TSD2444
Low Vce(sat) NPN Transistor
Pin assignment:
1. Base
2. Emitter
3. Collector
BV
CEO
= 20V
Ic = 1A
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSD2444CX
Packing
Tape & Reel
Package
SOT-23
Structure
Epitaxial planar type.
Complementary to TSB1590CX
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 10mS
DC
Pulse
P
D
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
20V
5
1
1.5 (note 1)
0.225
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 500mA / 50mA
V
CE
= 2V, I
C
= 0.1A
V
CE
= 5V, I
C
= 50mA,
f = 100MHz
V
CB
= 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
40
20
5
--
--
--
82
--
--
Typ
--
--
--
--
--
0.2
--
150
15
Max
--
--
--
0.5
0.5
0.4
390
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
Range
P
82 - 180
Q
120 - 270
R
180 - 390
TSD2444
1-3
2003/12 rev. A
测试/测量
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