WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
P-Channel 30-V(D-S)
overvoltage protection.
•
Guardring for
MOSFET
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
FEATURE
•
Lead-free parts meet environmental standards of
TrenchFET Power MOSFET
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
PACKAGE
SE2303
THRU
FM1200-M
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-23
APPLICATIONS
UL94-V0 rated flame retardant
•
Epoxy :
Load
Case : Molded plastic, SOD-123H
•
Switch for Portable Devices
DC/DC Converter
terminals, solderable per MIL-STD-750 ,
•
Terminals :Plated
Method 2026
Pb-Free package is available
•
Polarity : Indicated by cathode band
RoHS product for packing code suffix ”G”
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
•
Weight : Approximated 0.011 gram
Mechanical data
1. GATE
2. SOURCE
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3. DRAIN
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
MARKING: S3
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum ratings (T
a
=25℃ unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
TSTG
Unit
Drain-Source Voltage
Typical Junction Capacitance (Note 1)
Operating Temperature
Gate-Source Voltage
Range
Typical Thermal Resistance (Note 2)
Parameter
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
STG
Value
-30
±20
-1.9
0.50
0.70
0.35
-55 to +125
40
120
-
65
to +175
V
-55 to +150
A
Continuous Drain Current
Storage Temperature Range
Continuous Source-Drain Diode Current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A
Maximum Power Dissipation
DC
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
I
S
-0.83
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
0.85
0.5
10
W
℃/W
℃
0.9
0.92
I
Thermal Resistance from Junction to Ambient(t≤5s)
R
Junction Temperature
Storage Temperature
NOTES:
@T A=125℃
357
150
-50 ~+150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
Electrical characteristics (T
a
=25℃ unless otherwise noted)
Features
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Symbol
Test Condition
•
Low profile surface mounted application in order to
Static
optimize board space.
•
Low power loss, high efficiency.
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
=-250µA
•
High current capability, low forward voltage drop.
Gate-Source Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
•
High surge capability.
•
Guardring for overvoltage protection.
Gate-Source Leakage
I
V
DS
=0V, V
GS
=±20V
•
Ultra high-speed switching.
GSS
Zero Gate Voltage Drain Current
I
DSS
V
junction.
•
Silicon epitaxial planar chip, metal silicon
DS
=-30V, V
GS
=0V
•
Lead-free parts meet environmental standards of
V
GS
=-10V, I
D
= -1.9A
MIL-STD-19500 /228
Drain-Source On-State Resistance
a
R
DS(on)
•
RoHS product for packing code suffix "G"
V
GS
=-4.5V, I
D
= -1.4A
Halogen free product for packing code suffix "H"
a
FM120-M
SE2303
THRU
PACKAGE
FM1200-M
Pb Free Prod
Package outline
Min
-30
-1
Typ
SOD-123H
Max
0.146(3.7)
0.130(3.3)
Parameter
Units
-3
±100
-1
0.158
0.275
0.190
0.330
V
0.012(0.3) Typ.
nA
0.071(1.8)
µA
Ω
S
0.040(1.0)
0.024(0.6)
0.056(1.4)
Forward Transconductance
Mechanical
Dynamic
b
data
g
fs
V
DS
=-5V, I
D
=-1.9A
1
155
35
25
4
2
8
4
•
Epoxy : UL94-V0 rated flame retardant
Input Capacitance
: Molded plastic, SOD-123H
C
iss
•
Case
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
DS
=-15V,V
GS
=0V,f =1MHz
Output Capacitance
C
oss
Reverse Transfer Capacitance
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
pF
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Total Gate Charge
Q
g
•
Weight : Approximated 0.011 gram
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
C
rss
V
DS
=-15V,V
GS
=-10V,I
D
=-1.9A
V
DS
=-15V,V
GS
=-4.5V,I
D
=-1.9A
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.7
0.6
1
8.5
4
11
17
8
18
nC
Ratings at 25℃ ambient temperature unless otherwise specified.
Gate Resistance
half wave, 60Hz, resistive of
R
g
= 1MHz
f
Single phase
inductive load.
Turn-On Delay Time
load, derate current by 20%
t
d(on)
For capacitive
Ω
Rise Time
RATINGS
Turn-Off Delay
Recurrent Peak Reverse Voltage
t
d(off)
Maximum
Time
Fall Time
Maximum RMS Voltage
Maximum
Time
Turn-On Delay
DC Blocking Voltage
Marking Code
t
r
t
f
t
d(on)
t
r
t
f
V
DD
=-15V,
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
R
L
=10Ω,
I
D
=-1.5A,
13
12
20
V
RRM
V
GEN
=-10V,Rg=1Ω
30
V
RMS
V
DC
14
21
30
20
14
40
28
40
15
50
35
50
16
11
60
42
8
60
36
1.0
12
30
18
18
80
56
16
80
44
10
100
70
100
115
150
105
150
120
200
140
200
ns
Rise
Time
Fall Time
Maximum Average Forward Rectified Current
V
DD
=-15V,
I
O
R
L
=10Ω,
I
D
=-1.5A,
I
FSM
R
ΘJA
C
J
T
J
37
45
18
14
Peak Forward Surge
Turn-Off Delay Time
Current 8.3 ms single half sine-wave
t
d(off)
superimposed on rated load (JEDEC method)
V
GEN
=-4.5V,Rg=1Ω
Typical Thermal Resistance (Note 2)
Typical Junction
diode characteristics
Drain-source Body
Capacitance (Note 1)
Operating Temperature Range
Continuous Source-Drain Diode
Storage Temperature Range
-55 to +125
9
40
120
-55 to +150
-
65
to +175
-1.75
Current
I
S
I
SM
V
SD
TSTG
T
C
=25℃
A
V
0.9
CHARACTERISTICS
Pulse Diode Forward Current
a
Body Diode Voltage
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200
-10
Notes :
Rated DC Blocking Voltage
NOTES:
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
S
=-1.5A
I
R
V
F
0.50
0.70
-0.8
0.5
10
-1.2
0.85
0.92
a. Pulse Test : Pulse Width
≤300µs,
Duty Cycle
≤2%.
b. Guaranteed by
at 1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured
design, not subject to production testing.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CO
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Output Characteristics
-1.0
•
Low power loss, high efficiency.
-10V
-8.0V
-6.0V
T
a
=25
℃
•
Pulsed
High current capability, low forward voltage drop.
-4.5V
•
High surge capability.
-0.8
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
-4.0V
•
Silicon epitaxial planar chip, metal silicon junction.
-0.6
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
-3.5V
•
RoHS product for packing code suffix "G"
-0.4
Halogen free product for packing code suffix "H"
(A)
FM120-M
PACKAGE
SE2303
THRU
FM1200-M
Pb Free Prod
Features
Typical Characteristics
T
a
=25
℃
Pulsed
Package outline
SOD-123H
-20
Transfer Characteristics
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-16
(A)
0.071(1.8)
0.056(1.4)
I
D
DRAIN CURRENT
-12
-8
Mechanical data
-4
V
GS
=-3.0V
DRAIN CURRENT
I
D
-0
-0
-0.2
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
-0.0
-1
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-1
-2
-3
0.031(0.8) Typ.
Method 2026
V
DS
-2
-3
-4
-5
-0
300
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
R
DS(ON)
—— I
D
•
Weight : Approximated 0.011 gram
T
a
=25
℃
Pulsed
DRAIN TO SOURCE VOLTAGE
(V)
GATE TO SOURCE VOLTAGE
Dimensions in inches and (millimeters)
V
GS
(V)
500
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(m
Ω
)
ON-RESISTANCE
R
DS(ON)
(m
Ω
)
250
200
R
DS(ON)
Ratings at 25℃ ambient temperature unless otherwise specified.
400
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
V
GS
=-4.5V
300
ON-RESISTANCE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Marking Code
150
Maximum Recurrent Peak Reverse Voltage
V
GS
=-10V
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
200
20
14
20
100
13
30
21
30
14
40
I
D
=-1.9A
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
100
28
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
40
50
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
DRAIN CURRENT I
D
Typical Thermal Resistance (Note 2)
(A)
-0
-4
-8
-12
-16
-20
0
-0
-4
-8
-12
-16
-20
R
ΘJA
C
J
T
J
TSTG
GATE TO SOURCE VOLTAGE
Typical Junction Capacitance (Note 1)
Operating Temperature Range
I
S
—— V
SD
Storage Temperature Range
-10
-55 to +125
V
GS
40
(V)
120
-55 to +150
-
65
to +175
I
S
(A)
-3
T
a
=25
℃
Pulsed
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
-1
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
SOURCE CURRENT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-0.3
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
2012-06
WILLAS ELECTRONIC CO
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
FM120-M
PACKAGE
SE2303
THRU
FM1200-M
Pb Free Produ
Features
Package outline
Outline Drawing
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Mechanical data
Method 2026
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
0.040(1.0)
0.024(0.6)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
.008(0.20)
18
10
80
100
80
100
.083(2.10)
115
150
105
150
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.003(0.08)
56
70
1.0
30
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
.004(0.10)MAX.
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
.020(0.50)
2- Thermal Resistance From Junction to Ambient
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
NOTES:
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
I
R
WILLAS ELECTRONIC CO
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
工业自动化与控制
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