Si4992EY
New Product
Vishay Siliconix
Dual N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
75
r
DS(on)
(Ω)
0.048 @ V
GS
= 10 V
0.062 @ V
GS
= 4.5 V
I
D
(A)
4.8
4.2
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
High-Efficiency PWM Optimized
APPLICATIONS
D
Automotive Such As:
-- High-Side Switch
-- Motor Drives
-- 42-V Battery
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4992EY—E3
Si4992EY-T1—E3 (with Tape and Reel)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
a
Continuous Source Current
a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle
≤1%)
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
01
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
10 secs
75
20
4.8
Steady State
Unit
V
3.6
2.8
1.1
20
8
3.2
mJ
1.4
0.8
--55 to 175
W
_C
A
I
D
I
S
I
DM
I
AS
E
AS
3.7
2
2.4
P
D
T
J
, T
stg
1.4
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
www.vishay.com
t
≤
10 sec
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
50
85
31
Maximum
62.5
110
37
Unit
_C/W
C/
1
Si4992EY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
20
V
V
DS
= 75 V, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V, T
J
= 85_C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.8 A
V
GS
= 4.5 V, I
D
= 4.2 A
V
DS
= 15 V, I
D
= 4.8 A
I
S
= 2.4 A, V
GS
= 0 V
20
0.039
0.050
16
0.8
1.2
0.048
0.062
S
V
1
3
100
1
20
mA
A
Ω
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.4 A, di/dt = 100 A/ms
V
DD
= 38 V, R
L
= 38
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= 38 V, V
GS
= 10 V, I
D
= 4.8 A
14
2.4
3.5
3.6
7
10
22
10
25
15
15
35
15
50
ns
Ω
21
nC
Notes
a. Pulse test; pulse width
≤
300
ms,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 5 V
16
I
D
-- Drain Current (A)
I
D
-- Drain Current (A)
4V
16
20
Transfer Characteristics
12
12
8
8
T
C
= 150_C
4
4
3V
0
0
1
2
3
4
5
25_C
--55_C
0
0
1
2
3
4
5
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
www.vishay.com
2
Si4992EY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.08
r
DS(on)
-- On-Resistance (
Ω
)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
4
8
12
16
20
V
GS
= 4.5 V
V
GS
= 10 V
C -- Capacitance (pF)
900
800
700
C
iss
600
500
400
300
200
100
0
0.0
C
rss
C
oss
Vishay Siliconix
Capacitance
12.5
25.0
37.5
50.0
62.5
75.0
I
D
-- Drain Current (A)
V
DS
-- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
-- Gate-to-Source Voltage (V)
V
DS
= 50 V
I
D
= 4.8 A
8
r
DS(on)
-- On-Resiistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q
g
-- Total Gate Charge (nC)
0.6
--50
2.2
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 4.8 A
6
4
2
--25
0
25
50
75
100
125
150
175
T
J
-- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
-- Source Current (A)
T
J
= 175_C
10
r
DS(on)
-- On-Resistance (
Ω
)
0.08
I
D
= 4.8 A
0.06
0.04
T
J
= 25_C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
www.vishay.com
3
Si4992EY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
--0.0
--0.2
--0.4
--0.6
10
--0.8
--1.0
--50
0
0.001
I
D
= 250
mA
40
Power (W)
50
60
50
Single Pulse Power
30
20
--25
0
25
50
75
100
125
150
175
0.01
0.1
1
Time (sec)
10
100
600
T
J
-- Temperature (_C)
Safe Operating Area
100
r
DS(on)
Limited
10
I
D
-- Drain Current (A)
I
DM
Limited
P(t) = 0.0001
1
I
D(on)
Limited
T
A
= 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
0.1
0.01
0.1
1
BV
DSS
Limited
10
V
DS
-- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
t
1
t
2
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
-
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
Si4992EY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
Square Wave Pulse Duration (sec)
1
10
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
www.vishay.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
