WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
P-Channel Enhancement Mode Field Effect Transistor
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
General
•
Description
for packing code suffix "G"
RoHS product
Halogen free product for packing
technology
The
SE3407
uses advanced trench
code suffix "H"
to provide
FM120-M
SE3407
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-23
excellent
low gate charge. This
R
DS(on)
with
Mechanical data
device is suitable for use as a load
•
Epoxy : UL94-V0 rated flame retardant
switch or in PWM applications.
•
Case : Molded plastic, SOD-123H
,
Pb-Free package is
:Plated terminals, solderable per MIL-STD-750
•
Terminals
available
Method 2026
RoHS product for packing code suffix ”G”
•
Polarity : Indicated by cathode
suffix
Halogen free product for packing code
band
“H”
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
1. GATE
2. SOURCE
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3. DRAIN
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
MARKING: 3407
Maximum RMS Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum ratings
load
=25℃
method)
otherwise noted)
superimposed on rated
(T
a
(JEDEC
unless
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Parameter
Operating Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
R
ΘJA
C
J
T
J
TSTG
Symbol
V
DS
V
GS
I
D
Drain-Source Voltage
Storage Temperature Range
-55 to +125
Value
-30
±20
-4.1
350
357
150
-55~+150
40
120
-55 to +150
Unit
-
65
to +175
V
Gate-Source Voltage
Continuous Drain Current
CHARACTERISTICS
V
0.85
0.5
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Power Dissipation
Reverse Current at @T A=25℃
Maximum Average
Thermal Resistance from Junction to Ambient
@T A=125℃
Rated DC Blocking Voltage
Junction Temperature
Maximum Forward Voltage at 1.0A DC
V
F
I
R
P
D
R
θJA
T
J
T
stg
0.50
0.70
A
mW
℃/W
℃
℃
0.9
0.92
Storage Temperature
applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and
NOTES:
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Electrical characteristics (T
a
=25℃ unless otherwise noted)
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Test Condition
Parameter
Symbol
•
High surge capability.
Static characteristics
overvoltage protection.
•
Guardring for
•
Ultra high-speed switching.
Drain-source breakdown voltage
BV
DSS
V
GS
= 0V, I
D
=-250µA
•
Silicon epitaxial planar chip, metal silicon junction.
Zero gate
•
voltage drain current
environmental standards
=-24V,V
GS
= 0V
I
DSS
V
DS
of
Lead-free parts meet
MIL-STD-19500 /228
Gate-source leakage current
I
GSS
V
GS
=±20V, V
DS
= 0V
•
RoHS product for packing code suffix "G"
V
Halogen free product for packing code suffix "H"
GS
=-10V, I
D
= -4.1A
FM120-M
SE3407
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
Min
-30
Typ
0.146(3.7)
0.130(3.3)
Max
Units
V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
-1
±100
60
87
5.5
0.031(0.8) Typ.
µA
nA
mΩ
0.040(1.0)
0.024(0.6)
Drain-source on-resistance (note 1)
Mechanical data
Forward tranconductance (note 1)
R
DS(on)
V
GS
=-4.5V, I
D
= -3A
-1
mΩ
S
V
•
Epoxy : UL94-V0 rated flame retardant
g
FS
V
DS
=-5V, I
D
=-4A
•
Case : Molded plastic, SOD-123H
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Diode forward voltage
Method 2026
(note 1)
V
SD
C
iss
C
oss
I
S
=-1A,V
GS
=0V
Polarity : Indicated by cathode band
Dynamic
•
characteristics
(note 2)
-3
-1
700
0.031(0.8) Typ.
V
pF
pF
pF
ns
10
ns
100
70
100
115
150
105
150
120
200
140
200
Dimensions in inches and (millimeters)
•
Mounting
Input capacitance
Position : Any
Output capacitance
•
Weight : Approximated 0.011 gram
V
DS
=-15V,V
GS
=0V,f =1MHz
120
75
8.6
Reverse transfer capacitance
RATINGS AND ELECTRICAL CHARACTERISTICS
C
rss
MAXIMUM
Ratings
Characteristics
(note 2)
Switching
at 25℃ ambient temperature unless otherwise specified.
Turn-on delay time
Turn-on rise time
Single phase half wave, 60Hz, resistive of inductive load.
t
d(on)
For capacitive load, derate current by 20%
RATINGS
t
r
t
d(off)
t
f
5.0
ns
V
GS
=-10V,V
DS
=-15V,
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
R
L
=3.6Ω,R
GEN
=3Ω
12
13
V
RRM
V
RMS
V
DC
I
FSM
R
ΘJA
C
J
T
J
TSTG
Marking Code
Turn-off delay time
Turn-off fall time
Maximum Recurrent Peak Reverse Voltage
20
14
30
21
14
40
28
40
15
50
35
50
16
28.2
18
60
80
42
60
1.0
30
Notes:
Maximum DC Blocking Voltage
2.
Maximum RMS Voltage
13.5
56
80
ns
1.
Maximum
test: Pulse width
≤300µs,
duty cycle
≤2%.
O
Pulse
Average Forward Rectified Current
I
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
20
30
These parameters have no way to verify.
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
Output Characteristics
-5
WILLAS
FM120-M
SE3407
THRU
FM1200-M
Features
Typical Characteristics
Package outline
Transfer Characteristics
SOD-123H
-4
0.146(3.7)
0.130(3.3)
Pb Free Produ
-25
-20
-15
-10
better reverse leakage current and thermal resistance.
•
Low
V
GS
=-10V
profile surface mounted application in order to
V
GS
=-4.5V
optimize board space.
-8V
-5V
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
V
GS
=-4V
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
V
GS
=-3.5V
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ta=25
℃
0.012(0.3) Typ.
(A)
(A)
-3
I
D
I
D
DRAIN CURRENT
DRAIN CURRENT
0.071(1.8)
0.056(1.4)
-2
-5
Mechanical data
-0
-1
0.040(1.0)
0.024(0.6)
-0
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
-1
-2
-3
-4
-5
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
DRAIN TO SOURCE VOLTAGE V
(V)
DS
-0
-0
0.031(0.8) Typ.
-1
-2
-3
0.031(0.8) Typ.
-4
GATE TO SOURCE VOLTAGE
V
GS
(V)
Method 2026
100
•
Polarity : Indicated by cathode band
R
DS(ON)
——
•
Mounting Position : Any
I
D
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
R
DS(ON)
—— V
GS
140
Ta=25
℃
Ta=25
℃
120
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
80
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive
V
of
=-4.5V
GS
inductive load.
For capacitive load, derate current by 20%
60
(m
Ω
)
(m
Ω
)
ON-RESISTANCE
R
DS(ON)
100
R
DS(ON)
RATINGS
V
GS
=-10V
ON-RESISTANCE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
80
Marking Code
Maximum Recurrent Peak Reverse Voltage
40
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
40
60
14
40
28
40
15
16
I
D
=-4.3A
50
60
35
50
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
20
-0
-2
-4
-6
superimposed on rated load (JEDEC method)
-8
-8
-10
-10
20
-2
-4
-6
Typical Thermal Resistance (Note 2)
Operating Temperature Range
I ——
Storage Temperature Range
S
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Typical Junction Capacitance (Note 1)
-55 to +125
-55 to +150
V
SD
-
65
to +175
-10
Ta=25
℃
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
-1
Maximum Forward Voltage at 1.0A DC
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
SOURCE CURRENT
I
S
(A)
Rated DC Blocking Voltage
-0.1
I
R
NOTES:
1-
-0.01
Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-1E-3
-1E-4
-1E-5
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
2012-06
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
SE3407
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
Outline Drawing
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
•
Case : Molded plastic, SOD-123H
Mechanical data
Method 2026
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
SOD-123H
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
,
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
10
.008(0.20)
80
100
.083(2.10)
115
150
105
150
.110(2.80)
120
200
140
200
56
70
.003(0.08)
80
100
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
.004(0.10)MAX.
CHARACTERISTICS
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
WILLAS ELECTRONIC COR
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
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