MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9210/D
The RF MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common source amplifier
applications in 26 volt base station equipment.
•
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 x 950 mA
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 16.5 dB
Efficiency — 25.5%
Adjacent Channel Power —
750 kHz: - 46.2 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
•
Internally Matched, Controlled Q, for Ease of Use
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,
40 Watts Avg. N - CDMA
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
880 MHz, 200 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G - 04, STYLE 1
NI - 860C3
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
565
3.2
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value (1)
0.31
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 )
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 800 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.5
2.5
—
—
2.8
3.3
0.2
8.8
4
4.5
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6.7 Adc)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
N - CDMA Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
N - CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
N - CDMA Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
N - CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N - CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Each side of device measured separately.
(2) Device measured in push - pull configuration.
G
ps
15.8
16.5
—
dB
η
23
25.5
—
%
ACPR
—
- 46.2
- 45
dBc
IRL
9
17.5
—
dB
G
ps
—
16.5
—
dB
η
—
25.5
—
%
ACPR
—
- 47.5
—
dBc
IRL
—
15
—
dB
Ψ
No Degradation In Output Power
MRF9210R3
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Table 1. 880 MHz Test Circuit Component Designations and Values
Part
B1, B2
Balun 1, Balun 2
C1
C2
C3, C4
C5
C6
C7
C8
C9, C10
C11, C12, C13, C14
C15, C17, C19, C21
C16, C18
Description
11
Ω
RF Beads, Surface Mount (0805)
0.8 - 1 GHz Xinger Balun
27 pF Chip Capacitor, B Case
12 pF Chip Capacitor (0603)
3.3 pF Chip Capacitors (0603)
9.1 pF Chip Capacitor, R Case
4.3 pF Chip Capacitor, B Case
0.4 - 2.5 pF Variable Capacitor
12 pF Chip Capacitor, B Case
470
µF,
63 V Electrolytic Capacitors
22
µF,
35 V Tantalum Chip Capacitors
0.01
µF,
100 V Chip Capacitors
0.56
µF,
50 V Chip Capacitors
2.2
µF,
50 V Chip Capacitors
47
µF,
16 V Tantalum Chip Capacitors
12 nH Inductor (0603)
22 nH Inductor
12.5 nH Inductors
10 nH Inductors (0603)
30 mil,
ε
r
= 2.56
30 mil,
ε
r
= 2.56
24
Ω,
1/8 W Chip Resistors
Value, P/N or DWG
2508051107Y0
3A412
100B270JP500X
06035J120GBT
06035J3R3BBT
180R8R2JW500X
100B4R3CP500X
27283PC
100B120JP500X
NACZF471M63V (18x22)
T491X226K035AS
C1825C103J1GAC
C1825C564J5GAC
C1825C225J5RAC3810
TPSD476K016R0150
0603HC- 12NHJBU
B07T - 5
A04T - 5
0603HC- 10NHJBU
DS0928
DS0978
Manufacturer
Fair - Rite
Anaren
ATC
AVX / Kyocera
AVX / Kyocera
ATC
ATC
Gigatronics
ATC
Nippon
Kemet
Kemet
Kemet
Kemet
AVX
Coilcraft
Coilcraft
Coilcraft
Coilcraft
DS Electronics
DS Electronics
Dale Vishay
Freescale Semiconductor, Inc...
C20, C22
C23, C24
L1
L2
L3, L4
L5, L6
PCB Gate
PCB Drain
R1, R2
MRF9210 Gate
MRF9210 Drain
C14 C13
C16
C22
V
GG
V
DD
C23
Balun 1
C21
L6
R1
C3
C15
B1
L3
Balun 2
C9
C1
L1
C2
C5
C6
C8
C7
L2
R2
C19
C24
C20
L5
C4
B2
L4
C17
C10
C18
V
GG
C12 C11
V
DD
MRF9210
Rev 3
Figure 1. 880 MHz Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18
17
16
G ps , POWER GAIN (dB)
15
14
13
12
11
10
9
8
860
865
870
875
880
885
890
895
ACPR
IRL
G
ps
η
V
DD
= 26 Vdc
P
out
= 40 W (Avg.)
I
DQ
= 1900 mA
N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
30
28
26
24
22
−30
−35
−40
−45
−50
−55
900
ACPR (dBc)
h
, DRAIN
EFFICIENCY (%)
−10
−15
−20
−25
−30
−35
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 2. Class AB Broadband Circuit
Performance
17
G ps , POWER GAIN (dB)
16.5
16
15.5
V
DD
= 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
I
DQ
= 2200 mA
1900 mA
1600 mA
IMD, INTERMODULATION DISTORTION (dBc)
17.5
−20
V
DD
= 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
−30
−40
−50
I
DQ
= 1300 mA
−60
1600 mA
−70
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1900 mA
2200 mA
1300 mA
15
14.5
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 3. Power Gain versus Output Power
Figure 4. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
−50
−60
−70
−80
−90
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
5th Order
7th Order
3rd Order
V
DD
= 26 Vdc
I
DQ
= 1900 mA
f1 = 879.5 MHz, f2 = 880.05 MHz
G ps , POWER GAIN (dB)
22
20
18
G
ps
16
14
12
η
10
1
10
P
out
, OUTPUT POWER (WATTS) AVG.
100
V
DD
= 26 Vdc
I
DQ
= 1900 mA
f = 880 MHz
IRL, INPUT RETURN LOSS (dB)
60
50
40
30
20
10
0
η
, DRAIN EFFICIENCY (%)
Figure 5. Intermodulation Distortion Products
versus Output Power
Figure 6. Power Gain and Efficiency versus
Output Power
MRF9210R3
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
η
, DRAIN EFFICIENCY (%)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
1.23 MHz BW
−ACPR @
30 kHz BW
+ACPR @
30 kHz BW
20
18
G ps , POWER GAIN (dB)
16
14
12
10
8
1
IMD
10
P
out
, OUTPUT POWER (WATTS) PEP
100
G
ps
η
V
DD
= 26 Vdc
I
DQ
= 1900 mA
f1 = 879.5 MHz, f2 = 880.05 MHz
60
40
20
0
−20
−40
−60
Freescale Semiconductor, Inc...
Figure 7. Power Gain, Efficiency and IMD
versus Output Power
20
18
G ps , POWER GAIN (dB)
G
ps
16
14
12
10
8
1
η
40
20
0
V
DD
= 26 Vdc, I
DQ
= 1900 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
ACPR 750 kHz
ALT 1.98 MHz
10
P
out
, OUTPUT POWER (WATTS) AVG.
−20
−40
−60
−80
100
Figure 8. N - CDMA Performance Output Power
versus Gain, ACPR, Efficiency
80
Pout , OUTPUT POWER (WATTS) AVG.
70
60
(dB)
50
40
30
20
10
18
20
22
24
26
28
30
32
34
V
DD
, VOLTAGE (V)
V
DD
= 26 Vdc, I
DQ
= 1900 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
4.8
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−95.2
−2.5
−ALT @
30 kHz BW
+ALT @
30 kHz BW
−2.0 −1.5 −1.0
−0.5
0
0.5
1.0
1.5
2.0
2.5
f, FREQUENCY (MHz)
Figure 9. Single - Carrier Maximum N - CDMA Linear
Output Power versus Drain Voltage
Figure 10. Typical N - CDMA Spectrum
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
5
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