D2
PA
K
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Rev. 1 — 20 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
see
Figure 6
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 6;
see
Figure 13
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; I
D
= 25 A; V
DS
= 20 V;
see
Figure 14;
see
Figure 15
-
-
-
25
130
-
-
-
1.24
nC
nC
J
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
-
-
Typ
-
-
-
-
2.73
1.88
Max
40
100
306
175
3.2
2.2
Unit
V
A
W
°C
mΩ
mΩ
Static characteristics
Avalanche ruggedness
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
≤
40 V; unclamped;
R
GS
= 50
Ω
[1]
Continuous current is limited by package
NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN2R2-40BS
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Marking
Table 4.
Marking codes
Marking code
PSMN2R2-40BS
Type number
PSMN2R2-40BS
PSMN2R2-40BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2012
2 of 15
NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
5. Limiting values
Table 5.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤
40 V; unclamped; R
GS
= 50
Ω
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
pulsed; t
p
≤
10 µs; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Max
40
40
20
100
100
962
306
175
175
260
100
962
1.24
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
J
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package
300
I
D
(A)
250
003aag903
120
P
der
(%)
80
03aa16
200
150
100
(1)
40
50
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature.
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN2R2-40BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2012
3 of 15
NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
003aad316
t
p
= 10
μs
10
2
(1)
100
μs
DC
10
1 ms
10 ms
100 ms
1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN2R2-40BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2012
4 of 15
NXP Semiconductors
PSMN2R2-40BS
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
Minimum foot print; mounted in a
printed circuit board
Min
-
-
Typ
0.25
50
Max
0.5
-
Unit
K/W
K/W
1
Z
th (j-mb)
(K/W)
10
-1
δ
= 0.5
0.2
0.1
10
-2
003aad100
0.05
0.02
P
δ
=
t
p
T
10
-3
single shot
10
-4
10
-6
t
p
T
t
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R2-40BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 20 March 2012
5 of 15
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