TST0913
SiGe Power Amplifier for GSM 1800/1900 (DCS/PCS)
Description
The TST0913 is a monolithic integrated power amplifier.
The device is manufactured using Atmel Wireless &
Microcontrollers’ advanced Silicon-Germanium (SiGe)
technology and has been designed for use in GSM
1800/1900-MHz (DCS/PCS) mobile phones.
With a single supply voltage operation
of 3 V and a neglectable leakage current
in power-down mode, the TST0913 needs
few external components.
Electrostatic sensitive device.
Observe precautions for handling.
Features
D
32 dBm output power
D
Power-added efficiency (PAE) 42%
D
Single supply operation at 3 V
no negative voltage necessary
D
Current consumption in power-down mode
≤
10
µA,
no external power-supply switch required
D
Power-ramp control
D
Simple input and output matching
D
Simple output matching for maximum flexibility
D
SMD package (PSSOP16 with heat slug)
Block Diagram
8
9
7
Control
10
11
RF
in
(1800/1900 MHz)
6
12
Match
Match
Match
13
14
5
V
CC1
1
2
3
4 16
GND
15
14746
V
CTL
V
CC,CTL
GND
RF
out
/V
CC3
(1800/1900 MHz)
Harmonic tuning
V
CC2
Figure 1. Block diagram
Ordering Information
Extended Type Number
TST0913-TJS
TST0913-TJQ
PSSOP16
PSSOP16
Package
Tube
Taped and reeles
Remarks
Rev. A2, 29-Sep-00
1 (6)
Preliminary Information
TST0913
Pin Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
V
CC2
V
CC2
V
CC2
GND
V
CC1
RF
in
GND
V
CTL
V
CC,CTL
Function
Supply voltage 2
Supply voltage 2
Supply voltage 2
Ground
Supply voltage 1
RF input
Ground (control)
Control input
Supply voltage for control
RF
in
GND
6
7
11 RF
out
/V
CC3
10 RF
out
/V
CC3
9 V
CC,CTL
V
CC1
5
12 RF
out
/V
CC3
GND
4
13 RF
out
/V
CC3
V
CC2
3
14 RF
out
/V
CC3
V
CC2
V
CC2
1
2
16 GND
15 RF
out
/V
CC3
RF
out
/V
CC3
RF output / supply voltage 3
RF
out
/V
CC3
RF output / supply voltage 3
RF
out
/V
CC3
RF output / supply voltage 3
RF
out
/V
CC3
RF output / supply voltage 3
RF
out
/V
CC3
RF output / supply voltage 3
RF
out
/V
CC3
RF output / supply voltage 3
GND
Ground
V
CTL
8
Figure 2. Pinning
Absolute Maximum Ratings
All voltages refer to GND
Parameter
Supply voltage V
CC
Pins 5,
1, 2, 3,
10, 11, 12, 13, 14, 15
and 9
Pin 6
Pin 8
Symbol
V
CC1
,
V
CC2
V
CC3,
V
CC, CTL
P
in
V
CTL
t
burst
T
j
T
stg
– 40
0
Min.
Max.
5.0
Unit
V
Input power
Gain-control voltage
Duty cycle for operation
Burst duration
Junction temperature
Storage temperature
6
2.2
25
1.2
+ 150
+150
dBm
V
%
ms
°C
°C
Thermal Resistance
Parameter
Junction ambient
Symbol
R
thJA
Value
t.b.d.
Unit
K/W
2 (6)
Rev. A2, 29-Sep-00
Preliminary Information
TST0913
Operating Range
All voltages refer to GND
Parameter
Supply voltage
Ambient temperature
Input frequency
Symbol
V
CC1,
V
CC2,
V
CC3
, V
CC, CTL
T
amb
f
in
Min.
2.4
– 25
1800/1900
Typ.
3.5
Max.
4.5
+ 85
Unit
V
°C
MHz
Rev. A2, 29-Sep-00
3 (6)
Preliminary Information
TST0913
Electrical Characteristics
Test conditions: V
CC
= V
CC1
, V
CC2
, V
CC3,
V
CC, CTL
= 3.5 V, V
CTL
= 1.5 V, T
amb
= + 25°C (see application circuit)
Parameter
Power supply
Supply voltage
Current consumption
Current consumption
RF input
Frequency range
Input impedance *)
Input power
Input VSWR *)
RF output
Output impedance *)
Output power
P
in
= 0 dBm, R
L
= RG = 50
Ω
V
CC
= 3.5 V, T
amb
= +25°C
V
CC
= 2.7 V, T
amb
= +85°C
V
CTL
= 0.5 V
P
out
= 26 dBm
P
out
= 28 dBm
P
out
= 31.5 dBm
T
amb
= –25 to + 85
°C
P
out
= 31.5 dBm all phases
PAE
25
35
42
10 : 1
10 : 1
–35
–35
– 71
– 71
t
r
, t
f
P
in
= 0 to 6 dBm,
V
CTL
≤
0.2 V (power down)
Pout
≥
25 dBm
V
CTRL
= 0.3 to 2.0 V
V
CTL
P
in
= 0 to 6 dBm,
V
CTL
= 0 to 2.2 V
I
CTL
50
0.3
2.0
200
48
0.5
dBc
dBc
dBm
dBm
µs
dB
Z
o
P
out
31.7
30.0
50
32.5
30.5
– 20
W
dBm
dBm
dBm
%
P
in
= 0 to 6 dBm, P
out
= 31.5 dBm
DCS
PCS
f
in
Z
i
P
in
VSWR
1710
1850
50
0
6
2:1
1785
1910
MHz
MHz
W
dBm
Active mode
P
out
= 32 dBm, PAE = 42%
Power-down mode V
CTL
≤
0.2 V
V
CC
I
1.1
I
10
A
µA
2.7
3.5
4.5
V
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Minimum output power
Power-added efficiency at
P
out,max
Stability
Load mismatch (stable, no de-
mage)
Second harmonic distortion
Third harmonic distortion
Noise power
VSWR
VSWR
2f
o
3f
o
P
out
= 31.5 dBm, RBW = 100 kHz
f = 1805 to 1880 MHz (DCS)
f = 1930 to 1990 MHz (PCS)
Rise and fall time
Isolation between input and out-
put
Power control
Control curve slope
Power-control range
Control-voltage range
Control current
*)
150
dB/ V
dB
V
µA
with external matching (see application circuit)
4 (6)
Rev. A2, 29-Sep-00
Preliminary Information
TST0913
Application Circuit
V
C1
100nF
C10 220nF
C2
220nF
CC
T1
T2
1
2
16
T8
15
harmonic tuning
14
T7
13
12
11
10
Control
9
C7
1 nF
C8
3.9pF
AVX
C12
10pF
T6
C11
10pF
C3
8.2pF AVX
T3
C4
12pF
C5
T4
1/4 wavelength line
RF
3
4
5
OUT
C9 1800/1900 MHz
6.8pF
AVX
RF
IN
1800/1900 MHz
L1
1.8nH
V
6
2.2pF
AVX
T5
7
C6
22pF
8
CTL
16504
Figure 3. Application circuit
Package Information
Package PSSOP16
Dimensions in mm
4.98
4.80
1.60
1.45
0.25
0.64
4.48
16
9
0.10
0.00
3.91
6.02
0.2
2.21
1.80
technical drawings
according to DIN
specifications
1
3.12
2.72
8
13048
Rev. A2, 29-Sep-00
5 (6)
Preliminary Information
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