JMnic
Product Specification
Silicon PNP Power Transistors
2SA1329
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC3346
・Low
collector saturation voltage
・High
speed switching time
APPLICATIONS
・High
current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-6
-12
-2
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-50mA ,I
B
=0
I
C
=-6A; I
B
=-0.3A
I
C
=-6A; I
B
=-0.3A
V
CB
=-80V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-6A ; V
CE
=-1V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1A ; V
CE
=-5V
70
40
400
50
MIN
-80
2SA1329
TYP.
MAX
UNIT
V
-0.2
-0.9
-0.4
-1.2
-10
-10
240
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=- I
B2
=-0.3A
R
L
=5Ω;V
CC
=-30V
0.3
1.0
0.5
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1329
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1329
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
