MAX8561ETA
Rev. A
RELIABILITY REPORT
FOR
MAX8561ETA
PLASTIC ENCAPSULATED DEVICES
September 24, 2003
MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR.
SUNNYVALE, CA 94086
Written by
Reviewed by
Jim Pedicord
Quality Assurance
Reliability Lab Manager
Bryan J. Preeshl
Quality Assurance
Executive Director
Conclusion
The MAX8561 successfully meets the quality and reliability standards required of all Maxim products. In addition,
Maxim’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim’s quality
and reliability standards.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. .......Packaging Information
V. ........Quality Assurance Information
VI. .......Reliability Evaluation
IV. .......Die Information
.....Attachments
I. Device Description
A. General
The MAX8561 step-down dc-dc converter is optimized for applications that prioritize small size and high efficiency. It
utilizes a proprietary hysteretic-PWM control scheme that switches with fixed frequency and is adjustable up to
4MHz, allowing customers to trade efficiency for smaller external components. Output current is guaranteed up to
500mA, while quiescent current is only 40µA (typ).
Internal synchronous rectification greatly improves efficiency and eliminates the external Schottky diode required in
conventional step-down converters. Built-in soft-start eliminates inrush current to reduce input capacitor
requirements. The MAX8561 features logic-controlled output voltage.
The MAX8561 is available in space-saving 8-pin 3mm x 3mm Thin DFN packages.
B. Absolute Maximum Ratings
Item
IN, FB, SHDN, ODI, ODO to GND
LX to GND (Note 1)
PGND to GND
LX Current
Output Short Circuit to GND (typical operating circuit)
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
Continuous Power Dissipation (TA = +70°C)
8-Pin Thin DFN (3 x 3)
Derates above +70°C
8-Pin Thin DFN (3 x 3)
Rating
-0.3V to +6V
-0.3V to (VIN + 0.3V)
-0.3V to +0.3V
1.27A
10s
-40°C to +85°C
+150°C
-65°C to +150°C
+300°C
1951mW
24.4mW/°C
Note 1:
LX has internal clamp diodes to PGND and IN. Applications that forward bias these diodes should take care
not to exceed the IC’s package power-dissipation limits.
II. Manufacturing Information
A. Description/Function: 4MHz, 500mA Synchronous Step-Down DC-DC Converters in SOT and TDFN
B. Process:
C. Number of Device Transistors:
D. Fabrication Location:
E. Assembly Location:
F. Date of Initial Production:
B8 (Standard 0.8 micron silicon gate CMOS)
1271
California, USA
Thailand
July, 200
III. Packaging Information
A. Package Type:
B. Lead Frame:
C. Lead Finish:
D. Die Attach:
E. Bondwire:
F. Mold Material:
G. Assembly Diagram:
H. Flammability Rating:
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-112:
8-Pin Thin DFN
Copper
Solder Plate
Silver-Filled Epxoy
Gold (1.3 mil dia.)
Epoxy with silica filler
# 05-9000-0685
Class UL94-V0
Level 1
IV. Die Information
A. Dimensions:
B. Passivation:
C. Interconnect:
D. Backside Metallization:
E. Minimum Metal Width:
F. Minimum Metal Spacing:
G. Bondpad Dimensions:
H. Isolation Dielectric:
I. Die Separation Method:
40 x 59 mils
Si
3
N
4
/SiO
2
(Silicon nitride/ Silicon dioxide)
Aluminum/Si (Si = 1%)
None
0.8 microns (as drawn)
0.8 microns (as drawn)
5 mil. Sq.
SiO
2
Wafer Saw
V. Quality Assurance Information
A. Quality Assurance Contacts:
Jim Pedicord (Manager, Reliability Operations)
Bryan Preeshl (Executive Director)
Kenneth Huening (Vice President)
0.1% for all electrical parameters guaranteed by the Datasheet.
0.1% For all Visual Defects.
B. Outgoing Inspection Level:
C. Observed Outgoing Defect Rate: < 50 ppm
D. Sampling Plan: Mil-Std-105D
VI. Reliability Evaluation
A. Accelerated Life Test
B.
The results of the 135°C biased (static) life test are shown in
Table 1.
Using these results, the Failure
Rate (λ) is calculated as follows:
λ
=
1
=
MTTF
1.83
192 x 4389 x 48 x 2
(Chi square value for MTTF upper limit)
Temperature Acceleration factor assuming an activation energy of 0.8eV
λ
= 22.62 x 10
-9
λ
= 22.62 F.I.T. (60% confidence level @ 25°C)
This low failure rate represents data collected from Maxim’s reliability monitor program. In addition to
routine production Burn-In, Maxim pulls a sample from every fabrication process three times per week and subjects
it to an extended Burn-In prior to shipment to ensure its reliability. The reliability control level for each lot to be
shipped as standard product is 59 F.I.T. at a 60% confidence level, which equates to 3 failures in an 80 piece
sample. Maxim performs failure analysis on any lot that exceeds this reliability control level. Attached Burn-In
Schematic (Spec. # 06-6205) shows the static Burn-In circuit. Maxim also performs quarterly 1000 hour life test
monitors. This data is published in the Product Reliability Report (RR-1M).
B. Moisture Resistance Tests
Maxim pulls pressure pot samples from every assembly process three times per week. Each lot sample
must meet an LTPD = 20 or less before shipment as standard product. Additionally, the industry standard
85°C/85%RH testing is done per generic device/package family once a quarter.
C. E.S.D. and Latch-Up Testing
The PN18-1 die type has been found to have all pins able to withstand a transient pulse of
±1000V,
per Mil-
Std-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device
withstands a current of
±250mA.
Table 1
Reliability Evaluation Test Results
MAX8561ETA
TEST ITEM
TEST CONDITION
FAILURE
IDENTIFICATION
SAMPLE
SIZE
NUMBER OF
FAILURES
PACKAGE
Static Life Test
(Note 1)
Ta = 135°C
Biased
Time = 192 hrs.
Moisture Testing
(Note 2)
Pressure Pot
Ta = 121°C
P = 15 psi.
RH= 100%
Time = 168hrs.
Ta = 85°C
RH = 85%
Biased
Time = 1000hrs.
DC Parameters
& functionality
48
0
DC Parameters
& functionality
QFN
77
0
85/85
DC Parameters
& functionality
77
0
Mechanical Stress
(Note 2)
Temperature
Cycle
-65°C/150°C
1000 Cycles
Method 1010
DC Parameters
& functionality
77
0
Note 1: Life Test Data may represent plastic DIP qualification lots.
Note 2: Generic Package/Process data
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