SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
N-Channel 20-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
FEATURE
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts
Power MOSFET
standards of
TrenchFET
meet environmental
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
SE2302
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Mechanical
APPLICATIONS
data
•
Epoxy : UL94-V0 rated flame retardant
Load Switch for Portable Devices
•
Case : Molded plastic, SOD-123H
DC/DC Converter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Pb-Free package is available
Method 2026
RoHS product for packing
•
Polarity : Indicated by cathode band
code suffix ”G”
Dimensions in inches and (millimeters)
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MARKING: S2
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vol
Vol
Vol
Am
a
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum ratings (T =25℃ unless otherwise noted)
R
ΘJA
C
J
T
J
TSTG
Unit
V
superimposed on rated load (JEDEC method)
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Symbol
V
to
-55
DS
+125
V
GS
I
D
I
S
Drain-Source Voltage
Value
40
20
120
-55 to +150
℃/W
PF
℃
Gate-Source
Range
Storage Temperature
Voltage
-
±8
to +175
65
℃
Continuous Drain Current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Continuous Source-Drain Current(Diode Conduction)
V
F
A
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.50
0.70
2.1
0.6
0.85
Power Dissipation
Maximum Average Reverse Current at @T A=25℃
I
R
Thermal Resistance
@T A=125℃
Rated DC Blocking Voltage
from Junction to Ambient
(t≤5s)
P
D
R
θJA
T
J
T
STG
0.35
0.5
357
10
150
-55 ~+150
W
0.9
0.92
Vol
℃/W
℃
mAm
NOTES:
Operating Junction
1- Measured at 1
Temperature
reverse voltage of 4.0 VDC.
Storage
MHZ and applied
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Electrical
surge capability.
•
High
characteristics (T
a
=25℃ unless otherwise noted)
•
Guardring for overvoltage protection.
Parameter
Symbol
Test Condition
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Static
•
Lead-free parts meet environmental standards of
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
=10µA
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
V
GS(th)
Gate-threshold voltage
V
DS
=V
GS
, I
D
=50µA
Halogen free product for packing code suffix "H"
FM120-M
SE2302
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Typ
Max
Units
0.071(1.8)
0.056(1.4)
20
0.65
0.95
1.2
±100
1
0.045
0.070
8
0.040(1.0)
0.024(0.6)
V
nA
µA
Gate-body leakage
Mechanical
data
I
GSS
V
DS
=0V, V
GS
=±8V
V
DS
=20V, V
GS
=0V
•
Epoxy : UL94-V0 rated flame
Zero gate voltage drain current
retardant
I
DSS
•
Case : Molded plastic, SOD-123H
V
GS
=4.5V, I
D
=3.6A
0.031(0.8) Typ.
,
Drain-source on-resistance
a
r
DS(on)
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
GS
=2.5V, I
D
=3.1A
Forward transconductance
a
Method 2026
0.060
0.031(0.8) Typ.
Ω
0.115
S
V
•
Polarity : Indicated by cathode band
Diode
Mounting
voltage
: Any
•
forward
Position
Dynamic
•
Weight : Approximated 0.011 gram
Total gate charge
g
fs
V
SD
V
DS
=5V, I
D
=3.6A
I
S
=0.94A,V
GS
=0V
Dimensions in inches and (millimeters)
0.76
1.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Q
g
4.0
0.65
1.5
300
16
60
42
60
1.0
30
40
120
18
80
80
56
80
10
nC
V
DS
Gate-source charge
Q
specified.
=10V,V
GS
=4.5V,I
D
=3.6A
Ratings at 25℃ ambient temperature unless otherwise
gs
Single phase half wave, 60Hz, resistive of inductive load.
Gate-drain charge
Q
gd
For capacitive load, derate current by 20%
b
Input capacitance
Marking Code
Output capacitance
b
RATINGS
b
C
iss
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
C
oss
V
DS
=10V,V
GS
=0V,f=1MHz
12
20
14
20
13
30
21
30
14
40
28
40
Reverse transfer capacitance
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Switching
b
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
C
rss
V
RRM
V
RMS
V
DC
t
r
I
O
15
50
35
50
120
10
100
70
100
115
150
105
150
pF
120
200
140
200
Volt
Volt
Turn-on delay time
Rise time
t
d(on)
FSM
t
I
d(off)
7
15
Volt
V
DD
=10V,
R
L
=5.5Ω,
I
D
≈3.6A,
V
GEN
=4.5V,Rg=6Ω
Amp
55
16
10
80
60
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
ns
Turn-off delay time
Amp
Fall time
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Notes :
Operating Temperature Range
Storage Temperature Range
t
f
R
ΘJA
C
J
T
J
TSTG
-55 to +125
25
℃/W
PF
a.
b.
Pulse Test : Pulse width≤300µs, duty cycle
≤2%.
CHARACTERISTICS
-
65
to +175
-55 to +150
℃
℃
These parameters have no way to verify.
V
F
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.50
0.70
0.5
10
0.85
0.9
0.92
Volt
I
R
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Output Characteristics
•
Guardring for overvoltage protection.
15
V
GS
=3.5V,3.0V,2.5V
T
a
=25
℃
•
Ultra high-speed switching.
Pulsed
•
Silicon epitaxial planar chip, metal silicon junction.
V
GS
=2.0V
•
Lead-free parts meet environmental standards of
12
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
9
Mechanical data
WILLAS
FM120-M
SE2302
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Typical Characteristics
10
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Transfer Characteristics
T
a
=25
℃
Pulsed
0.071(1.8)
0.056(1.4)
8
(A)
I
D
DRAIN CURRENT
6
0.040(1.0)
0.024(0.6)
DRAIN CURRENT
I
D
•
Epoxy : UL94-V0 rated flame retardant
•
6
Case : Molded plastic, SOD-123H
,
=1.5V
•
Terminals :Plated terminals, solderable per
V
MIL-STD-750
GS
(A)
4
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
0
Weight : Approximated 0.011 gram
0
2
4
6
DRAIN TO SOURCE VOLTAGE
V
DS
3
2
Dimensions in inches and (millimeters)
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
R
DS(ON)
—— I
D
100
For capacitive load, derate current by 20%
RATINGS
Marking Code
(m
Ω
)
T
a
=25
℃
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
——
0.20
V
GS
T
a
=25
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Pulsed
Pulsed
(
Ω
)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
R
DS(ON)
80
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
0.16
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
I
D
=4.5A
40
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
R
DS(ON)
Vo
Maximum DC Blocking Voltage
60
Maximum Average Forward Rectified Current
30
0.12
Vo
ON-RESISTANCE
V
GS
=2.5V
ON-RESISTANCE
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
40
superimposed on rated load (JEDEC method)
V
GS
=4.5V
0.08
Am
Typical Thermal Resistance (Note 2)
20
Typical Junction Capacitance (Note 1)
0.04
Operating Temperature Range
Storage Temperature Range
-55 to +125
0.00
120
-55 to +150
6
8
10
℃
P
-
65
to +175
2
4
℃
℃
0
CHARACTERISTICS
DRAIN CURRENT I
D
(A)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0
5
10
15
20
25
30
0
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
VOLTAGE V
GS
(V)
GATE TO SOURCE
FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
0.50
0.70
0.85
0.9
0.92
Vo
0.5
10
@T A=125℃
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
SE2302
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
.063(1.60)
.047(1.20)
.122(3.10)
Mechanical data
.106(2.70)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
.080(2.04)
Maximum Recurrent Peak Reverse Voltage
.070(1.78)
Maximum RMS Voltage
Marking Code
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.008(0.20)
10
100
70
100
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
.083(2.10)
115
150
105
150
120
200
140
200
.003(0.08)
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Volts
Volts
80
Volts
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage
.004(0.10)MAX.
Temperature Range
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
.055(1.40)
.035(0.89)
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
I
R
mAm
.020(0.50)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.012(0.30)
NOTES:
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-10
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Rev.D
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