WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
N-Channel
optimize board space.
30-V(D-S) MOSFET
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
FEATURE
High surge capability.
•
Guardring for overvoltage protection.
TrenchFET
high-speed switching.
•
Ultra
Power MOSFET
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
PACKAGE
SE2304
THRU
FM1200-M
Pb Free Produ
Features
Package outline
SOD-123H
0.130(3.3)
SOT-23
0.146(3.7)
0.012(0.3) Typ.
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
Mechanical data
APPLICATIONS
Epoxy
Load
•
Switch
: UL94-V0 rated
Devices
for Portable
flame retardant
•
Case : Molded plastic, SOD-123H
DC/DC Converter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Pb-Free package is
2026
available
Method
RoHS
Polarity : Indicated by cathode band
•
product for packing code suffix ”G”
•
Mounting
product for
Halogen free
Position : Any
packing code suffix “H”
•
Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
MARKING: S4
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
Value
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum
Average Forward
=25℃ unless otherwise noted)
ratings (T
a
Rectified Current
Maximum
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Parameter
I
FSM
R
ΘJA
C
J
T
J
TSTG
Unit
Symbol
V
DS
V
GS
I
D
I
DM
Drain-Source Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Gate-Source Voltage
-55 to +125
30
±20
3.3
15
0.50
0.70
40
120
V
Continuous Drain Current
Operating Temperature Range
Storage Temperature Range
-
65
to +175
-55 to +150
Pulsed Drain Current
CHARACTERISTICS
Continuous Source-Drain Diode Current
A
0.85
0.9
0.92
Maximum Power Dissipation
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
I
S
0.9
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
P
D
R
θJA
T
J
T
STG
0.35
357
150
0.5
10
W
℃/W
℃
Thermal Resistance from Junction to Ambient (t≤5s)
@T A=125℃
Rated DC Blocking Voltage
Storage Temperature
NOTES:
Junction Temperature
applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ and
-55 ~+150
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
characteristics
efficiency.
Electrical
Low power loss, high
(T
a
=25℃ unless otherwise noted)
•
High current capability, low forward voltage drop.
surge capability.
•
High
Parameter
Symbol
Test condition
•
Guardring for overvoltage protection.
Static
•
Ultra high-speed switching.
silicon
•
Silicon epitaxial planar
Drain-source breakdown voltage
chip, metal
V
(BR)DSS
junction.
0V, I
D
=250µA
V
GS
=
•
Lead-free parts meet environmental standards of
Gate-source threshold voltage
V
GS
(
th)
V
DS
=V
GS
, I
D
=250µA
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Gate-body leakage
I
GSS
V
DS
=0V, V
GS
=±20V
Halogen free product for packing code suffix "H"
FM120-M
SE2304
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Typ
Max
Units
0.071(1.8)
0.056(1.4)
30
1.2
2.2
±100
1
0.049
0.031(0.8) Typ.
V
nA
µA
0.040(1.0)
0.024(0.6)
Zero gate voltage drain current
Mechanical data
Drain-source on-state resistance
a
I
DSS
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.2A
•
Epoxy : UL94-V0 rated flame retardant
R
DS(on)
•
Case : Molded plastic, SOD-123H
V
GS
=4.5V, I
D
=2.8A
,
Forward
•
Terminals :Plated
a
terminals, solderable per MIL-STD-750
I
D
=2.5A
transconductance
g
fs
V
DS
=4.5V,
Dynamic
b
Method 2026
0.060
0.075
0.061
2.5
Ω
S
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Total gate charge
Q
g
•
Weight : Approximated 0.011 gram
Gate-source charge
Q
gs
Dimensions in inches and (millimeters)
V
DS
=15V,V
GS
=10V,I
D
=3.4A
4.5
2.1
6.7
3.2
nC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.8
V
DS
=15V,V
GS
=4.5V,I
D
=3.4A
0.85
0.65
4.4
235
8.8
Ω
Gate-drain charge
Q
gd
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half
Gate resistance
wave, 60Hz, resistive of inductive load.
f =1.0MHz
R
g
For capacitive load,
Input capacitance
derate current by 20%
RATINGS
C
iss
C
oss
V
DS
=15V,V
GS
=0V,f =1MHz
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
Output capacitance
Marking Code
Maximum RMS Voltage
Turn-on delay Time
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
45
Reverse transfer capacitance
Voltage
Maximum Recurrent Peak Reverse
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
C
rss
V
RRM
t
d(on)
V
RMS
t
r
17
12
1.0
12
30
22
40
5
120
12
18
80
56
20
80
10
100
70
100
pF
115
150
105
150
120
200
140
200
Rise time
20
V
DC
V
DD
=15V,
Turn-off delay time
Fall time
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
t
d(off)
I
O
R
L
=5.6Ω,
I
D
≈2.7A,
50
75
20
35
t
f
I
FSM
C
J
V
GEN
=4.5V,Rg=1Ω
ns
Turn-on
Thermal
time
Typical
delay
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Rise time
t
d(on)
R
ΘJA
t
r
t
d(off)
t
f
V
DD
=15V,
10
20
15
Turn-off delay time
Operating Temperature Range
Storage Temperature Range
-55 to +125
T
J
R
L
=5.6Ω,
I
D
≈2.7A,
Fall time
Drain-source body diode characteristics
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
TSTG
V
GEN
=10V,Rg=1Ω
10
-
65
to +175
5
-55 to +150
10
0.85
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
I
R
0.50
0.70
0.5
10
Continuous source-drain diode current
A=25℃
I
S
Maximum Average Reverse Current at @T
Rated DC Blocking Voltage
Pulse diode forward current
T
C
=25℃
1.4
15
1.2
A
A
V
@T A=125℃
I
SM
Body diode voltage
NOTES:
2- Thermal Resistance From Junction to Ambient
V
SD
I
S
=-2.7A,V
GS
=0V
0.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Notes :
a. Pulse Test : Pulse width≤300µs, duty cycle
≤2%.
b. Guaranteed by design, not subject to production testing.
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
•
Batch process design, excellent power dissipation offers
20
FM120-M
SE2304
THRU
FM1200-M
Features
Package outline
Typical Characteristics
5
SOD-123
PACKAGE
Pb Free Produ
(A)
15
10
DRAIN CURRENT
better reverse leakage current and thermal resistance.
Output Characteristics
•
Low profile surface mounted application in order to
V =10V,9V,8V,7V,6V,5V
T
a
=25
℃
optimize
GS
board space.
Pulsed
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
V
GS
=4V
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
V
GS
suffix
Halogen free product for packing code
=3V
"H"
Transfer Characteristics
SOD-123H
T
a
=25
℃
Pulsed
0.146(3.7)
0.130(3.3)
4
0.012(0.3) Typ.
I
D
(A)
3
DRAIN CURRENT
0.071(1.8)
0.056(1.4)
I
D
2
5
Mechanical data
GS
1
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
V =2V
0
,
0
•
Terminals :Plated terminals, solderable
10
2
4
6
8
12
per MIL-STD-750
DRAIN TO SOURCE VOLTAGE
0.040(1.0)
0.024(0.6)
0
0.031(0.8) Typ.
0.031(0.8) Typ.
0
Method 2026
V
DS
(V)
GATE TO SOURCE VOLTAGE
1
2
V
GS
3
(V)
4
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
R
DS(ON)
—— I
D
150
•
Weight : Approximated 0.011 gram
T
a
=25
℃
Pulsed
Dimensions in inches and (millimeters)
R
DS(ON)
——
500
V
GS
T
a
=25
℃
Pulsed
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
400
R
DS(ON)
R
DS(ON)
120
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
(m
Ω
)
(m
Ω
)
300
90
RATINGS
ON-RESISTANCE
Maximum Recurrent Peak Reverse Voltage
60
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
I
O
I
FSM
16
20
30
V
GS
=10V
V
DC
14
20
ON-RESISTANCE
Marking Code
V
GS
=4.5V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
20
13
30
200
21
30
100
14
40
28
40
15
50
35
50
16
60
42
I
D
=2.5A
60
18
80
56
80
1.0
30
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
12
0
4
8
DRAIN CURRENT I
D
(A)
Typical Thermal Resistance (Note 2)
0
6
0
R
ΘJA
C
J
T
J
0
2
4
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
I
S
10
-55 to +125
GATE TO SOURCE
40
VOLTAGE
V
8
10
GS
120
(V)
-
65
to +175
-55 to +150
——
V
SD
TSTG
T
a
=25
℃
Pulsed
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
S
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
SOURCE CURRENT
(A)
1
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.1
0.01
0
800
2012-06
200
SOURCE
400
DRAIN
600
TO
VOLTAGE V
1E-3
1000
1200
SD
(mV)
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
PACKAGE
SE2304
THRU
FM1200-M
Pb Free Produ
Features
Package outline
Outline Drawing
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
Method 2026
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
0.040(1.0)
0.024(0.6)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
.008(0.20)
18
10
80
100
80
100
.083(2.10)
115
150
105
150
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.003(0.08)
56
70
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
.004(0.10)MAX.
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
I
R
WILLAS ELECTRONIC COR
Rev.D
2012-
0
WILLAS ELECTRONIC CORP.
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