SD57045-01
RF POWER TRANSISTORS
The
LdmoST
FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
•
EXCELLENT THERMAL STABILITY
•
COMMON SOURCE CONFIGURATION
•
P
OUT
= 45W WITH 13 dB gain @ 945 MHz
•
BeO FREE PACKAGE
M250
epoxy sealed
ORDER CODE
SD57045-01
BRANDING
SD57045-01
DESCRIPTION
The SD57045-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57045-01 is designed for high gain
and broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 MΩ)
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
65
±
20
5
93
200
-65 to + 200
Unit
V
V
V
A
W
°C
°C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.4
°C/W
1/11
November, 19 2002
SD57045-01
ELECTRICAL SPECIFICATION
(T
CASE
= 25
°
C)
STATIC
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 28 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
Test Conditions
I
DS
= 1 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 250 mA
I
D
= 3 A
I
D
= 5 A
V
DS
= 28 V
V
DS
= 28 V
V
DS
= 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
2.0
2.5
0.7
2.7
80
40
3.2
Min.
65
1
1
5.0
0.9
Typ.
Max.
Unit
V
µA
µA
V
V
mho
pF
pF
pF
Ref. 7133620B
DYNAMIC
Symbol
P
OUT
IMD3
G
PS
η
D
Load
mismatch
note: f
1
= 945 MHz
PEP f
2
= 945.1 MHz
Test Conditions
V
DD
= 28 V
V
DD
= 28 V
V
DD
= 28 V
V
DD
= 28 V
I
DQ
= 250 mA
I
DQ
= 250 mA
I
DQ
= 250 mA
I
DQ
= 250 mA
f = 945 MHz
P
OUT
= 45 W PEP
P
OUT
= 45 W PEP
P
OUT
= 45 W PEP
P
OUT
= 45 W
f = 945 MHz
Min.
45
Typ.
Max.
Unit
W
-32
13
33
10:1
15
40
-28
dBc
dB
%
VSWR
V
DD
= 28 V I
DQ
= 250 mA
ALL PHASE ANGLES
IMPEDANCE DATA
D
Z
D
Typical
Input
G
Zin
Typical Drain
S
FREQ.
925 MHz
930 MHz
945 MHz
960 MHz
965 MHz
2/11
Z
IN
(Ω)
1.27 + j 0.82
1.21 + j 0.79
1.04 + j 0.71
0.93 + j 0.43
0.91 + j 0.41
Z
DL
(Ω)
2.22 - j 1.63
2.24 - j 1.61
2.30 - j 1.52
2.37 - j 1.37
2.43 - j 1.36
SD57045-01
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
C (pF)
1000
Gate-Source Voltage vs. Case Temperature
VGS (NORMALIZED)
1.04
f = 1 MHz
1.02
100
Ciss
I
D
= 3A
1
Coss
I
D
= 2A
I
D
= 1.5 A
10
0.98
Crss
V
DS
= 10 V
I
D
= 250 mA
ID
= 1A
1
0
10
20
30
40
50
0.96
-25
0
25
50
75
Vds (V)
Tcase (°C)
Drain Current vs. Gate Voltage
Id (A)
4
Safe Operating Area
Y-Axis
10
3.5
Tc = 25 C
o
3
Tc = 70 C
o
2.5
Tc = 100 C
o
2
1
1.5
1
V
DS
= 10 V
0.5
0
2.5
3
3.5
4
4.5
5
0.1
1
10
100
Vgs (V)
X-Axis
3/11
SD57045-01
TYPICAL PERFORMANCE (CW)
Output Power and Power Gain vs. Input Power
Pout (W)
70
Gp
Power Gain vs. Output Power
Gp (dB)
20
Gp (dB)
18
60
16
18
Idq = 450 mA
50
14
16
Idq = 250 mA
40
12
14
Idq = 150 mA
30
Pout
10
12
Idq = 75 mA
20
V
DD
= 28 V
I
DQ
= 250 mA
f = 945 MHz
8
10
10
6
8
Vdd = 28 V
f = 945 Mhz
0
0
0.5
1
1.5
2
2.5
3
4
6
0.1
1
10
100
Pin (W)
Pout (W)
Efficiency vs. Output Power
Nc (%)
60
Broadband Power Performance
Gp, GAIN (dB)
16
RTL (dB)
20
15
50
14
40
13
30
GAIN
18
16
14
12
RETURN LOSS
12
11
20
10
10
Freq = 945 Mhz
V
DD
= 28 V
I
DQ
= 250mA
10
8
9
6
0
0
10
20
30
40
50
60
8
925
930
935
940
945
950
955
960
965
4
Pout (W)
f, FREQUENCY (MHz)
Output Power vs. Drain Voltage
Pout (W)
90
Vdd = 28 V
Idq = 250 mA
f = 945 MHz
Output Power vs Gate Biat Voltage
Pout (W)
60
80
50
Pin =3 W
70
40
60
Pin = 2 W
50
30
40
Pin = 1 W
20
30
10
20
0
12
16
20
24
28
32
36
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DD
= 28 V
Pin = 1.5 W
f = 945 MHz
10
Vds (V)
VGS (V)
4/11
SD57045-01
TYPICAL PERFORMANCE (PEP)
Output Power vs. Input Power
Pout (W)
60
Power Gain vs. Input Power
Gp (dB)
18
50
17
40
16
30
15
20
14
10
V
DD
= 28 V
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
13
V
DD
= 28 V
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
0
0
0.5
1
1.5
2
12
0
10
20
30
40
50
60
70
Pin (W)
Pin (W)
Efficiency vs. Output Power (PeP)
Nd (%)
60
Intermodulation Distortion vs. Output Power
IMD (dBc)
0
-5
-10
V
DD
= 28 V
I
DQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
50
-15
-20
40
-25
-30
-35
IMD3
30
-40
-45
-50
IMD5
20
-55
-60
IMD7
f1 = 945 Mhz
f2 = 945.1 Mhz
V
DD
= 28 V
I
DQ
= 250mA
10
-65
-70
-75
-80
60
0
0
10
20
30
40
50
0
10
20
30
40
50
60
Pout (WPEP)
Pout (WPEP)
Intermodulation Distortion vs. Output Power
IMD3 (dBc)
0
Case A Third Order Intercept Point
Pout (dBm)
70
60
-10
50
Fundamental
-20
Idq
=
75 mA
40
30
20
-30
Idq = 150 mA
-40
Idq = 450 mA
10
IMD3
-50
Idq = 250 mA
0
-10
-60
V
DD
= 28 V
f1 = 945 Mhz
f2 = 945.1 Mhz
-20
-30
-40
-70
V
DS
= 26 V
I
D
= 1.8 A
f1 = 945 MHz
f2 = 945.1 MHz
-80
0.1
1
10
100
10
15
20
25
30
35
40
45
Pout (W)
Pin (dBm)
5/11
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
