®
SD57060
RF POWER TRANSISTORS
The
LdmoST
FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s
s
s
s
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 60 W with 11.5 dB gain @ 945 MHz
BeO FREE PACKAGE
M243
epoxy sealed
ORDER CODE
BRANDING
SD57060
TSD57060
DESCRIPTION
The SD57060 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for base
station applications requiring high linearity.
PIN CONNECTION
1. Drain
2. Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70 C)
Max. O perating Junction Temperature
Storage T emperature
o
3.Source
Value
65
±
20
7
108
200
-65 to 150
Uni t
V
V
A
W
o
o
C
C
THERMAL DATA
(T
case
= 70
o
C)
R
th (j-c)
R
th(c -s)*
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resistance
1.2
0.45
o
o
C/W
C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
January 2000
1/8
SD57060
TYPICAL PERFORMANCE
Output Power and Power Gain vs Input Power
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Efficiency vs Output Power
Output Power vs Drain-Source Voltage
Intermodulation Distorsion vs Output Power
3/8
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