WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
N-Channel 20-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
APPLICATIONS
parts meet environmental standards of
•
Lead-free
MIL-STD-19500
DC/DC Converters
/228
•
RoHS product for packing code suffix "G"
Load
Halogen free product for packing code suffix "H"
Switching for Portable Applications
FM120-M
SE2312
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
Pb-Free package is available
Mechanical data
•
Epoxy : UL94-V0 rated flame
code
RoHS product for packing
retardant
suffix ”G”
•
Case Molded plastic,
Halogen
:
free product
SOD-123H
for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MARKING:
S12
Marking Code
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
I
O
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum DC
20
V
DC
Maximum
Blocking Voltage
ratings (T
a
=25℃ unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
Drain-Source Voltage
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
t=5s
TSTG
Symbol
V
DS
V
GS
I
D
Unit
Typical Thermal Resistance (Note 2)
20
±8.0
5
20
0.50
Gate-Source Voltage
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Continuous Drain Current
-55 to +125
40
120
-55 to +150
V
-
65
to +175
Pulsed Drain Current
Storage Temperature Range
I
DM
A
0.85
Continuous Source-Drain Diode Current
CHARACTERISTICS
Maximum
Maximum
Forward Voltage at 1.0A DC
Power Dissipation
Rated DC Blocking Voltage
I
S
1.04
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
t=5s
I
R
Thermal Resistance from Junction to Ambient
@T A=125℃
Maximum Average Reverse Current at @T A=25℃
P
D
R
θJA
T
J
T
stg
0.70
0.35
357
150
0.5
10
W
0.9
℃/W
℃
0.92
Junction Temperature
Storage Temperature
applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and
NOTES:
-50 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Electrical characteristics (T
a
=25℃ unless otherwise noted)
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
Parameter
Symbol
•
Silicon epitaxial planar chip, metal silicon junction.
Test Condition
Static
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Drain-source breakdown
packing code suffix
V
(BR) DSS
V
GS
= 0V, I
D
=250µA
"G"
•
RoHS product for
voltage
Halogen free product for packing code suffix "H"
FM120-M
SE2312
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Typ
Max
0.071(1.8)
0.056(1.4)
Unit
20
±100
1.0
0.45
0.031(0.8) Typ.
V
nA
0.040(1.0)
0.024(0.6)
Gate-source leakage
Mechanical data
I
GSS
I
V
DS
=0V, V
GS
=±8V
Zero gate voltage drain current
DSS
•
Epoxy : UL94-V0 rated flame retardant
Gate-source threshold voltage
SOD-123H
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
•
Case : Molded plastic,
V
GS
=4.5V,
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
I
D
=5.0A
V
DS
=20V, V
GS
=0V
µA
V
1.0
0.0318
0.0356
0.031(0.8) Typ.
Method 2026
Drain-source on-state resistance
a
R
DS(on)
V
GS
=2.5V, I
D
=4.7A
V
GS
=1.8V, I
D
=4.3A
V
DS
=10V, I
D
=5.0A
6
Ω
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Forward tranconductance
a
g
fS
•
Weight : Approximated 0.011 gram
Dynamic
b
Dimensions in inches and (millimeters)
0.0414
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Input capacitance
C
iss
Ratings at 25℃ ambient temperature unless otherwise specified.
V
DS
=10V,V
GS
=0V,f =1MHz
C
oss
Single phase half wave, 60Hz, resistive of inductive load.
Reverse transfer capacitance
by 20%
C
rss
For capacitive load, derate current
865
105
55
pF
Output capacitance
Gate resistance
Turn-on delay Time
Marking Code
RATINGS
R
g
SYMBOL
t
d(on)
V
RRM
FM160-MH FM180-MH
4.8
FM1100-MH FM1150-MH FM1200-MH
FM120-M
H FM130-MH
FM140-MH FM150-MH
0.5
f =1MHz
Ω
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
14
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
10
100
115
150
120
200
140
200
Rise time
Maximum RMS Voltage
Maximum DC Blocking
Turn-off Delay time
Voltage
t
r
V
RMS
V
GEN
14
=5V,V
DD
=10V,
28
21
t
d(off)
V
DC
I
D
=4A,R
G
=1Ω, R
L
=2.2Ω
20
30
40
t
f
I
O
I
FSM
R
ΘJA
C
J
TSTG
20
70
32
100
12
ns
105
150
Maximum
Fall yime
Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
Drain-source body diode characteristics
V
Forward diode voltage
Notes :
Junction Capacitance (Note 1)
Typical
b.
Storage Temperature Range
These parameters have no way to verify.
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
V
SD
V
GS
=0V,I
S
=4A
-55 to +125
40
120
0.75
1.2
-55 to +150
T
J
a.
Operating Temperature Range
≤300µs,
duty cycle
≤2%.
Pulse Test : pulse width
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
•
Batch process design, excellent power dissipation offers
FM120-M
SE2312
THRU
FM1200-M
Features
Package outline
Typical Characteristics
10
SOD-123
PACKAGE
Pb Free Produc
Output Characteristics
better reverse leakage current and thermal resistance.
order
•
Low profile surface mounted application in
Ta=25
o
C
to
V
GS
=2 thru 4.5
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
12
•
High surge capability.
•
Guardring for overvoltage protection.
V
GS
=1.5V
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
8
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
4
16
Transfer Characteristics
SOD-123H
8
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(A)
I
D
I
D
6
(A)
DRAIN CURRENT
DRAIN CURRENT
0.071(1.8)
0.056(1.4)
4
Mechanical data
2
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
V =1V
•
Case : Molded plastic, SOD-123H
0
,
0
1
2
3
4
5
•
Terminals :Plated terminals, solderable per MIL-STD-750
GS
0
0.4
0.031(0.8) Typ.
0.6
0.8
1.0
1.2
1.4
0.031(0.8) Typ.
1.6
1.8
Ta=25 C
o
DRAIN TO SOURCE VOLTAGE
Method 2026
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
•
Polarity : Indicated by cathode band
•
Mounting Position
I
: Any
—— V
SD
S
20
Weight : Approximated 0.011 gram
•
10
Dimensions in inches and (millimeters)
R
DS(ON)
——
100
V
GS
Ta=25 C
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
1
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
I
S
(A)
SOURCE CURRENT
(mΩ)
ON-RESISTANCE
R
DS(ON)
80
RATINGS
60
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.1
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
0.01
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
o
Ta=25 C
I
FSM
1.0
12
20
14
20
13
30
21
30
20
40
14
40
28
40
15
50
35
50
I
D
=3.0A
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
0.0
0.2
0.4
0.6
superimposed on rated load (JEDEC method)
1E-3
0.8
6
8
1.2
0
2
4
SOURCE TO DRAIN
Typical Thermal Resistance (Note 2)
VOLTAGE V
SD
(V)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
C
J
T
J
-55 to +125
GATE TO SOURCE VOLTAGE
40
V
120
GS
(V)
-
65
to +175
-55 to +150
R
Storage Temperature Range
DS(ON)
60
——
I
D
TSTG
Ta=25 C
o
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
(mΩ)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
50
NOTES:
40
ON-RESISTANCE
R
DS(ON)
Rated DC Blocking Voltage
V
GS
=1.8V
I
R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
30
V
GS
=2.5V
20
V
GS
=4.5V
10
2012-06
0
2
4
6
8
10
12
14
16
DRAIN CURRENT
I
D
(A)
WILLAS ELECTRONIC CORP
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
SE2312
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
Method 2026
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
0.040(1.0)
0.024(0.6)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
.008(0.20)
115
10
100
150
105
150
100
.083(2.10)
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
70
.003(0.08)
120
200
140
200
Vo
Vo
80
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
P
-
65
to +175
℃
.004(0.10)MAX.
CHARACTERISTICS
@T A=125℃
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
I
R
0.50
0.70
0.85
0.5
10
0.9
0.92
Vo
.055(1.40)
.035(0.89)
mA
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP.
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
51单片机
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