MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
•
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 900 mW
Power Gain — 10 dB
Efficiency — 28%
MRFG35010MT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
Freescale Semiconductor, Inc...
•
9 Watts P1dB @ 3.55 GHz
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466 - 02, STYLE 1
PLD - 1.5
PLASTIC
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Symbol
R
θJC
Value
15
22.7
(2)
0.15
(2)
-5
33
- 65 to +150
175
- 20 to +85
Unit
Vdc
Watts
W/°C
Vdc
dBm
°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
6.6
(2)
Unit
°C/W
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
Rating
1
REV 2
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRFG35010MT1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 1.9 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
DQ
= 180 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P1dB
h
D
Min
—
—
—
—
- 1.2
- 1.2
9.0
—
23
Typ
2.9
< 1.0
0.1
2.0
- 1.0
- 0.95
10
9
28
Max
—
100
1.0
15
- 0.7
- 0.7
—
—
—
Unit
Adc
µAdc
mAdc
mAdc
Vdc
Vdc
dB
W
%
Freescale Semiconductor, Inc...
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 180 mA, P
out
= 900 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 900 mW Avg., I
DQ
= 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR
—
- 43
- 40
dBc
MRFG35010MT1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GS
V
DD
=12.0
C12
C11
C10
C9
C8
C7
C6
R1
C4 C5
C17
C18
C19
C20
C21
C22
C23
C15 C16
Z5
RF
INPUT
Z1
C1
Z2
Z10
RF
OUTPUT
Z14
C26
C2
Z3
C3
Z4
Z6
C13
Z7
Z8
C14
Z9
Z11 Z12
C25
Z13
Freescale Semiconductor, Inc...
C32
C31
C30
C29
C27
Z1, Z14
Z2
Z3
Z4
Z5, Z10
Z6
Z7
0.044″
0.044″
0.340″
0.380″
0.015″
0.027″
0.538″
x 0.125″ Microstrip
x 0.105″ Microstrip
x 0.357″ Microstrip
x 0.426″ Microstrip
x 0.527″ Microstrip
x 0.347″ Microstrip
x 0.115″ Microstrip
Z8
Z9
Z11
Z12
Z13
PCB
0.439″ x 0.136″ Microstrip
0.150″ x 0.280″ Microstrip
0.349″ x 0.302″ Microstrip
0.055″ x 0.130″ Microstrip
0.044″ x 0.502″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Table 1. 3.5 GHz Test Circuit Component Designations and Values
Designation
C1, C26
C2, C14
C3, C13, C30
C4, C5, C15, C16
C6, C17
C7, C18
C8, C19
C9, C20
C10, C21
C11, C22
C12, C23
C25, C27
C29
R1
Description
7.5 pF Chip Capacitors, B Case, ATC
0.4 pF Chip Capacitors (0805), AVX
0.2 pF Chip Capacitors (0805), AVX
3.9 pF Chip Capacitors, AVX
10 pF Chip Capacitors, A Case, ATC
100 pF Chip Capacitors, A Case, ATC
100 pF Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.1
µF
Chip Capacitors, B Case, ATC
3.9
µF
Chip Capacitors, B Case, ATC
22
µF,
35 V Tantalum Surface Mount Capacitors, Newark
1.0 pF Chip Capacitors (0805), AVX
0.7 pF Chip Capacitor (0805), AVX
50
W
Chip Resistor, Newark
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRFG35010MT1
3
Freescale Semiconductor, Inc.
C8
C7
+
C12
R1
C5
C11
C10
C9
C6
C18
C17
C15
C16
C20
C21
C22
C23
C19
+
C4
C13
C14
C25
Freescale Semiconductor, Inc...
C2
C1
C3
C26
C32
C31
C30
C29
C27
MRFG35010M
Rev 1
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010MT1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
0
IRL, INPUT RETURN LOSS (dB)
−10
−20
−30
−40
−50
−60
0.1
1
P
out
, OUTPUT POWER (WATTS)
10
ACPR
IRL
V
DS
= 12 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
Γ
S
= 0.898é−134.03_,
Γ
L
= 0.828é−140.67_
0
−10
−20
−30
−40
−50
−60
Freescale Semiconductor, Inc...
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
12.5
G T , TRANSDUCER GAIN (dB)
12
V
DS
= 12 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.898é−134.03_,
Γ
L
= 0.828é−140.67_
PAE
11
G
T
60
50
40
30
20
10
0
10
PAE
, POWER ADDED EFFICIENCY (%)
11.5
10.5
10
9.5
0.1
1
P
out
, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MOTOROLA RF DEVICE DATA
ACPR (dBc)
For More Information On This Product,
Go to: www.freescale.com
MRFG35010MT1
5
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