®
SD2931-10
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
ADVANCE DATA
½
½
½
½
½
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 150W MIN. WITH 14 dB gain @175
MHz
THERMALLY ENHANCED PACKAGING FOR
LOWER JUNCTION TEMPERATURES
M174
epoxy sealed
ORDER CODE
BRANDING
SD2931-10
TSD2931-10
DESCRIPTION
The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications.
PIN CONNECTION
1. Drain
2. Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1MΩ)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
Value
125
125
±20
20
389
200
-65 to 150
3.Gate
4. Source
Uni t
V
V
V
A
W
o
o
C
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
∗
0.45
0.2
o
o
C/W
C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
1/10
SD2931-10
ELECTRICAL SPECIFICATION
(T
case
= 25
o
C)
STATIC
Symb ol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
G
FS
C
ISS
C
OSS
C
RSS
*
Parameter
V
GS
= 0V
V
GS
= 0V
V
GS
= 20V
VDS = 10V
V
GS
= 10V
V
DS
= 10V
V
GS
= 0V
V
GS
= 0V
V
GS
= 0V
I
DS
= 100 mA
V
DS
= 50 V
V
DS
= 0 V
I
D
= 250 mA
I
D
= 10 A
I
D
= 5 A
V
DS
= 50 V
V
DS
= 50 V
V
DS
= 50 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min.
125
Typ .
Max.
5
5
Un it
V
mA
µA
V
V
mho
2.0
5
480
190
18
5.0
3.0
V
DS( ON)
pF
pF
pF
REF. 7165489C
* V
GS(Q)
sorted with alpha/numeric code marked on unit.
DYNAMIC
Symb ol
P
OUT
G
PS
η
D
f = 175 MHz
f = 175 MHz
f = 175 MHz
Parameter
V
DD
= 50 V
V
DD
= 50 V
V
DD
= 50 V
I
DQ
= 250 mA
P
ou t
= 150 W
P
ou t
= 150 W
P
ou t
= 150 W
I
DQ
= 250 mA
I
DQ
= 250 mA
I
DQ
= 250 mA
Min.
150
14
55
10:1
15
65
Typ .
Max.
Un it
W
dB
%
VSW R
Load
f = 175 MHz V
DD
= 50 V
Mismatch All Phase Angles
IMPEDANCE DATA
V
GS
SORTS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
2.0 - 2.1
2.1 - 2.2
2.2 - 2.3
2.3 - 2.4
2.4 - 2.5
2.5 - 2.6
2.6 - 2.7
2.7 - 2.8
2.8 - 2.9
2.9 - 3.0
3.0 - 3.1
3.1 - 3.2
3.2 - 3.3
3.3 - 3.4
3.4 - 3.5
R
S
T
U
V
W
X
Y
Z
2
3
4
5
6
7
3.5 - 3.6
3.6 - 3.7
3.7 - 3.8
3.8 - 3.9
3.9 - 4.0
4.0 - 4.1
4.1 - 4.2
4.2 - 4.3
4.3 - 4.4
4.4 - 4.5
4.5 - 4.6
4.6 - 4.7
4.7 - 4.8
4.8 - 4.9
4.9 - 5.0
F REQ .
30 MHz
175 MHz
Z
IN
(Ω)
1.7 - j 5.7
1.2 - j 2.0
Z
DL
(Ω)
6.8 + j 0.9
2.0 + j 2.4
2/10
SD2931-10
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
10000
Drain Current vs Gate Voltage
20
Tc=-20
°C
ID, DRAIN CURRENT (A)
Tc=+25
°C
C, CAPACITANCE (pF)
15
1000
f =1MHz
Ciss
10
Tc=+80
°C
Coss
100
5
Crss
10
0
10
20
30
40
50
0
2
2.5
3
3.5
4
4.5
5
5.5
6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Gate-Source Voltages vs Case Temperature
Maximum Thermal Resistance vs Case
Temperature
0.6
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.1
Id =9A
Id =7A
1.05
Id =11A
Id =10A
1
RTH(j-c) (°C/W)
Id =5A
0.56
0.52
0.95
Id =4A
Id =2A
0.9
Id =.25A
Id =1A
0.48
0.85
Id =.1A
0.44
25
35
45
55
65
75
85
100
0.8
-25
0
25
50
75
Tc, CASE TEMPERATURE (°C)
Tc, CASE TEMPERATURE (°C)
DC Safe Operating Area
100
Ids(A)
10
(1)
1
1
10
100
1000
Vds(V)
(1) Current in this area may be limited by R
ds(on)
3/10
SD2931-10
TYPICAL PERFORMANCE (175 MHz)
Output Power vs Input Power
250
Pout =50V
Output Power vs Input Power
270
240
Tc=-20
°C
Tc =+25
°C
Pout, OUTPUT POWER(W)
Pout, OUTPUT POWER (W)
200
Pout =40V
210
180
150
100
50
0
0
5
10
15
20
25
f=175Mhz
Idq=250mA
Tc =+80
°C
150
120
90
60
30
0
0
5
10
15
20
25
Vdd=50V
Id q=250mA
f=175Mhz
Pin, INPUT POWER(W)
Pin, INPUT POWER(W)
Power Gain vs Output Power
15
Efficency vs Output Power
70
Nc, EFFICIENCY (%)
Gp, POWER GAIN (dB)
14
60
13
50
12
Vdd=50V
Idq=250mA
f=175Mhz
40
11
Vdd=50V
Idq=250mA
f=175Mhz
30
10
0
50
100
150
200
250
0
50
100
150
200
250
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs Supply Voltage
250
Pin =10W
Output Power vs Gate Voltage
Pout, OUTPUT POWER (W)
200
Tc =+25
°C
Tc =-20
°C
Pout,Output Power(W)
200
Pin =5W
150
Tc =+80
°C
150
Pin =2.5W
100
100
50
50
Idq=250mA
f=175Mhz
0
24
28
32
36
40
44
48
52
0
-3
-2
-1
0
1
2
3
Vdd,Drain Voltage(V)
VGS, GATE-SOURCE VOLTAGE(V)
4/10
SD2931-10
175 MHz Test Circuit Schematic (Production Test Circuit)
V
G
+50V
Note : All dimensions in inches
REF. 1021579C
175 MHz Test Circuit Component Part List
T1
T2
FB1
FB2, FB3
FB4
L1
PCB
R1, R3
R2
C1, C11
C2
C3, C8, C9
C4
C5
C6
4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 ” Long
1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 ” Long
Toroid X 2, 0.5” OD .312” ID 850u 2 Turns
VK200
Shield Bead, 1” OD 0.5” ID 850u 3 Turns
1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 ” Long
0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55
470 ohm 1W Chip Resistor
R4
20K ohm 10 Turn Potentiometer
360 ohm 1/2W Resistor
R5
560 ohm 1W Resistor
470 pF ATC Chip Cap
C7
30 pF ATC Chip Cap
43 pF ATC Chip Cap
C10
91 pF ATC Chip Cap
Arco 404, 12-65 pF
C12, C15
1200 pF ATC Chip Cap
Arco 423, 16-100 pF
C13, C14
0.01 uF / 500V Chip Cap
120 pF ATC Chip Cap
C16, C17
0.01 uF / 500V Chip Cap
0.01 uF ATC Chip Cap
C18
10 uF 63V Electrolytic Capacitor
5/10
stm32/stm8
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