RICMOS™ SOI GATE ARRAYS
FEATURES
• Fabricated on Honeywell’s Radiation Hardened
– 0.65
µm
Leff
RICMOS™ IV SOI Process, HX2000
– 0.55
µm
Leff
RICMOS™ IV SOI Process, HX2000r
• Array Sizes from 40K to 390K Available Gates (Raw)
• HX2000 Supports 5V Core Operation
• HX2000r Supports 3.3V Core Operation
• HX2000r Supports Mixed Voltage I/O Buffers
• TTL (5V) or CMOS (5V/3.3V) Compatible I/O
• Configurable Multi-Port Gate Array SRAM
• Single or Dual Port Custom SRAM Drop-In Capability
• Supports Chip Level Power Down for Cold Sparing
• No Latchup
• Supports System Speeds Beyond 100 MHz
HX2000
HX2000r
FAMILY
• Total Dose Hardness
≥1x10
6
rad(SiO
2
)
• Dose Rate Upset Hardness:
≥1x10
10
rad(Si)/sec, HX2000*
≥1x10
9
rad(Si)/sec, HX2000r*
Option Available for:
≥1x10
11
rad(Si)/sec, HX2000*
≥1x10
10
rad(Si)/sec, HX2000r*
• Dose Rate Survivability
≥1x10
12
rad(Si)/sec*
• Soft Error Rate
≤1x10
-11
Errors/Bit/Day, HX2000
≤1x10
-10
Errors/Bit/Day, HX2000r
• Neutron Fluence Hardness to 1x10
14
/cm
2
*Projected
GENERAL DESCRIPTION
The HX2000 and HX2000r gate arrays are performance
oriented sea-of-transistor arrays, fabricated on
Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) pro-
cess. The HX2000 arrays are for 5V designs only. The
HX2000r arrays support 5V and 3.3V operation. High
density is achieved with the standard 3-layer metal or
optional 4-layer metal process, providing up to 290,000
usable gates. The high density and performance charac-
teristics of the RICMOS (Radiation Insensitive CMOS) SOI
process make possible device operation beyond 100 MHz
over the full military temperature range, even after expo-
sure to ionizing radiation exceeding 1x10
6
rad(SiO2). Flip-
Flops have been designed for a Soft Error Rate (SER) of
less than 1x10
-11
errors/bit/day in the Adams 90% worst
case environment.
Designers can choose from a wide variety of I/O types.
Output buffer options include 8 drive strengths, CMOS/TTL
levels, IEEE 1149.1 boundary scan, pull-up/pull-down re-
sistors, and three-state capability. Input buffers can be
selected for CMOS/TTL/Schmitt trigger levels, IEEE
1149.1 boundary scan and pull-up/pull-down resistors.
Bi-directional buffers are also available.
An important feature of HX2000r is the dual voltage I/O
capability in which the designer has complete flexibility in
terms of placement of I/O buffers. This feature allows
adjacent I/O buffers with different supply voltages.
The HX2000/HX2000r families provide options for config-
urable multi-port SRAMs. Word widths can be selected in
single bit increments. A variety of SRAM read and write port
options are available to serve most applications. Custom
drop-in macrocells can also be implemented to further
increase chip density. Word widths can be selected in two
bit increments. Single port and two port options are avail-
able.
The HX2000/HX2000r families have a special feature to
allow a chip level power down mode, in which the associ-
ated buses connected to the chip can remain active. This
Each HX2000/HX2000r design is founded on our proven
RICMOS ASIC library of SSI and MSI logic elements,
configurable RAM cells, and selectable I/O pads. The gate
arrays feature a global clock network capable of handling
multiple clock signals with low clock skew between regis-
ters. This family is fully compatible with Honeywell’s high
reliability screening procedures and consistent with QML
Class Q and V requirements.
Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com
1
HX2000/HX2000r
HX2000 Characteristics
Total Core Gate Count
U s a b l e G a t e Count
Maximum Die I/O
Maximum Package I/O (2)
Typical Delay—2 Input NAND
Selectable I/O
I/O Interface Levels
Typical Power Dissipation, µW/Gate/MHz
Operating Voltage
Operating Temperature
Process Technology
Minimum Geometry
HX2000
HX2000r
HX2000
HX2000r
3-Layer Metal
4-Layer Metal (1)
HX2040*
40K
27K
36K
132
TBD
HX2080
85K
53K
71K
176
176
HX2160
160K
91K
132K
240
240
HX2300
295K
156K
226K
336
320
HX2400
390K
200K
290K
372
320
270 ps at 5.0V, 290 ps at 3.3V
Driver, Receiver, Bi-Directional, Three-State
CMOS, TTL, Schmitt Trigger
0.6 @ 5.0V, 0.22 @ 3.3V
5.0V ± 10%
3.3V ± 10% (Core & I/O) and/or 5.0V ± 10% (I/O)
-55° C to 125° C
RICMOS™ IV SOI
0.65 µm L
eff
/ 0.8 µm Drawn (5V)
0.55 µm L
eff
/ 0.7 µm Drawn (3.3V)
* Planned Array
(1) Projected
(2) Design and package dependent.
high impedance off-state buffer feature allows users to
power down portions of their system for power savings or for
cold sparing.
Logic designers need not have prior experience in radiation
hardening. Honeywell’s VDS™ Toolkit and RICMOS IV SOI
libraries provide the necessary guidance to achieve first
pass design success. The VDS Toolkit supports industry
standard platforms including those offered by Mentor
Graphics and Synopsys.
Honeywell can perform design translations to the HX2000
arrays from other CAD platforms. Our synthesis capabilities
allow customers to use familiar CAD tools and libraries to
map existing designs to Honeywell library components.
The HX2000 family of gate arrays is the right choice for your
high reliability applications demanding high density and
radiation performance. To learn more about Honeywell’s
variety of space components, call us at 612-954-2888.
To learn more about Honeywell Solid State Electronics Center, visit our web site at
http://www.ssec.honeywell.com
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Helping You Control Your World
900144 Rev.A
2/97
2
测试/测量
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
