SRAM Module, 32KX64, 7ns, CMOS
| 参数名称 | 属性值 |
| 厂商名称 | Micron Technology |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 7 ns |
| 其他特性 | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
| JESD-30 代码 | R-XDMA-N160 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 64 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 160 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32KX64 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 最小待机电流 | 2 V |
| 最大供电电压 (Vsup) | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| MT2LSYT3264C4G-7L | MT2LSYT3264C4G-8P | MT2LSYT3264C4G-6L | MT2LSYT3264C4G-5L | MT2LSYT3264C4G-5P | MT2LSYT3264C4G-6P | MT2LSYT3264C4G-7P | MT2LSYT3264C4G-8L | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 32KX64, 7ns, CMOS | SRAM Module, 32KX64, 8ns, CMOS | SRAM Module, 32KX64, 6ns, CMOS | SRAM Module, 32KX64, 5ns, CMOS | SRAM Module, 32KX64, 5ns, CMOS | SRAM Module, 32KX64, 6ns, CMOS | SRAM Module, 32KX64, 7ns, CMOS | SRAM Module, 32KX64, 8ns, CMOS |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Reach Compliance Code | unknown | compliant | compliant | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 7 ns | 8 ns | 6 ns | 5 ns | 5 ns | 6 ns | 7 ns | 8 ns |
| 其他特性 | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE | OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
| JESD-30 代码 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 | R-XDMA-N160 |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 160 | 160 | 160 | 160 | 160 | 160 | 160 | 160 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 32KX64 | 32KX64 | 32KX64 | 32KX64 | 32KX64 | 32KX64 | 32KX64 | 32KX64 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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