TRANSISTOR 1.2 A, 800 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | SFM |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
外壳连接 | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 800 V |
最大漏极电流 (ID) | 1.2 A |
最大漏源导通电阻 | 8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 4.8 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
BUK444-800B127 | BUK444-800A | BUK444-800B | BUK444-800A127 | BUK444-800B,127 | |
---|---|---|---|---|---|
描述 | TRANSISTOR 1.2 A, 800 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | TRANSISTOR 1.4 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power | TRANSISTOR 1.2 A, 800 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power | TRANSISTOR 1.4 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | 1.2A, 800V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 800 V | 800 V | 800 V | 800 V | 800 V |
最大漏极电流 (ID) | 1.2 A | 1.4 A | 1.2 A | 1.4 A | 1.2 A |
最大漏源导通电阻 | 8 Ω | 6 Ω | 8 Ω | 6 Ω | 8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 4.8 A | 5.6 A | 4.8 A | 5.6 A | 4.8 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
零件包装代码 | SFM | SFM | SFM | SFM | - |
针数 | 3 | 3 | 3 | 3 | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved