MAXIMUM RATINGS
REPETITIVE PEAK OFF-STATE VOLTAGE AND
REPETITIVE PEAK REVERSE VOLTAGE GATE OPEN,
AND TJ = 110° C
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE)
ON-STATE CURRENT, ONE-CYCLE,
AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, TJ
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT GATE OPEN,
TC = 110° C VDRM & VRRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (PEAK)
AT TC = 25° C AND IT = RATED AMPS
DC HOLDING CURRENT, GATE
OPEN AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, GATE OPEN, TC = 110° C
DC GATE-TRIGGER CURRENT FOR ANODE
VOLTAGE = 12VDC, RL = 60
Ω
AND AT TC = 25° C
DC GATE - TRIGGER VOLTAGE FOR ANODE
VOLTAGE = 12VDC, RL = 60
Ω
AND AT TC = 25° C
GATE-CONTROLLED TURN-ON TIME FOR
TD + TR, IGT = 150 MA AND TC = 25° C
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESSFIT
STUD MOUNT
ISOLATED - STUD MOUNT
SYMBOL VDRM
VDRM &
VRRM
50
100
200
400
600
DEVICE NUMBERS UNITS
*S020
*S120
*S220
*S420
*S620
20
200
2
20
0.5
*S025
*S125
*S225
*S425
*S625
25
250
2
20
0.5
-40 to +150
-40 to +110
*S040
*S140
*S240
*S440
*S640
40
400
2
20
0.5
VOLT
I
T(RMS)
I
TSM
I
GTM
P
GM
P
G(AV)
T
STG
T
OPER
AMP
AMP
AMP
WATT
WATT
°C
°C
IDRM &
IRRM
VTM
IHO
CRITICAL
dv/dt
I
GT
V
GT
T gt
1.0
1.9
50
200
25
2.0
2.5
1.3
1.8
2.0
1.0
1.5
50
200
25
2.0
2.5
1.3
1.8
2.0
1.0
1.6
50
200
25
2.0
2.5
0.9
1.4
1.6
MA
MAX.
VOLT
MAX.
MA
MAX.
V/µSEC.
MA
MAX.
VOLT
MAX.
µSEC.
°C/WATT
TYP
R
θ
J-C
P
SP
SIP
PRESS FIT
PRESS FIT WITH STUD MOUNT
PRESS FIT WITH ISOLATED STUD MOUNT
WARNING
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
*Add prefix for package style desired.
SOLID STATE CONTROL DEVICES
44
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