1.25 Gbit/s Transimpedance Amplifier
Preliminary Data
FOA1121A1
FOA1122A1
Bipolar IC
Features
•
•
•
•
Data rate up to 1.25 Gbit/s
Input sensitivity –27.0 dBm at BER = 10
–9
High overload: 2 mA
pp
maximum input current
Single supply voltage: + 4.5 V to + 5.5 V
P-TSSOP-16-1
• Internal DC-compensation loop increases
dynamic range
• No external components needed
• Internal bias generation for PIN-photodiode
• Internal low-pass filter to improve power supply rejection
• Operates with PIN- or APD-photodiode
• Monitor output for mirrored photodiode current
Applications
• Fibre optics data communication systems
• SONET OC-24, Gigabit-Ethernet
• Pre-amplifier modules
Type
FOA1121A1
FOA1122A1
Semiconductor Group
Ordering Code
Q67000-H4131
Q67000-H4132
1
Package
P-TSSOP-16-1
bare die
July 1998
FOA1121A1
FOA1122A1
0.5 kΩ
FILTER
V
ref
= 4.2 V
3.0 kΩ
FOA1121A1
FOA1122A1
VCC
GND
60
Ω
IN
-40
+4.0
+9.2
60
Ω
Q+
Q-
DC compensation
V
ref
MONITOR
s
Figure 1
Block diagram.
Table 1
Symbol
Pin Description
Function
Supply voltage
Data input from PIN- or APD-photodiode
Non-inverting data output
Inverting data output
Bias voltage for PIN-diode
Mirrored photodiode current (connect pin via 0 ... 2 kΩ to
V
CC
)
Ground
V
CC
IN
Q
+
Q
–
FILTER
MONITOR
GND
Semiconductor Group
2
July 1998
FOA1121A1
FOA1122A1
Electrical Characteristics
Absolute Maximum Ratings
Stresses listed below here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Ambient temperature T
amb
= -40
°C
... +85 °C
Parameter
Supply voltage
Junction temperature
Storage temperature
Relative ambient humidity
ESD voltage
Symbol
Limit Values
min.
max.
6.0
125
150
85/85
-0.5
-40
-40
500
Unit
V
°C
°C
Remarks
V
CC
T
j
T
S
V
ESD
%/°C no condensation
V
note 1) and 2)
Note: 1) Except IN-pin
2) HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993.
Recommended Operating Conditions
Ambient temperature T
amb
= -40
°C
... +85 °C
Parameter
Supply voltage
Data transmission rate
Supply current
Thermal resistance
Junction temperature
Symbol
Limit Values
min.
typ.
+5.0
1.25
46
140
-10
+125
max.
+5.5
+4.5
Unit
V
Gbit/s
mA
K/W
°C
Remarks
V
CC
I
CC
Θ
JA
see note 1)
see note 2)
T
j
Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device:
PCB area: 10 cm × 10 cm × 1.5 mm; copper area approx. 60 %; via holes to ground layer
underneath the device; all pins soldered.
2) Do not exceed the maximum junction temperature. If used as packaged version, provide
sufficient PCB heat sink to the device by soldering all pins and sufficient copper area
underneath the chip (see note 1).
Semiconductor Group
3
July 1998
FOA1121A1
FOA1122A1
AC/DC Characteristics
Conditions:
T
amb
= +25
°C,
V
CC
= +5.0 V,
C
external
= 0.85 pF
Parameter
Supply current
Input voltage
Input current
Input current before
clipping
Input resistance
Input sensitivity
Optical overload
Transimpedance
Symbol
Limit Values
min.
typ.
46
+1.65
2000
15
max.
56
mA
V
µA
pp
(Note 1)
µA
pp
Unit
Remarks
I
VCC
V
IN
I
IN
I
IN,CL
R
IN
P
IN
P
OVL
75
-27.0
0
48
0.6
0.78
800
48
60
72
1.1
Ω
dBm BER < 10
–9
(Note 1)
dBm BER < 10
–9
(Note 1)
kΩ
Vpp differential
into 2
×
50
Ω
MHz
Ω
V
ps
ps
dB
600
Ω
V
kHz AC-coupled outputs
(via 22 nF)
internally connected
to
V
CC
(Q
+
+ Q
–
)/2
3.2
µA
pp
<
I
IN
< 160
µA
pp
160
µA
pp
<
I
IN
< 1.6 mA
pp
R
T
Output voltage swing
∆
V
OUT
(Q
+
- Q
–
)
Bandwidth (–3 dB)
Output resistance
Output voltage
Output pattern jitter
(Note 1)
f
3db
R
out
VCM
OUT
t
j,P
V
CC
- 0.6
15
45
35
400
500
+4.2
65
Power supply rejection
PSSR
ratio
Bias resistance
Bias voltage
Low frequency cutoff
f < 10 MHz
(Note 2)
R
BIAS
V
BIAS
f
3db, low
Note: 1) Data rate: 1.25 Gbit/s; data sequence: PRBS 2
23
-1
2) Generated noise on power supply: sine curve, 100 mV
pp
(see application note b)
Semiconductor Group
4
July 1998
FOA1121A1
FOA1122A1
Package information
P-TSSOP-16-1
VCC
GND
GND
IN
FILTER
GND
GND
NC
1
2
16
15
NC
GND
GND
Q-
Q+
GND
GND
MONITOR
3
4
5
6
7
8
FOA1121A1
14
13
12
11
10
9
NC: not connected
Figure 2
Package pinning.
bare die
GND
GND
GND
GND
GND
VCC
NC
Size: 1,31 · 1,00 mm
2
IN
FOA1122A1
GND
GND
Q-
GND
Q+
GND
FILTER
GND
NC
GND
GND
GND
GND
NC: not connected
Figure 3
Pad assignment.
Semiconductor Group
5
GND
July 1998
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