BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
Product overview
Package
NXP
BCM847BV
BCM847BS
BCM847DS
SOT666
SOT363
SOT457
JEITA
-
SC-88
SC-74
PNP/PNP
complement
BCM857BV
BCM857BS
BCM857DS
Matched version of
BC847BV
BC847BS
-
Type number
1.2 Features
I
Current gain matching
I
Base-emitter voltage matching
I
Drop-in replacement for standard double transistors
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
290
Max
45
100
450
Unit
V
mA
Per transistor
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
Quick reference data
…continued
Parameter
h
FE
matching
V
BE
matching
Conditions
V
CE
= 5 V;
I
C
= 2 mA
V
CE
= 5 V;
I
C
= 2 mA
[1]
Table 2.
Symbol
Per device
h
FE1
/h
FE2
V
BE1
−V
BE2
Min
0.9
-
Typ
1
-
Max
-
2
Unit
[2]
mV
[1]
[2]
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
001aab555
sym020
Simplified outline
6
5
4
Symbol
6
5
4
TR2
TR1
1
2
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BCM847BV
BCM847BS
BCM847DS
-
SC-88
SC-74
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT666
SOT363
SOT457
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
3A
M1*
R6
Type number
BCM847BV
BCM847BS
BCM847DS
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
2 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
SOT363
SOT457
Per device
P
tot
total power dissipation
SOT666
SOT363
SOT457
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1][2]
[1]
[1]
Min
-
-
-
-
-
Max
50
45
6
100
200
Unit
V
V
V
mA
mA
Per transistor
-
-
-
200
200
250
mW
mW
mW
T
amb
≤
25
°C
[1][2]
[1]
[1]
-
-
-
-
−65
−65
300
300
380
150
+150
+150
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT666
SOT363
SOT457
Conditions
in free air
[1][2]
[1]
[1]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
-
-
625
625
500
K/W
K/W
K/W
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
3 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
Thermal characteristics
…continued
Parameter
thermal resistance from
junction to ambient
SOT666
SOT363
SOT457
Conditions
in free air
[1][2]
[1]
[1]
Table 7.
Symbol
Per device
R
th(j-a)
Min
Typ
Max
Unit
-
-
-
-
-
-
416
416
328
K/W
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off
current
DC current gain
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 10
µA
V
CE
= 5 V;
I
C
= 2 mA
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BE
base-emitter voltage
V
CE
= 5 V;
I
C
= 2 mA
V
CE
= 5 V;
I
C
= 10 mA
C
c
collector capacitance
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V;
I
C
= i
c
= 0 A;
f = 1 MHz
[1]
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
µA
Per transistor
-
-
200
-
-
-
-
610
-
-
-
250
290
50
200
760
910
660
-
-
100
-
450
200
400
-
-
710
770
1.5
nA
mV
mV
mV
mV
mV
mV
pF
[1]
[2]
[2]
C
e
emitter capacitance
-
11
-
pF
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
4 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
Table 8.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified
Symbol
f
T
Parameter
transition frequency
Conditions
V
CE
= 5 V;
I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V;
I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 10 Hz to
15.7 kHz
V
CE
= 5 V;
I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
h
FE1
/h
FE2
h
FE
matching
V
CE
= 5 V;
I
C
= 2 mA
V
CE
= 5 V;
I
C
= 2 mA
[3]
Min
100
Typ
250
Max
-
Unit
MHz
NF
noise figure
-
2.8
-
dB
-
3.3
-
dB
0.9
-
1
-
-
2
mV
V
BE1
−V
BE2
V
BE
matching
[4]
[1]
[2]
[3]
[4]
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
5 of 15
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