ASMT-Ax00
1W Power LED Light Source
Data Sheet
Description
This 1W Power LED Light Source is a high performance
energy efficient device which can handle high thermal
and high driving current. The exposed pad design enables
excellent heat transfer from the package to the mother-
board. Option with electrically isolated metal slug is also
available.
The White Power LED is available in the range of color
temperature from 2700K to 10000K
The low profile package design is suitable for a wide variety
of applications especially where height is a constraint.
The package is compatible with reflow soldering process.
This part has a foot print that is compatible to most of the
high power LED in the market today.
Features
x
Available in Red, Red Orange, Amber, Blue, Royal Blue,
Green, Cool White, Neutral White and Warm White color
x
Energy efficient
x
Exposed metal slug for excellent heat transfer
x
Compatible with reflow soldering process
x
High current operation
x
Long operation life
x
Wide viewing angle at 130°
x
Silicone encapsulation
x
Non-ESD sensitive (threshold > 16 kV)
x
MSL 2a products
Applications
x
Architectural lighting
x
Channel backlighting
x
Contour lighting
x
Retail Display lighting
x
Decorative lighting
x
Garden lighting
Package Dimensions
7.4
Ø 6.0
1.1
1.5
2.3
Ø 8.0
TOP VIEW
BOTTOM VIEW
Anode
Lead
4.1 (ref:)
Metal Slug
7.4
Lens
3.0
0.5
2.0
6.0
13.6
Cathode
Lead
Metal Slug
Body
Figure 1. ASMT-Ax00 package outline drawing.
Notes:
1. All dimensions in millimeters.
2. Metal slug is connected to anode for electrically non-isolated option.
3. Tolerance is ±0.1 mm unless otherwise specified.
4 . Terminal Finish: Ag plating
Part Numbering System
ASMT
–
A x
1
00
–
x
2
x
3
x
4
x
5
x
6
Packaging
Option
Color Bin
Selection
Maximum
Flux Bin
Selection
Minimum
Flux Bin
Selection
Dice
Type
N
– InGaN
A
–
AllnGaP
Color
R
–
Red
H
–
Red Orange
A
–
Amber
G
–
Green
B
–
Blue
L
–
Royal Blue
W
–
Cool White
N
–
Neutral White
Y –
Warm White
Note:
1. Please refer to Page 10 for selection details.
2
Device Selection Guide
(T
j
=
25°C)
Luminous
Flux
(lm)
/ Radiometric Power
(mW),
Φ
V
[1,2]
Part Number
ASMT-AR00-AQR00
ASMT-AR00-ARR00
ASMT-AH00-AQR00
ASMT-AH00-ARR00
ASMT-AA00-AQR00
ASMT-AA00-ARR00
ASMT-AB00-NLN00
ASMT-AB00-NMP00
ASMT-AL00-NMP00
ASMT-AL00-NNP00
ASMT-AG00-NST00
ASMT-AW00-NST00
ASMT-AW00-NSU00
ASMT-AW00-NTU00
ASMT-AN00-NSU00
ASMT-AN00-NTU00
ASMT-AY00-NRT00
ASMT-AY00-NST00
Warm White
Neutral White
Green
Cool White
Royal Blue
Blue
Amber
Red Orange
Color
Red
Min.
30.6
39.8
30.6
39.8
30.6
39.8
10.7
13.9
225 mW
275 mW
51.7
51.7
51.7
67.2
51.7
67.2
39.8
51.7
Typ.
43.0
46.0
43.0
46.0
43.0
46.0
15.0
18.0
320 mW
350 mW
65.0
65.0
70.0
80.0
70.0
80.0
60.0
65.0
Max.
51.7
51.7
51.7
51.7
51.7
51.7
23.5
30.6
435 mW
435 mW
87.4
87.4
99.6
99.6
99.6
99.6
87.4
87.4
Test
Current
(mA)
350
350
350
350
350
350
350
Dice
Technology
AllnGaP
AlInGaP
AllnGaP
InGaN
InGaN
InGaN
InGaN
Electrically
Isolated
Metal Slug
No
[3]
No
[3]
No
[3]
Yes
Yes
Yes
Yes
350
350
InGaN
InGaN
Yes
Yes
Notes:
1. Φ
V
is the total luminous flux / radiometric power output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux and power tolerance is ±10 %
3. Electrically isolated metal slug option is also available. Please contact your Avago sale representative.
Absolute Maximum Ratings
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
Reverse Voltage
LED Junction Temperature
Operating Metal Slug Temperature Range at 350 mA
Storage Temperature Range
Soldering Temperature
Notes:
1. Derate linearly based on Figure 10 for AlInGaP and Figure 17 for
InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1 kHz.
AllnGaP
350
1000
1085
5
125
-40 to +115
-40 to +120
InGaN
350
1000
1400
5
135
-40 to +120
-40 to +120
Refer to Figure 24
Units
mA
mA
mW
V
°C
°C
°C
3
Optical Characteristics
at
350
mA
(TJ
=
25
°C)
Peak
Wavelength,
O
PEAK
(nm)
Part Number
ASMT-AR00-AQR00
ASMT-AR00-ARR00
ASMT-AH00-AQR00
ASMT-AH00-ARR00
ASMT-AA00-AQR00
ASMT-AA00-ARR00
ASMT-AG00-NST00
ASMT-AB00-NLN00
ASMT-AB00-NMP00
ASMT-AL00-NMP00
ASMT-AL00-NNP00
Royal Blue
Green
Blue
Amber
Red Orange
Dominant
Wavelength,
O
D [1]
(nm)
Typ.
625
625
615
615
590
590
525
470
470
455
455
Viewing
Angle,
2T
½ [2]
(°)
Typ.
130
130
130
130
130
130
130
130
130
130
130
Luminous Efficiency
(lm/W)
Typ.
51
55
51
55
51
55
53
12
15
Not applicable
Not applicable
Color
Red
Typ.
635
635
625
625
598
598
519
460
460
450
450
Correlated Color
Temperature,
CCT (Kelvin)
Part Number
ASMT-AW00-NST00
ASMT-AW00-NSU00
ASMT-AW00-NTU00
ASMT-AN00-NSU00
ASMT-AN00-NTU00
ASMT-AY00-NRT00
ASMT-AY00-NST00
Warm White
Neutral White
Viewing
Angle,
2T
½ [2]
(°)
Typ.
130
130
130
130
130
130
130
Luminous Efficiency
(lm/W)
Typ.
53
57
65
57
65
53
53
Color
Cool White
Min.
4500
4500
4500
3500
3500
2700
2700
Max.
10000
10000
10000
4500
4500
3500
3500
Notes:
1. The dominant wavelength,
O
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2.
T
½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Electrical Characteristic
at
350
mA
(T
J
=
25°C)
Forward
Voltage,
V
F
(Volts)
at I
F
=
350mA
Dice Type
AllnGaP
InGaN
Thermal Resistance,
RT
j-ms
(°C/W)
[1]
Max.
3.1
4.0
Min.
1.9
2.8
Typ
2.4
3.5
Typ.
10
10
Notes:
1. RT
j-ms
is Thermal Resistance from LED junction to metal slug.
4
AlInGaP
1
0.9
AMBER
0.8
RED
ORANGE
RED
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
530 545 560 575 590 605 620 635 650 665 680
WAVELENGTH -
nm
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
100
150
200
250
DC
FORWARD CURRENT -
mA
300
350
Figure
2.
Relative Intensity vs.
Wavelength for
Red, Red
Orange
and Amber.
Figure
3.
Relative
Luminous
Flux vs. Mono Pulse
Current.
500
450
400
350
300
250
200
150
100
50
0
0
0.5
1
1.5
2
FORWARD VOLTAGE - V
2.5
3
FORWARD CURRENT -
mA
NORMALIZED
INTENSITY
RELATIVE
LUMINOUS FLUX
(NORMALIZED
AT
350
mA)
RELATIVE
INTENSITY
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
-60
-30
0
30
60
ANGULAR DISPLACEMENT
-
DEGREES
90
Figure
4.
Forward
Current
vs. Forward
Voltage.
Figure
5.
Radiation Pattern
for
Red, Red
Orange
and Amber.
1.4
1.2
PULSE
CURRENT,
I
P
- A
1.0
0.8
0.6
0.4
0.2
0.0
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1.4
D=
t
p
T
t
p
I
F
1.2
PULSE
CURRENT,
I
P
- A
D=
0.05
0.10
0.25
0.50
1.00
D=
T
t
p
T
t
p
I
F
T
D=
0.05
0.10
0.25
0.50
1.00
1.0
0.8
0.6
0.4
0.2
0.0
0.00001 0.0001
0.001
0.01
0.1
1
10
100
PULSE DURATION, tp - sec
Figure
6.
Maximum pulse current vs. ambient temperature.
Derated based on T
A
=
25°C,
Rθ
J-A
=
50°C/W.
PULSE DURATION, tp - sec
Figure
7.
Maximum pulse current vs. ambient temperature.
Derated based on T
A
=
85°C,
Rθ
J-A
=
50°C/W.
5
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
