MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
35 to 60 V
Forward Current
30 A
Dual High-Voltage Schottky Rectifiers
ITO-220AB (MBRF30HxxCT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
TO-220AB (MBR30HxxCT)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
0.160 (4.06)
0.140 (3.56)
PIN
2
3
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
1
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
PIN
2
3
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 3
PIN 2
1.148 (29.16)
1.118 (28.40)
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 3
PIN 2
CASE
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-263AB (MBRB30HxxCT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
0.624 (15.85)
1
K
2
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
PIN 1
PIN 2
K - HEATSINK
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.360 (9.14)
0.320 (8.13)
0.33
(8.38)
0.63
(17.02)
Dimensions in inches
and (millimeters)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.08
(2.032)
0.24
(6.096)
0.095 (2.41)
0.12
(3.05)
0.205 (5.20)
0.195 (4.95)
Features
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-263AB molded
plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
Document Number 88866
7-Feb-03
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
www.vishay.com
1
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25 °C unless otherwise noted)
Symbol
MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
V
RRM
V
RWM
V
DC
Total device
Per leg
I
F(AV)
I
FRM
E
AS
I
FSM
I
RRM
E
RSM
V
C
dv/dt
T
J
T
STG
V
ISOL
1.0
25
25
10,000
–65 to +175
–65 to +175
4500
(1)
3500
(2)
1500
(3)
35
35
35
45
45
45
30
15
30
80
150
0.5
20
50
50
50
60
60
60
Unit
V
V
V
A
A
mJ
A
A
mJ
kV
V/µs
°C
°C
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current
(see fig. 1)
Peak repetitive forward current at T
C
= 150 °C
(rated V
R
, 20 KHz sq. wave)
Non-repetitive avalanche energy per leg
at 25
°C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse surge current per leg
at t
p
= 2.0
µs,
1 KH
Z
Peak non-repetitive reverse energy (8/20
µs
waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
Electrical Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg
(4)
at
at
at
at
I
F
=
I
F
=
I
F
=
I
F
=
15
15
30
30
A
A
A
A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
T
J
= 25 °C
T
J
=125 °C
Symbol
MBR30H35CT, MBR30H45CT MBR30H50CT, MBR30H60CT
Typ
V
F
–
0.49
–
0.62
–
5.0
Max
0.62
0.56
0.73
0.67
80
15
Typ
–
0.55
–
0.68
–
4.0
Max
0.68
0.59
0.83
0.71
60
15
V
µA
mA
Unit
Maximum instantaneous reverse current
at rated DC blocking voltage per leg
(4)
I
R
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Thermal resistance from junction to case per leg
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
Symbol
R
θJC
MBR
1.5
MBRF
4.5
MBRB
1.5
Unit
°C/W
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300
µs
pulse width, 1% duty cycle
Ordering Information
Product
MBR30H35CT – MBR30H60CT
MBRF30H35CT – MBRF30H60CT
MBRB30H35CT – MBRB30H60CT
Case
TO-220AB
ITO-220AB
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
Document Number 88866
7-Feb-03
www.vishay.com
2
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
40
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
150
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
MBR, MBRB
30
125
100
75
50
20
MBRF
10
25
0
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Instantaneous Reverse Leakage Current
(mA)
100
100
Fig. 4 – Typical Reverse
Characteristics Per Leg
Instantaneous Forward Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
T
J
= 125°C
10
T
J
= 150°C
T
J
= 125°C
1
0.1
0.01
0.1
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
T
J
= 25°C
0.001
0.01
0.0001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
10000
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
10
1000
Transeint Thermal Impedance (°C/W)
100
pF - Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
1
MBR30H35CT -- MBR30H45CT
MBR30H50CT -- MBR30H60CT
100
0.1
1
10
0.1
0.01
0.1
1
10
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
3
Document Number 88866
7-Feb-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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