MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF19085/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 26 Volts,
I
DQ
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19085R3
MRF19085LR3
MRF19085SR3
MRF19085LSR3
1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF19085R3,MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085SR3, MRF19085LSR3
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
273
1.56
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value (1)
0.79
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 850 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
—
3.5
0.18
6
4
4.5
0.210
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 850 mA, f = 1930 MHz, VSWR
= 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
G
ps
12
13
—
dB
η
21
23
—
%
IMD
—
- 36.5
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 12
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
G
ps
—
13
—
dB
Symbol
Min
Typ
Max
Unit
η
—
36
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12
—
dB
Freescale Semiconductor, Inc...
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 850 mA, f = 1990 MHz)
P1dB
—
90
—
W
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
3
Freescale Semiconductor, Inc.
V
GG
R1
R3
B1
+
C5
C4
C3
C2
C7
+
C8
L1
C9
C10
+
C11
+
C12
V
DD
R2
Z4
RF
INPUT
Z9
RF
OUTPUT
Z1
C1
Z2
Z3
DUT
Z5
Z6
Z7
C6
Z8
Freescale Semiconductor, Inc...
Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic
Table 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values
Part
B1
C1
C2, C7
C3, C9
C4, C10
C5
C6
C8
C11, C12
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Board
PCB
Description
Short Ferrite Bead
51 pF Chip Capacitor
5.1 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
0.1
µF
Tantalum Surface Mount Capacitor
10 pF Chip Capacitor
10
µF
Tantalum Surface Mount Capacitor
22
µF
Tantalum Surface Mount Capacitors
1 Turn, 20 AWG, 0.100″ ID
Type N Flange Mounts
1.0 kΩ, 1/8 W Chip Resistor
220 kΩ, 1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistor
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
0.030″ Glass
Teflon
Etched Circuit Boards
0.750″ x 0.0840″
1.090″ x 0.0840″
0.400″ x 1.400″
0.520″ x 0.050″
0.540″ x 1.133″
0.400″ x 0.140″
0.555″ x 0.0840″
0.720″ x 0.0840″
0.560″ x 0.070″
GX-0300-55-22,
ε
r
= 2.55
MRF19085 Rev. 4
Keene
CMR
3052-1648-10
Value, P/N or DWG
2743019447
100B510JCA500X
100B5R1JCA500X
100B102JCA500X
CDR33BX104AKWS
T491C105M050
100B100JCA500X
T495X106K035AS4394
T491X226K035AS4394
ATC
ATC
ATC
Kemet
Kemet
ATC
Kemet
Kemet
Motorola
Omni Spectra
Manufacturer
Fair Rite
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
C8
C2
R1
B1
C7
L1
C9
R2
CUT OUT AREA
C5
C4
C3
C11 C12
C6
R3
C10
C1
MRF19085
Rev.4
Freescale Semiconductor, Inc...
Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
5
PCB设计
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