General
MOUNT SCHOTTKY
Transistors
-20V- 200V
1.0A SURFACE
Purpose
BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
8050HxLT1
THRU
FM1200-M
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
NPN Silicon
optimize board space.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FEATURE
•
High surge capability.
Guardring
capacity in compact package.
•
High current
for overvoltage protection.
I
C
=1.5A.
•
Ultra high-speed switching.
Silicon
planar type.
•
Epitaxial
epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
NPN complement: 8050H
•
MIL-STD-19500 /228
We declare that the material of product compliance with RoHS requirements.
RoHS product for packing code suffix "G"
Pb-Free package is available
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
COLLECTOR
3
0.040(1.0)
0.024(0.6)
Mechanical data
packing code suffix “H”
Halogen free product for
RoHS product for packing code suffix ”G”
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
DEVICE MARKING AND ORDERING INFORMATION
•
Case : Molded plastic, SOD-123H
,
Shipping
Device
Marking
•
Terminals :Plated terminals, solderable per MIL-STD-750
8050HPLT1
Method 2026
1HA
1
0.031(0.8) Typ.
BASE
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
8050HSLT1
1HG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
RATINGS
MAXIMUM
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Symbol
Rating
For capacitive load, derate current by 20%
Collector-Emitter Voltage
V
CEO
im
V
EBO
12
I
C
20
14
Collector-Base
RATINGS
Voltage
Marking
Emitter-Base Voltage
Code
Maximum RMS Voltage
25
V
40
V
SYMBOL
V
CBO
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
13
5
30
1500
21
30
14
40
28
40
Pr
el
ina
Max
Unit
V
15
50
mAdc
35
50
•
8050HQLT1
Polarity : Indicated by cathode band
1HC
Mounting Position : Any
•
8050HRLT1
1HE
•
Weight : Approximated 0.011 gram
2
EMITTER
Dimensions in inches and (millimeters)
Collector Current-continuoun
Maximum Recurrent Peak Reverse Voltage
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
THERMAL CHARACTERISTICS
Maximum DC Blocking Voltage
Characteristic
Maximum Average Forward Rectified Current
T
A
=25°C
superimposed on rated load (JEDEC method)
Derate above 25°C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Symbol
P
D
20
Max
225
Unit
mW
mW/°C
°C/W
Peak Forward Surge Current 8.3 ms single half sine-wave
Total Device Dissipation FR-5 Board,(1)
I
FSM
R
ΘJA
C
J
T
J
TSTG
R
θ
J A
P
D
Thermal Resistance,Junction to Ambient
556
-55 to +125
300
1.8
-55 to +150
-
65
to +175
Total Device Dissipation
Storage Temperature Range
Alumina Substrate,(2) TA=25°C
Maximum Forward Voltage at 1.0A DC
Maximum
Thermal Resistance,Junction
@T
Ambient
Average Reverse Current at
to
A=25℃
Rated DC Blocking Voltage
@T A=125℃
Derate above 25°C
CHARACTERISTICS
mW
mW/°C
0.70
°C/W
°C
0.85
0.5
10
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
2.4
0.50
R
θ
J A
T
j,
T
S
t
g
417
-55 to +150
Junction and Storage Temperature
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Characteristic
Symbol
•
Low power loss, high efficiency.
OFF CHARACTERISTICS
forward voltage drop.
•
High current capability, low
•
High surge capability.
Collector-Emitter Breakdown Voltage
•
Guardring for overvoltage protection.
V
(BR)CEO
•
Ultra high-speed switching.
(I
C
=1.0mA)
•
Silicon epitaxial planar chip, metal silicon junction.
Emitter-Base Breakdown Voltage
•
Lead-free parts meet environmental standards of
V
(BR)EBO
MIL-STD-19500 /228
(I
E
=100µΑ)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Collector-Base Breakdown Voltage
V
(BR)CBO
Mechanical data
(I
C
=100µΑ)
•
Epoxy : UL94-V0 rated flame retardant
Collector Cutoff Current (V
CB
=35V)
I
CBO
•
Case : Molded plastic, SOD-123H
Method 2026
General Purpose Transistors
Features
FM120-M
THRU
8050HxLT1
FM1200-M
Pb Free Product
Package outline
SOD-123H
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Min
Typ
Max
0.146(3.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
25
–
–
V
0.071(1.8)
0.056(1.4)
5
–
–
V
40
–
–
–
–
–
–
150
150
V
0.040(1.0)
0.024(0.6)
ry
,
0.031(0.8) Typ.
nA
nA
0.031(0.8) Typ.
I
EBO
Emitter Cutoff Current (V
EB
=4V)
•
Terminals :Plated terminals, solderable per MIL-STD-750
ina
Symbol
Min
Typ
100
-
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
20
•
Polarity : Indicated by cathode band
Characteristic
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
ON CHARACTERISTICS
DC Current Gain
MAXIMUM
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Dimensions in inches and (millimeters)
Max
Unit
RATINGS AND ELECTRICAL CHARACTERISTICS
im
Ratings at 25℃ ambient
CE
=1V
I
C
=100mA,V
temperature unless otherwise specified.
h
FE
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Emitter Saturation
For capacitive load, derate current by 20%
Voltage
(I
C
=800mA I
B
=80mA)
RATINGS
Marking Code
600
V
V
CE(S)
-
0.5
SYMBOL
FM120-M
H FM130-MH
-
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
V
RMS
V
DC
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Pr
el
V
NOTE :
*
P
Q
R
S
V
V
h
F E
Maximum Average Forward Rectified Current
100~200
superimposed on rated load (JEDEC method)
150~300
I
O
I
FSM
200~400
300~600
A
Peak Forward Surge Current 8.3 ms single half sine-wave
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS
General
MOUNT SCHOTTKY
Transistors
-20V- 200V
1.0A SURFACE
Purpose
BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
SOT-23
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
.122(3.10)
•
Silicon epitaxial planar chip, metal silicon junction.
.106(2.70)
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
8050HxLT1
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
.006(0.15)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.083(2.10)
.110(2.80)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
ry
13
30
21
30
14
40
15
50
35
50
16
60
42
60
1.0
30
40
120
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
RATINGS
.004(0.10)MAX.
Pr
el
12
20
14
im
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
20
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
.080(2.04)
.070(1.78)
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.020(0.50)
I
O
.012(0.30)
I
FSM
.055(1.40)
.035(0.89)
28
40
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
Dimensions in inches and (millimeters)
C
J
T
J
TSTG
-55 to +150
-55 to +125
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.037
0.95
0.037
0.95
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.9
0.92
V
F
0.50
0.70
0.85
I
R
0.5
10
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
京公网安备 11010802033920号
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