TBB1005
Twin Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-989F (Z)
Preliminary 7th. Edition
Dec. 2000
Features
•
Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
•
Suitable for World Standard Tuner RF amplifier.
•
Very useful for total tuner cost reduction.
•
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
•
Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
6
5
4
2
1
3
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Notes:
1.
2.
Marking is “EM”.
TBB1005 is individual type number of HITACHI TWIN BBFET.
TBB1005
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
*3
Tch
Tstg
Ratings
6
+6
-0
+6
-0
30
250
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Notes: 3. Value on the glass epoxy board (49mm
×
38mm
×
1mm).
Electrical Characteristics
(Ta = 25°C)
The below specification are applicable for UHF unit (FET1)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
Min
6
+6
+6
—
—
0.5
0.5
13
21
1.4
1.0
—
16
Typ
—
—
—
—
—
0.75
0.75
17
26
1.8
1.4
0.02
21
Max
—
—
—
+100
+100
1.0
1.0
21
31
2.2
1.8
0.04
—
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
Test Conditions
I
D
= 200µA, V
G1S
= V
G2S
= 0
I
G1
= +10µA, V
G2S
= V
DS
= 0
I
G2
= +10µA, V
G1S
= V
DS
= 0
V
G1S
= +5V, V
G2S
= V
DS
= 0
V
G2S
= +5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V, I
D
= 100µA
V
DS
= 5V, V
G1S
= 5V, I
D
= 100µA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 100kΩ
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 100kΩ, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 100kΩ
f = 1MHz
V
DS
= V
G1
= 5V, V
G2S
= 4V
R
G
= 100kΩ, f = 900MHz
Zi=S11*, Zo=S22*(:PG)
Zi=S11opt (:NF)
Gate1 to source cutoff current I
G1SS
Gate2 to source cutoff current I
G2SS
Gate1 to source cutoff voltage V
G1S(off)
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
I
D(op)
|y
fs
|
c
iss
c
oss
c
rss
PG
Noise figure
NF
—
1.7
2.5
dB
2
TBB1005
Electrical Characteristics
(Ta = 25°C)
The below specification are applicable for VHF unit (FET2)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
Min
6
+6
+6
—
—
0.5
0.5
14
20
2.2
1.2
—
22
—
Typ
—
—
—
—
—
0.75
0.75
18
25
2.6
1.6
0.03
27
1.2
Max
—
—
—
+100
+100
1.0
1.0
22
30
3.0
2.0
0.05
—
1.7
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test Conditions
I
D
= 200µA, V
G1S
= V
G2S
= 0
I
G1
= +10µA, V
G2S
= V
DS
= 0
I
G2
= +10µA, V
G1S
= V
DS
= 0
V
G1S
= +5V, V
G2S
= V
DS
= 0
V
G2S
= +5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V, I
D
= 100µA
V
DS
= 5V, V
G1S
= 5V, I
D
= 100µA
V
DS
= 5V, V
G1
= 5V, V
G2S
= 4V,
R
G
= 82kΩ
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V,
R
G
= 82kΩ, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 82kΩ
f = 1MHz
V
DS
= V
G1
= 5V, V
G2S
= 4V
R
G
= 82kΩ, f = 200MHz
Gate1 to source cutoff current I
G1SS
Gate2 to source cutoff current I
G2SS
Gate1 to source cutoff voltage V
G1S(off)
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
I
D(op)
|y
fs
|
c
iss
c
oss
c
rss
PG
NF
3
TBB1005
Test Circuits
•
DC Biasing Circuit for Operating Characteristic Items
(I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
Measurment of FET1
Gate 1
Gate 2
Open
V
G2
V
G1
R
G
I
D
V
D
A
Drain
Source
Open
Measurment of FET2
Gate 2
V
G2
Open
V
G1
Gate 1
R
G
A
Open
Source
Drain
I
D
V
D
4
TBB1005
•
Equivalent Circuit
No.1
Drain(1)
No.6
Gate-1(1)
No.2
Source
BBFET-(1)
BBFET-(2)
No.3
Drain(2)
No.5
Gate-2
No.4
Gate-1(2)
•
200 MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input(50Ω)
L1
1000p
36p
1000p
47k
TWINBBFET
L2
1000p
47k
Output(50Ω)
10p max
1000p
1SV70
R
G
82k
RFC
1SV70
1000p
V
D
= V
G1
Unit : Resistance (Ω)
Capacitance (F)
L1 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
φ1mm
Enameled Copper Wire,Inside dia 5mm, 2Turns
5
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