HG
FEA TU R ES
The zener voltage are graded according to the international E24
standard. Other voltage tolerance and higher zener voltage
on request
0.5W SILIC O N PLA N A R ZEN ER D IO D ES
D O -3 5
1.083(27.5)
MIN
0.079(2.0)
MAX
DIA
0.150(3.8)
MAX
M EC H A N IC A L D A TA
Case
:
DO-35 glass case
Polarity:
Color band denotes cathode end
Weight
:
Approx. 0.13 gram
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
A BSO LU TE M A XIM UM R A TIN G S(LIM ITIN G V A LU ES)
(T
A
=25 C)
Zener current see table "Characteristics"
Power dissipation at T
A
=50 C
Junction temperature
Storage temperature range
P
tot
T
J
T
STG
500
1)
175
-65 to+175
mW
C
C
1) Valid provided that a distance of 8mm from case are kept at ambient temperature
ELEC TRIC A L C H A RA C TERISTIC S
(T
A
=25 C)
Thermal resistance junction to ambient air
Forward voltage at I
F
=100mA
R
JA
300
1)
1.0
K/W
V
V
F
1) Valid provided that a distance of 8mm from case are kept at ambient temperature
Zener Voltage range
1)
V
Z
NOM
V
BZX 55/C 30
BZX 55/C 33
BZX 55/C 36
BZX 55/C 39
BZX 55/C 43
BZX 55/C 47
BZX 55/C 51
BZX 55/C 56
BZX 55/C 62
BZX 55/C 68
BZX 55/C 75
BZX 55/C 82
BZX 55/C 91
BZX 55/C 100
BZX 55/C 110
BZX 55/C 120
BZX 55/C 130
BZX 55/C 150
BZX 55/C 160
BZX 55/C 180
BZX 55/C 200
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
1
2.5
5
mA
I
ZT
for V
ZT
2)
I
R
and I
R 2)
at V
R
V
mA
<80
<90
<90
<110
<125
<135
<150
<200
<250
<300
<450
<450
<600
<800
<950
<1250
<1400
<1700
<2000
<1500
<2000
<5000
<5000
<5500
<6000
<6500
<7000
<8500
<10000
0.1
0.25
<10
<1000
<0.1
<220
<500
<500
<600
<700
<700
0.5
<5
1
A
A
<2
V
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
TK
V2
%/K
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
77...87
85...96
94...106
104...116
114...127
124...141
138...156
153...171
168...191
188...212
0.04...0.12
0.05...0.12
1) Teated with pulses tp=20ms
2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3) The BZX55-C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to
the negative pole.
BREA K D O W N C H A RA C TER ISTIC S A T T
J
= C O N STA N T (PU LSED )
mA
50
C2V7
40
I
Z
30
T
J
=25 C
C0V8
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
BZX55...
20
Test current I
Z
10
5mA
0
0
1
2
3
4
5
V
Z
6
7
8
9
10 V
BREA K D O W N C H A RA C TER ISTIC S A T T
J
= C O N STA N T (PU LSED )
mA
30
T
J
=25 C
C10
C12
C15
I
Z
20
C18
C22
C27
10
Test current I
Z
5mA
BZX55...
C33
0
0
10
20
V
Z
30
40 V
微控制器 MCU
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