PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs
designed for ultra-linear GSM/EDGE power amplifier applications in
the 920 to 960 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA091201E
Package H-36248-2
PTFA091201F
Package H-37248-2
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 750 mA, ƒ = 959.8 MHz
Features
•
•
Thermally-enhanced packages
Broadband internal matching
Typical EDGE performance
- Average output power = 50 W
- Gain = 19.0 dB
- Efficiency = 44%
Typical CW performance
- Output power at P–1dB = 135 W
- Gain = 18.0 dB
- Efficiency = 64%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Pb-free and RoHS compliant
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
120 W (CW) output power
0
55
50
•
Modulation Spectrum (dBc)
-10
-20
-30
-40
-50
-60
-70
-80
-90
36
38
40
42
44
46
48
50
Efficiency
Drain Efficiency (%)
45
40
35
•
400 kHz
30
25
20
•
•
•
•
600 kHz
15
10
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 50 W, ƒ = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.5
–62
–74
19
44
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 20016-06-21
PTFA091201E
PTFA091201F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
CW Sweep in a Broadband Test Fixture
V
DD
= 28 V, I
DQ
= 750 mA, P
OUT
= 50.79 dBm
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 750 mA, ƒ
1
= 959 MHz, ƒ
2
= 960 MHz
Efficiency
20
60
Efficiency (%)
21
70
-10
-20
-30
Gain (dB)
19
18
17
50
-15
40
-25
30
IMD (dBc)
Gain
3rd Order
-40
-50
-60
-70
37
39
41
43
45
47
49
Return Loss (dB)
5th
7th
16
900
Return Loss
910
920 930
940
950 960
970
-35
20
980
Frequency (MHz)
Output Power, Avg. (dBm)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ
1
= 959, ƒ
2
= 960 MHz,
series show I
DQ
-20
-25
-30
20.5
Power Sweep
V
DD
= 28 V, ƒ = 960 MHz
I
DQ
= 1125 mA
20.0
Power Gain (dB)
IMD (dBc)
-35
-40
-45
-50
-55
-60
37
525 mA
750 mA
19.5
19.0
18.5
18.0
17.5
I
DQ
= 750 mA
I
DQ
= 375 mA
940 mA
39
41
43
45
47
49
40
42
44
46
48
50
52
Output Power, Avg. (dBm)
Output Power (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 10
Rev. 03.1, 2016-06-21
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