SOT-23 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
TRANSISTOR
better reverse leakage current and thermal resistance.
(NPN)
•
Low profile surface mounted application in order to
WILLAS
FM120-M
8050SLT1
THRU
FM1200-M
PACKAGE
Pb Free Prod
Features
Package outline
SOD-123H
FEATURES
•
Low power loss, high efficiency.
•
package is available
Pb-Free
High current capability, low forward voltage drop.
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen
Ultra
product for
switching.
code suffix “H”
•
free
high-speed
packing
•
Silicon epitaxial planar chip, metal silicon junction.
Collector Current: I
C
=0.5A
environmental standards of
•
Lead-free parts meet
MIL-STD-19500 /228
optimize board space.
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
•
RoHS
MARKING: J3Y
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
•
Epoxy : UL94-V0 rated flame retardant
Parameter
•
Case : Molded plastic, SOD-123H
Collector-Base Voltage
V
CBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CEO
I
C
P
C
T
j
Collector-Emitter Voltage
Method 2026
Mechanical data
Value
0.031(0.8) Typ.
Unit
V
V
A
W
℃
℃
40
25
0.5
0.3
150
-55-150
0.031(0.8) Typ.
V
EBO
Emitter-Base
by cathode
•
Polarity : Indicated
Voltage
band
Collector Current
•
Mounting Position : Any
-Continuous
•
Weight : Approximated 0.011 gram
Collector Dissipation
Junction Temperature
5
V
Dimensions in inches and (millimeters)
Storage Temperature
T
stg
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless
For capacitive load, derate current by 20%
Marking
Parameter
Code
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
otherwise specified)
Test conditions
12
13
14
20
30
40
28
40
20
30
15
Min
16
50
60
35
40
50
60
1.0
30
40
120
Symbol
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Typ
18
Collector-base breakdown voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
V
(BR)CBO
V
RMS
V
DC
V
RRM
I
C
14
100
μ
A, I
E
=0
=
21
80
56
80
Max
10
100
70
100
Unit
115
V
105
V
150
150
120
200
140
200
42
Collector-emitter breakdown voltage
I
O
V
(BR)EBO
Emitter-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
I
C
=1mA, I
B
V
(BR)CEO
= 0
I
E
=100
μ
A, I
C
=0
V
CB
=40 V ,
I
E
0
=
25
5
V
Collector cut-off current
(Note 2)
Typical Thermal Resistance
Collector cut-off current
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
I
CBO
ΘJA
R
I
CEO
T
J
I
EBO
V
H
FE(1)
F
@T A=125℃
H
FE(2)
C
J
0.1
μ
A
-55
I
=
+125
V
CB
= 20V ,
to
E
0
-
65
to +175
-55
0.1
+150
μ
A
to
TSTG
Emitter cut-off current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
DC current gain
Rated DC Blocking Voltage
= 0
V
EB
= 5V , I
C
0.50
V
CE
= 1V, I
C
= 50mA
0.70
120
0.1
0.85
350
μ
A
0.9
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
0.92
I
R
0.5
10
V
CE
= 1V, I
C
= 500mA
I=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
= 6V, I
C
= 20mA
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
V
CE(sat)
V
BE(sat)
f
T
0.6
1.2
150
V
V
MHz
Transition frequency
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
2012-06
120-200
WILLAS ELECTRONIC CO
200-350
2012-
0
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
Typical Characterisitics
100
WILLAS
Static Characteristic
FM120-M
8050SLT1
THRU
FM1200-M
C
SOD-123
1000
PACKAGE
FE
Pb Free Produ
COMMON EMITTER
V
CE
=1V
better reverse leakage current and thermal resistance.
400uA
EMITTER
mounted application
T
a
=25
℃
in order to
•
Low profile surface
350uA
80
optimize board space.
300uA
•
Low power loss, high efficiency.
60
forward voltage drop.
•
High current capability, low
250uA
•
High surge capability.
200uA
•
Guardring for overvoltage protection.
40
150uA
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
100uA
20
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
I
B
=50uA
•
0
RoHS product for packing code suffix "G"
0
4
12
16
Halogen free product
8
for packing code suffix "H"
20
COLLECTOR-EMITTER
Mechanical data
VOLTAGE
V
CE
(V)
•
Batch process design, excellent power dissipation offers
COMMON
h
FE
Features
Package
h
outline
—— I
SOD-123H
T
a
=100
℃
I
C
(mA)
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
10
1
3
10
30
100
500
COLLECTOR CURRENT
I
C
(mA)
0.040(1.0)
0.024(0.6)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
rated
—— I
C
•
Epoxy : UL94-V0
V
CEsat
flame retardant
500
•
Case : Molded plastic, SOD-123H
,
300
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
1.2
V
BEsat
0.031(0.8) Typ.
——
I
C
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
100
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
T =100
℃
a
0.8
a
Dimensions in inches and (millimeters)
T =25
℃
T
a
=100
℃
0.4
30
T =25
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
a
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
β=10
For capacitive load, derate current by 20%
10
1
3
10
30
100
500
β=10
0.0
1
3
10
30
100
500
RATINGS
CURRENT
COLLECTOR
Marking Code
Maximum
(mA)
I
C
(mA)
FM150-MH
CURRENT I
C
(mA)
SYMBOL
FM120-M
H FM130-MH
FM140-MH
COLLECTOR
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
I
C
—— V
Maximum Recurrent Peak Reverse Voltage
BE
500
100
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
(pF)
13
30
100
21
30
30
14
40
28
40
C
ob
/ C
ib
15
50
35
50
——
16
60
42
V
CB
/ V
EB
18
80
56
80
10
100
T
a
=25
℃
100
f=1MHz
I
C
=0
I
E
=0/
70
115
150
105
150
120
200
140
200
COMMON EMITTER
RMS
=1V
V
CE
Voltage
C
60
ib
I
C
Maximum Average Forward Rectified Current
30
COLLECTOR CURRENT
a
Peak Forward Surge Current 8.3 ms single half sine-wave
CAPACITANCE
T
a
(JEDEC method)
superimposed on rated load
=100
℃
3
Typical Thermal Resistance (Note 2)
10
C
T =25
℃
10
C
ob
1.0
30
40
120
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage
0.3
Temperature Range
1
-55 to +150
3
-55 to +125
-
65
to +175
1
0.1
0.2
0.4
0.6
CHARACTERISTICS
0.8
0.1
1
10
0.3
20
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
3
FM180-MH FM1100-MH
FM1150-MH
FM1200-M
SYMBOL
1.0
BASE-EMMITER VOLTAGE
Maximum Forward Voltage at 1.0A DC
V
BE
(V)
V
F
I
R
V
CE
=6V
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
400
0.50
REVERSE VOLTAGE
0.70
V
(V)
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
f
T
—— I
C
1000
@T A=125℃
Rated DC Blocking Voltage
P
C
——
0.5
T
10
a
NOTES:
2- Thermal Resistance From Junction to Ambient
TRANSITION FREQUENCY
f
T
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(MHz)
100
200
100
2012-06
10
10
30
100
0
0
25
50
75
WILLAS ELECTRONIC CO
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-
0
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
THRU
8050SLT1
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
Outline Drawing
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
.106(2.70)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.063(1.60)
.047(1.20)
.122(3.10)
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.080(2.04)
Maximum DC Blocking Voltage
.070(1.78)
Maximum RMS Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
.008(0.20)
80
100
.003(0.08)
80
100
1.0
30
56
70
18
.083(2.10)
10
115
150
105
150
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
.004(0.10)MAX.
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
WILLAS ELECTRONIC COR
Rev.D
2012-
0
WILLAS ELECTRONIC CORP.
传感器
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