MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
FEATURES
0.50 dB Minimum Noise Figure at 12 GHz
8.0 dB Associated Gain at 12 GHz
20.0 dBm P1dB at 12 GHz
0.15 Micron x 600 Micron Gate
APPLICATIONS
Excellent Choice for Super Low Noise Applications
Ideal for Commercial, Military, Hi-Rel Space Applications
DESCRIPTION
The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and
600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20
GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be
screened to meet quality and reliability requirements of space and military applications.
RF SPECIFICATIONS AT Ta = 25 C
S YM BOL
NF m in
SSG
P 1dB
P ARAM ETERS & CONDITIONS
M inim um Nois e Figure
V ds= 2.5V Ids = 40 m A (V gs = 0)
A s soc iated Gain
V ds= 2.5V Ids = 40 m A (V gs = 0)
Output P ower at 1dB Com pres s ion
V ds= 3.0V Ids = 100 m A
FREQ
4 GHz
12 GHz
4 GHz
12 GHz
12 GHz
UNITS
dB
dB
dB m
11.0
8.0
M IN
TYP
0.2
0.5
12.0
9.0
20.0
M AX
Note: MWT-LN600 is a quas i enhanc ement mode dev ic e. For bes t nois e f igure, V gs bias v oltage s hould be s et at
either 0 or s lightly pos itiv e v oltages to ac hiev e the target operating c urrent.
DC SPECIFICATIONS AT Ta = 25 C
S YM BOL
Im a x
Gm
Vp
BV GS O
BV GDO
Rth *
P ARAM ETERS & CONDITIONS
M axim um Current
V ds = 2.5V V gs = 0.6V
Trans c onduc tanc e
V ds = 2.5V V gs = 0.2V
P inch-off V oltage
V ds = 2.0V Ids = 1.0m A
Gate-to-S ourc e B reakdown V oltage
Igs = -0.6m A
Gate-to-Drain B reak down V oltage
Igd = -0.6m A
Chip Therm al Res is tanc e
FREQ
UNITS
mA
mS
V
V
V
ºC/W
-6.0
-7.5
M IN
150
300
TYP
175
400
-0.2
-8.0
-9.0
85
M AX
250
* Ov erall Rth depends on c hip mounting
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
NOISE PARAMETERS Vds=2.5V, Ids=50mA
S-PARAMETERS Vds=2.5V, Ids=50mA
Gold Block
10X10X5
2 places
Chip Dimensions: 490 x 430 microns
Source pad: 100 x 300
Gate and Drain pad: 80 x 90
Chip Thickness: 100 microns
RECOMMENDED ASSEMBLY CONFIGURATION
Bond Wire
1.0 mil die
10 places
Note: The gold blocks and circuits should be
placed as close to the device as possible. The
bond wire should be as short as possible.
MAXIMUM RATINGS at Ta = 25 C
Sym bol
VDS
Tch
Tst
Pin
Param eters
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Pow er
Units
V
ºC
ºC
mW
Cont
Max 1
4.5
+150
-65 to +160
30
Absolute
Max 2
5.5
+175
+180
50
Pt
Total Pow er Dissipation
mW
500
600
Exceeding any on of these limits in continuous operation may reduce the
mean-time-to-failure below the design goal and may cause permanent damage
4268 Solar Way
Fremont, CA 94538
sales@mwtinc.com
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com
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