DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-1000-1C
ABDB-1000-1C
10 AMP SILICON BRIDGE RECTIFIERS
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE
DT
DB1004
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 400 AMPS PEAK
SERIES DB1000-DB1010 and ADB1004-ADB1008
BH
UL RECOGNIZED - FILE #E124962
RoHS COMPLIANT
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
SYM
BL
BH
D1
LL
MILLIMETERS
MIN
18.5
6.4
12.2
MAX
19.6
7.6
13.2
22.2
1.2
n/a
1.3
LD
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
0 ¨
B 6 §A @¢ ¤ '§ ¢ ¡ ) 2 ¦ ) ¡ # ! £4 £¢ ' ¡ ¡ ' # 9
"
0 ) ¡ # ! £4 ¢ ' ) £¤ § £4 ¢ £¦ ¦ 2 8 7 6 5 2 4 ¡3% "( ¡ $ 2 ¦ ¡ $ " ¥ £¤ 1
"
#
0 ) £ £( ' § ¦ £& % $ ¢ §¦ ¦ " ¤ ! ¢ ¡ ¢ ¢ ¤ £ §© ¨ ¢ §¦ ¥ £¤ ¢ ¡
¦
#
¡ ¡
Series Number
c
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
RMS Reverse Voltage
Power Dissipation in V
hif
g
V
V
Thermal Energy (Rating for Fusing)
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). TJ = 125 C
@ T = 50 C (Notes 1, 3)
Average Forward Rectified Current
@ T = 50 C (Note 2)
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
Maximum Avalanche Voltage
Maximum Forward Voltage (Per Diode) at 5 Amps DC
C
It
AMPS
SEC
V
I
Typical Thermal Resistance
E33
o
npq o n lm
h
Junction to Ambient (Note 2)
Junction to Case (Note 1)
R
R
«'Ç ¨vµº ¨'¼¶µ¥¸'1º¸ ¿·¸''º ¹¥¸ ¨º ¿'Ì£G¦¶1Ã'º¸ ¹½£ §µ À §'µ'·¡¥®v¸ ¹ §Ç ¯v¸ ¼ §¶ vº §µ ¿'º Ƕ'ÎÀ ¥¡'1'¸ ½1¥ §µ v §® '¸ vº '¥©'º 'ºv¥'© ¨¨ ½ v£v §» ½¥¸'v¸'© Ë'´ °Ê
®
®
Æ ¾¼ ¾ ¶ ¼ »
¸ ® º
¹ ¨ ·· ¹
Í «¼ ¦¶»Ãº ¹ ¨º ¨ ¹ ¨µ ¹º©µ ¸ µ¼ ¿ ̺ ¸ § §©É¸ ®¸¾ ¹ ®
« '¸ Àv'¼'º ¹ ¨v¸ dz É1³¹ ¶ À¡µº À Ç' §¼ ¨¼¼'º¡ §» ¹¸G¦ v'È'³ ¶1'³ ''© ¥¼ ¿§µ '¼ 'Ç¥v¸ ¹'¡'¥© ¨ ¡C¼ v'¥ §» ½ ¿¨ I´'Á °
¹ ®
¨º © ³ § º
¸ ¹ ® ¾ Ƕ ³ » ¸¾ ½ ¼¸ ¨¸½ »¼Ç¶· µ¿º ¹¸ ¨ ¶ §® ¾ §® Æ ¦ µ® ÅÄ § ¦ à §®¨º¸© ¼¶ ¸¾ ¹ ¶ Â
®»º· ¹¸··¶µ «¯® ³² «¯® «ª § ¡
~
| ¤ À¶ ¼ ¿ ¿ ¸ ¹½
' ' ¥v ' '© ¨¾''¸ »º¸ £¾ §» »¼º£v'''´ '³'± °v'¬ '© ¨ ¡¦ 'I£¢ ¥ e~' |
v
'' £' '1
'1} ¡' } '£ ¥1} '£ ¥ e~v} vCIv
~
} | }
|{ zy x w
54
'13
20
1)
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
VOLTS
C/W
e
x
w
Maximum Reverse Current at Rated V
@ T = 25 C
@T = 100 C
k
j
i
gggf
d
Ie E I
76
ut s r q
vGep i
V
W V U T S
QS IGES CR
h ¡f eb a
g d c
V
`Y X
@9 8
Y Q W U R Q
!XVT SQ P
P H F D B
QB IGEB CA
H F
GE
T ,T
I
I
D
(
&
'%
I
AMPS
°C
VOLTS
A
©
¨
v
P
º ¸
¹
¦
Continuous Power Dissipation in V
@ T =80 C (Heat Sink Temp)
Region
u
ct
Region for 100 S Square Wave
d b
eca `
P
· µ
¶
´ ´
³
y x w
cv Sv
V
Þ
eXÛ Ú
Ý Ü
ÖGÕ
Ö
Ù Ø
G×
G±¿GÍËȤ¡G¿G»
Ô Ó Ò
Ñ Ð Ï
Î Ì Ê
É Ç
Æ Å
Ä Ã Â
Á À ¾
½ ¼
u t
cct
V
§c§G§G§!G§eG§
G§!G§{G§w
~ } | | z y x x
rnomlieee
s q
p
k
j
h g
f d
G§
²G±®G¡¡G§§¤¡
² °
¯ ¯
¬ ¬ «
ª ª ©
¨ ¨ ¦
¥ £
¢ ¢
û ú ù ù
éecâó
¤ ¢
øÿ ü ò þ ü ½ å
¥£¡
eXü ò
÷ ö
ô
ó
õ
ó
ò
ñ ï î í ê ì ê ë
ðåeXê
è ç æ æ ä ã á
éecâàåXâàß
PARAMETER (TEST CONDITIONS)
SYMBOL
s
Cr
u
Ct
_
+
LL
LD
D1
INCHES
+
D1
_
BL
MIN
0.73
0.25
0.48
MAX
0.77
0.3
0.52
0.875
0.048
n/a
0.052
BL
RATINGS
UNITS
VOLTS
r q
sp
WATTS
§
y
$
"
#
!
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-1000-2C
ABDB-1000-2C
10 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB1000 - DB1010 and SERIES ADB1004 - ADB1008
12
400
Resistive and Inductive Loads
Average Forward Current, Io
(Amperes)
10
350
Peak Forward Surge Current
(Amperes)
Case
8
300
Ambient
6
250
200
4
150
2
100
NOTE 2
0
0
50
100
150
50
1
10
100
Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
Amperes
1.0
NOTE 3
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
© ©
¤¨
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Capacitance, pF
(1) Case Temperature, T With Bridge Mounted on
5.1" x 4.3" x 0.11" Thick (12.9cm x 10.8cm x 0.3cm)
Aluminum Plate
Ambient Temperature, T With Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
(2) T = 125 C
(3) T = 25 C; Pulse Width = 300
m
Sec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
¢ ¢
¤£¡
E34
Ò
ÑÓÔ vÒ Ñ ÏÐ
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
NOTE 4
NOTES
Ù'ØÖ
×
êéç
1èvæ1åãâ
æ ä
ávà
ßÝ
'ÞÜÛ
Ú
íë ì'ë
ð ï'î
÷
vö
õ
ô
T = 100 C
ó 1ñ
ò
Õ
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
¦
§¥
ÿÿ
1þ
½1ü
ûû
1ú
ù
1ø
T = 25 C
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
