电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MMBZ6V8AL-13

产品描述Trans Voltage Suppressor Diode, 24W, 4.5V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3
产品类别分立半导体    二极管   
文件大小77KB,共4页
制造商Diodes Incorporated
下载文档 详细参数 选型对比 全文预览

MMBZ6V8AL-13概述

Trans Voltage Suppressor Diode, 24W, 4.5V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3

MMBZ6V8AL-13规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Diodes Incorporated
包装说明R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压7.14 V
最小击穿电压6.46 V
配置COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G3
JESD-609代码e0
最大非重复峰值反向功率耗散24 W
元件数量2
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)235
极性UNIDIRECTIONAL
最大功率耗散0.225 W
认证状态Not Qualified
最大重复峰值反向电压4.5 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间10

文档预览

下载PDF文档
MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Features
NEW PRODUCT
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating
@ 1.0ms (Unidirectional)
225 mW Power Dissipation
Ideally Suited for Automatic Insertion
Low Leakage
E
SOT-23
A
Dim
A
B
TOP VIEW
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
C
B
C
D
E
G
M
L
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Marking Code & Date Code,
See Page 2
Marking Code: See Table Below and Page 2
Weight: 0.008 grams (Approx.)
Ordering Information: See Page 2
ESD Rating Exceeding 16kV per the Human
Body Model (Note 4)
D
G
H
K
J
H
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Peak Power Dissipation (Note 2) MMBZ5V6AL - MMBZ10VAL
Peak Power Dissipation (Note 2) MMBZ15VAL - MMBZ33VAL
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
d
P
pk
P
pk
R
qJA
T
j
,T
STG
Value
225
24
40
556
–65 to +150
Unit
mW
W
W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Type
Number
MMBZ5V6AL
Marking
Code
K9A
V
RWM
Volts
3
I
R
@
V
RWM
mA
5.0
Min
5.32
Breakdown Voltage
V
BR
(Note 3) (V)
Nom
5.6
Max
5.88
@ I
T
mA
20
V
C
@ I
PP
(Note 2)
V
C
V
8.0
I
PP
A
3.0
Typical
Temperature
Coefficient
Tc (mV/°C)
1.8
24 Watt (V
F
= 1.1V max @ I
F
= 200mA)
Type
Number
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
Note:
Marking
Code
K9C
K9D
K9E
V
RWM
Volts
4.5
6.0
6.5
I
R
@
V
RWM
mA
0.5
0.3
0.3
Min
6.46
8.65
9.50
Breakdown Voltage
V
BR
(Note 3) (V)
Nom
6.8
9.1
10
Max
7.14
9.56
10.5
@ I
T
mA
1.0
1.0
1.0
V
C
@ I
PP
(Note 2)
V
C
V
9.6
14
14.2
I
PP
A
2.5
1.7
1.7
Typical
Temperature
Coefficient
Tc (%/°C)
+0.045
+0.065
+0.065
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Non-repetitive current pulse per Figure 2 and derate above T
A
= 25°C per Figure 1.
3. Short duration pulse test used to minimize self-heating effect.
4. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
DS30306 Rev. 6 - 2
1 of 4
www.diodes.com
MMBZ5V6AL - MMBZ33VAL
ã
Diodes Incorporated

MMBZ6V8AL-13相似产品对比

MMBZ6V8AL-13 MMBZ5V6AL-13 MMBZ9V1AL-13
描述 Trans Voltage Suppressor Diode, 24W, 4.5V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3 Trans Voltage Suppressor Diode, 24W, 3V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3 Trans Voltage Suppressor Diode, 24W, 6V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated
包装说明 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
针数 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最大击穿电压 7.14 V 5.88 V 9.56 V
最小击穿电压 6.46 V 5.32 V 8.65 V
配置 COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0 e0
最大非重复峰值反向功率耗散 24 W 24 W 24 W
元件数量 2 2 2
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 235 235 235
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 0.225 W 0.225 W 0.225 W
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 4.5 V 3 V 6 V
表面贴装 YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING
端子位置 SINGLE DUAL SINGLE
处于峰值回流温度下的最长时间 10 10 10

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1291  2069  822  2415  809  26  42  17  49  51 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved