
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RTFDS
Microchip MCU
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