NCV6334B
3MHz, 2A Synchronous
Buck Converter
High Efficiency, Low Ripple, Adjustable
Output Voltage
The NCV6334B, a family of synchronous buck converters, which is
optimized to supply different sub systems of portable applications
powered by one cell Li−ion or three cell Alkaline/NiCd/NiMH
batteries. The devices are able to deliver up to 2 A on an external
adjustable voltage. Operation with 3 MHz switching frequency allows
employing small size inductor and capacitors. Input supply voltage
feedforward control is employed to deal with wide input voltage
range. Synchronous rectification and automatic PWM/PFM power
save mode offer improved system efficiency. The NCV6334B is in a
space saving, low profile 2.0 x 2.0 x 0.75 mm WDFN−8 package.
Features
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MARKING
DIAGRAM
1
1
WDFN8
CASE 511BT
AM MG
G
AM = Specific Device Code
M = Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
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•
•
•
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•
•
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2.3 V to 5.5 V Input Voltage Range
External Adjustable Voltage
Up to 2 A Output Current
3 MHz Switching Frequency
Synchronous Rectification
Automatic Power Save
Enable Input
Power Good Output Option
Soft Start
Over Current Protection
Active Discharge When Disabled
Thermal Shutdown Protection
WDFN−8, 2 x 2 mm, 0.5 mm Pitch Package
Maximum 0.8 mm Height for Super Thin Applications
This is a Pb−Free Device
Cellular Phones, Smart Phones, and PDAs
Portable Media Players
Digital Still Cameras
Wireless and DSL Modems
USB Powered Devices
Point of Load
Game and Entertainment System
PINOUT
PGND
SW
AGND
FB
1
2
9
3
4
(Top View)
6
5
PG
EN
8
7
PVIN
AVIN
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
Typical Applications
©
Semiconductor Components Industries, LLC, 2012
November, 2012
−
Rev. 3
1
Publication Order Number:
NCV6334B/D
NCV6334B
Vo = 0.6V to Vin
Cout
10uF
R1
Cfb
1uH
NCV6334B
PGND
SW
AGND
FB
R2
PVIN
AVIN
PG
EN
Cin
10uF
Vin = 2.3V to 5.5V
Rpg
1M
Power Good
Enable
Power Good Output
Figure 1. Typical Application Circuits
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Name
PGND
SW
AGND
FB
EN
PG
Type
Power
Ground
Power
Output
Analog
Ground
Analog
Input
Digital
Input
Digital
Output
Analog
Input
Power
Input
Exposed
Pad
Description
Power Ground for power, analog blocks. Must be connected to the system ground.
Switch Power pin connects power transistors to one end of the inductor.
Analog Ground analog and digital blocks. Must be connected to the system ground.
Feedback Voltage from the buck converter output. This is the input to the error amplifier. This pin
is connected to the resistor divider network between the output and AGND.
Enable of the IC. High level at this pin enables the device. Low level at this pin disables the
device.
PG pin is for NCV6334B with Power Good option. It is open drain output. Low level at this pin
indicates the device is not in power good, while high impedance at this pin indicates the device is
in power good.
Analog Supply. This pin is the analog and the digital supply of the device. An optional 1
mF
or lar-
ger ceramic capacitor bypasses this input to the ground. This capacitor should be placed as close
as possible to this input.
Power Supply Input. This pin is the power supply of the device. A 10
mF
or larger ceramic capacit-
or must bypass this input to the ground. This capacitor should be placed as close a possible to
this input.
Exposed Pad. Must be soldered to system ground to achieve power dissipation performances.
This pin is internally unconnected
7
AVIN
8
PVIN
9
PAD
ORDERING INFORMATION
Device
NCV6334BMTAATBG
Marking
AM
Package
WDFN8
(Pb−Free)
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NCV6334B
Vin
Cin
10uF
PVIN
8
SW
2
L
1uH
Cout
10uF
Vo
AVIN
7
UVLO
PWM / PFM
Control
PGND
1
R1
Cfb
FB
4
R2
Enable
Rpg
1M
EN
5
Power Good
MODE/PG
6
MODE
PG
Logic Control
&
Current Limit
&
Thermal
Shutdown
Error
Amp
AGND
3
Reference
Voltage
Figure 2. Functional Block Diagram
MAXIMUM RATINGS
Value
Rating
Input Supply Voltage to GND
Switch Node to GND
EN, PG to GND
FB to GND
Human Body Model (HBM) ESD Rating (Note 1)
Machine Model (MM) ESD Rating (Note 1)
Latchup Current (Note 2)
Operating Junction Temperature Range (Note 3)
Operating Ambient Temperature Range
Storage Temperature Range
Thermal Resistance Junction−to−Top Case (Note 4)
Thermal Resistance Junction−to−Board (Note 4)
Thermal Resistance Junction−to−Ambient (Note 4)
Power Dissipation (Note 5)
Moisture Sensitivity Level (Note 6)
Symbol
V
PVIN
, V
AVIN
V
SW
V
EN
, V
PG
V
FB
ESD HBM
ESD MM
I
LU
T
J
T
A
T
STG
R
qJC
R
qJB
R
qJA
P
D
MSL
−100
−40
−40
−55
12
30
62
1.6
1
Min
−0.3
−0.3
−0.3
−0.3
Max
7.0
7.0
7.0
2.5
2000
200
100
125
85
150
Unit
V
V
V
V
V
V
mA
°C
°C
°C
°C/W
°C/W
°C/W
W
−
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM)
±2.0
kV per JEDEC standard: JESD22−A114.
Machine Model (MM)
±200
V per JEDEC standard: JESD22−A115.
2. Latchup Current per JEDEC standard: JESD78 Class II.
3. The thermal shutdown set to 160°C (typical) avoids potential irreversible damage on the device due to power dissipation.
4. The thermal resistance values are dependent of the PCB heat dissipation. Board used to drive these data was an 80 x 50 mm NCP6334EVB
board. It is a multilayer board with 1 once internal power and ground planes and 2−once copper traces on top and bottom of the board. If
the copper trances of top and bottom are 1 once too, R
qJC
= 11°C/W, R
qJB
= 30°C/W, and R
qJA
= 72°C/W.
5. The maximum power dissipation (PD) is dependent on input voltage, maximum output current and external components selected.
6. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
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NCV6334B
ELECTRICAL CHARACTERISTICS
(V
IN
= 3.6 V, V
OUT
= 1.8 V, L = 1
mH,
C = 10
mF,
typical values are referenced to T
J
= 25°C, Min
and Max values are referenced to T
J
up to 125°C, unless other noted.)
Symbol
SUPPLY VOLTAGE
V
IN
I
Q
I
SD
V
OUT
V
FB
Input Voltage V
IN
Range
V
IN
Quiescent Supply Current
V
IN
Shutdown Current
Output Voltage Range
FB Voltage
FB Voltage in Load Regulation
FB Voltage in Line Regulation
D
MAX
I
OUTMAX
I
LIM
V
INUV−
V
INHYS
V
PGL
V
PGHYS
Maximum Duty Cycle
(Note 10)
2.3
−
5.5
V
Characteristics
Test Conditions
Min
Typ
Max
Unit
SUPPLY CURRENT
EN high, no load, no switching, PFM Mode
EN low
−
−
30
−
−
1
mA
mA
OUTPUT VOLTAGE
(Note 7)
PWM Mode
V
IN
= 3.6 V, I
OUT
from 200 mA to I
OUTMAX
,
PWM mode (Note 7)
I
OUT
= 200 mA, V
IN
from MAX (V
NOM
+
0.5 V, 2.3 V) to 5.5 V, PWM mode (Note 7)
(Note 7)
0.6
594
−
−
−
−
600
−0.5
0
100
V
IN
606
−
−
−
V
mV
%/A
%/V
%
OUTPUT CURRENT
Output Current Capability
Output Peak Current Limit
(Note 7)
2.0
2.3
−
2.8
−
3.3
A
A
VOLTAGE MONITOR
V
IN
UVLO Falling Threshold
V
IN
UVLO Hysteresis
Power Good Low Threshold
Power Good Hysteresis
V
OUT
falls down to cross the threshold
(percentage of FB voltage) (Note 8)
V
OUT
rises up to cross the threshold
(percentage of Power Good Low Threshold
(V
PGL
) voltage) (Note 8)
From EN rising edge to PG going high.
(Note 8)
From EN falling edge to PG going low.
(Notes 7 and 8)
From V
FB
going higher than 95% nominal
level to PG going high.
Not for the first time in start up. (Notes 7
and 8)
From V
FB
going lower than 90% nominal
level to PG going low. (Notes 7 and 8)
Voltage at PG pin with 5 mA sink current
(Note 8)
3.6 V at PG pin when power good valid
(Note 8)
−
60
87
0
−
−
90
3
2.3
200
92
5
V
mV
%
%
Td
PGH1
Td
PGL1
Td
PGH
Power Good High Delay in Start Up
Power Good Low Delay in Shut
Down
Power Good High Delay in Regula-
tion
−
−
−
1.15
8
5
−
−
−
ms
ms
ms
Td
PGL
VPG_L
PG_LK
Power Good Low Delay in Regulation
Power Good Pin Low Voltage
Power Good Pin Leakage Current
−
−
−
8
−
−
−
0.3
100
ms
V
nA
INTEGRATED MOSFETs
R
ON_H
R
ON_L
High−Side MOSFET ON Resistance
Low−Side MOSFET ON Resistance
V
IN
= 3.6 V (Note 9)
V
IN
= 5 V (Note 9)
V
IN
= 3.6 V (Note 9)
V
IN
= 5 V (Note 9)
−
−
140
130
110
100
200
−
140
−
mW
mW
7. Guaranteed by design, not tested in production.
8. Power Good function is for NCV6334B devices only.
9. Maximum value applies for T
J
= 85°C.
10. Operation above 5.5 V input voltage for extended periods may affect device reliability.
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4
NCV6334B
ELECTRICAL CHARACTERISTICS
(V
IN
= 3.6 V, V
OUT
= 1.8 V, L = 1
mH,
C = 10
mF,
typical values are referenced to T
J
= 25°C, Min
and Max values are referenced to T
J
up to 125°C, unless other noted.)
Symbol
Characteristics
Test Conditions
Min
Typ
Max
Unit
SWITCHING FREQUENCY
F
SW
T
SS
Normal Operation Frequency
2.7
3.0
3.3
MHz
SOFT START
Soft−Start Time
Time from EN to 90% of output voltage
target
−
0.4
1
ms
CONTROL LOGIC
V
EN_H
V
EN_L
V
EN_HYS
I
EN_BIAS
R_DIS
EN Input High Voltage
EN Input Low Voltage
EN Input Hysteresis
EN Input Bias Current
1.1
−
−
−
−
270
0.1
−
0.4
−
1
V
V
mV
mA
OUTPUT ACTIVE DISCHARGE
Internal Output Discharge Resistance
from SW to PGND
75
500
700
W
THERMAL SHUTDOWN
T
SD
T
SD_HYS
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
−
−
160
25
−
−
°C
°C
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