MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF1550T1/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
•
Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Broadband–Full Power Across the Band: 135–175 MHz
•
Broadband Demonstration Amplifier Information Available
Upon Request
•
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
N–Channel Enhancement–Mode Lateral MOSFETs
MRF1550T1
MRF1550FT1
175 MHz, 50 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 1264–09, STYLE 1
TO–272
PLASTIC
MRF1550T1
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
40
±20
12
165
0.50
–65 to +150
175
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
0.75
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1550T1 MRF1550FT1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 800
µA)
Drain–Source On–Voltage
(V
GS
= 5 Vdc, I
D
= 1.2 A)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 4.0 Adc)
DYNAMIC CHARACTERISTICS
V
GS(th)
R
DS(on)
V
DS(on)
1
—
—
—
—
—
3
0.5
1
Vdc
Ω
Vdc
I
DSS
I
GSS
—
—
—
—
1
0.5
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF CHARACTERISTICS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
f = 175 MHz
f = 175 MHz
C
iss
C
oss
C
rss
—
—
—
—
—
—
500
250
35
pF
pF
pF
G
ps
η
Ψ
dB
10
50
—
—
—
%
—
No Degradation in Output Power
Before and After Test
Load Mismatch
(V
DD
= 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
MRF1550T1 MRF1550FT1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
C10
C9
C8
+
R4
R3
C21
L5
R2
N1
C1
Z1
C2
L1
C3
Z2
C4
Z3
C5
L2
C7
R1
RF
INPUT
Z4
C6
Z5
DUT
C11
C12
C13
C14
C15
C16
Z6
Z7
Z8
L3
Z9
L4
Z10
Z11 C17
N2
RF
OUTPUT
C20
C19
C18
+
V
DD
Freescale Semiconductor, Inc...
B1
C1
C2
C3
C4, C16
C5
C6
C7, C17
C8, C18
C9, C19
C10
C11, C12
C13
C14
C15
C20
L1
L2
L3
Ferroxcube #VK200
180 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
300 pF, 100 mil Chip Capacitors
10
µF,
50 V Electrolytic Capacitors
0.1
µF,
100 mil Chip Capacitors
470 pF, 100 mil Chip Capacitor
200 pF, 100 mil Chip Capacitors
22 pF, 100 mil Chip Capacitor
30 pF, 100 mil Chip Capacitor
6.8 pF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
18.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #24 AWG, 0.250″ ID
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Z11
Board
1 Turn, #26 AWG, 0.240″ ID
3 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
5.1
Ω,
1/4 W Chip Resistor
39
Ω
Chip Resistor (0805)
1 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
1.000″ x 0.080″ Microstrip
0.400″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.100″ x 0.223″ Microstrip
0.160″ x 0.080″ Microstrip
0.260″ x 0.080″ Microstrip
0.280″ x 0.080″ Microstrip
0.270″ x 0.080″ Microstrip
0.730″ x 0.080″ Microstrip
Glass Teflon
, 31 mils
Figure 1. 135 – 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
80
Pout , OUTPUT POWER (WATTS)
70
60
50
40
30
20
10
0
0
1.0
V
DD
= 12.5 Vdc
3.0
2.0
4.0
P
in
, INPUT POWER (WATTS)
5.0
6.0
175 MHz
155 MHz
0
135 MHz
IRL, INPUT RETURN LOSS (dB)
-5
175 MHz
135 MHz
-15
155 MHz
-20
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
70
80
V
DD
= 12.5 Vdc
-10
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1550T1 MRF1550FT1
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
16
175 MHz
15
14
GAIN (dB)
155 MHz
13
12
11
10
10
20
40
50
60
30
P
out
, OUTPUT POWER (WATTS)
h
, DRAIN EFFICIENCY (%)
70
60
50
40
V
DD
= 12.5 Vdc
80
30
10
20
40
50
60
30
P
out
, OUTPUT POWER (WATTS)
70
80
135 MHz
155 MHz
175 MHz
80
135 MHz
V
DD
= 12.5 Vdc
70
Freescale Semiconductor, Inc...
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
70
Pout , OUTPUT POWER (WATTS)
135 MHz
80
155 MHz
h
, DRAIN EFFICIENCY (%)
70
175 MHz
135 MHz
60
65
175 MHz
60
155 MHz
55
V
DD
= 12.5 Vdc
P
in
= 35 dBm
400
600
800
I
DQ
, BIASING CURRENT (mA)
1000
1200
50
V
DD
= 12.5 Vdc
P
in
= 35 dBm
400
600
800
I
DQ
, BIASING CURRENT (mA)
1000
1200
50
200
40
200
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
80
155 MHz
h
, DRAIN EFFICIENCY (%)
70
175 MHz
90
Pout , OUTPUT POWER (WATTS)
80
70
60
50
40
30
10
11
12
13
135 MHz
175 MHz
I
DQ
= 500 mA
P
in
= 35 dBm
14
15
155 MHz
60
135 MHz
50
I
DQ
= 500 mA
P
in
= 35 dBm
11
12
13
14
15
40
10
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1550T1 MRF1550FT1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Z
o
= 10
Ω
f = 175 MHz
f = 175 MHz
Z
OL
*
Z
in
f = 135 MHz
f = 135 MHz
Freescale Semiconductor, Inc...
V
DD
= 12.5 V, I
DQ
= 500 mA, P
out
= 50 W
f
MHz
135
155
175
Z
in
Z
in
Ω
4.1 + j0.5
4.2 + j1.7
3.7 + j2.3
Z
OL
*
Ω
1.0 + j0.6
1.2 + j.09
0.7 + j1.1
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 10. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF1550T1 MRF1550FT1
5
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