• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK 1212-8S
3.3 mm
S
APPLICATIONS
0.75 mm
3.3 mm
1
S
2
S
3
G
• Smart Phones, Tablet PCs, Mobile
Computing
- Battery Switch
- Load Switch
G
S
4
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information:
Si7655DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 20
± 12
- 40
e
- 40
e
- 31
a, b
- 25
a, b
- 100
- 40
e
- 4
a, b
- 20
20
57
36
4.8
a, b
3
a, b
- 50 to 150
260
°C
W
mJ
A
Unit
V
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
t
10
s
Steady State
Symbol
R
thJA
R
thJC
Typical
21
1.7
Maximum
26
2.2
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 20 A
V
GS
= - 4.5 V, I
D
= - 15 A
V
GS
= - 2.5 V, I
D
= - 10 A
V
DS
= - 15 V, I
D
= - 20 A
Min.
- 20
Typ.
Max.
Unit
V
- 12
2.6
- 0.5
- 1.1
± 100
-1
- 10
0.0030
0.0039
0.0062
90
6600
890
930
150
72
12
19
2.6
45
45
100
35
13
10
110
25
0.0036
0.0048
0.0085
mV/
°C
V
nA
µA
A
S
- 20
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 20 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 20 A
f = 1 MHz
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
0.5
pF
225
110
nC
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
5.2
90
90
200
70
25
20
220
50
- 40
c
- 100
- 1.2
60
26
ns
T
C
= 25 °C
I
F
= - 10 A
- 0.75
30
17
15
15
A
V
ns
nC
ns
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 3 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
60
12
T
C
= 25
°C
8
T
C
= 125
°C
T
C
= - 55
°C
40
V
GS
= 2 V
20
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
2.5
Output Characteristics
0.020
9000
Transfer Characteristics
0.016
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 2.5 V
7500
C
iss
6000
0.012
4500
0.008
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
3000
C
oss
1500
C
rss
0
0
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
1.4
I
D
= 20 A
1.3
1.2
Capacitance
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 2.5 V
6
V
DS
= 5 V
4
V
DS
= 16 V
1.1
1.0
0.9
0.8
0.7
- 50
2
0
0
30
60
90
120
150
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.020
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
I
S
- Source Current (A)
10
0.016
0.012
T
J
= 25
°C
1
0.008
T
J
= 125
°C
T
J
= 25
°C
0.004
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
0.9
100
On-Resistance vs. Gate-to-Source Voltage
0.8
80
0.7
Power (W)
75
100
125
150
V
GS(th)
(V)
60
0.6
I
D
= 250 μA
0.5
40
0.4
20
0.3
- 50
- 25
0
25
50
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 us
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25
°C
BVDSS Limited
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7655DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
70
60
50
80
Power (W)
40
30
20
20
10
0
0
25
50
75
100
125
150
0
25
T
C
- Case Temperature (°C)
50
75
100
T
C
- Case Temperature (°C)
125
150
100
I
D
- Drain Current (A)
60
Package Limited
40
0
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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