PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Very low diode capacitance: C
d
= 11 pF
Max. peak pulse power: P
PP
= 45 W
Low clamping voltage: V
CL
= 12.5 V
Ultra low leakage current: I
RM
< 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 4.8 A
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
11
Max
5
13
Unit
V
pF
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode 1
cathode 2
[1]
Simplified outline
Graphic symbol
1
2
006aab041
1
2
Transparent
top view
[1]
The marking bar indicates pin 1.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0V1BLD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1
×
0.6
×
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
0111 0000
Type number
PESD5V0V1BLD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
PESD5V0V1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2010
2 of 14
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
Per device
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1]
[1]
Min
-
-
-
−55
−65
Max
45
4.8
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
-
Max
30
2
16
Unit
kV
kV
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PESD5V0V1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2010
3 of 14
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
r
dyn
[1]
[2]
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
Conditions
V
RWM
= 5 V
I
R
= 5 mA
f = 1 MHz;
V
R
= 0 V
I
PP
= 4.8 A
I
R
= 10 A
[1]
[2]
Min
-
-
5.8
-
-
-
Typ
-
<1
6.8
11
-
0.2
Max
5
10
7.8
13
12.5
-
Unit
V
nA
V
pF
V
Ω
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0V1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2010
4 of 14
NXP Semiconductors
PESD5V0V1BLD
Very low capacitance bidirectional ESD protection diode
10
3
P
PP
(W)
10
2
006aab606
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
0.4
1
1
10
10
2
t
p
(μs)
10
3
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 4.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 5.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aab608
12
C
d
(pF)
10
006aab607
10
3
I
RM
I
RM(25°C)
10
2
10
1
8
10
−1
6
0
1
2
3
4
V
R
(V)
5
10
−2
−100
−50
0
50
100
T
j
(°C)
150
f = 1 MHz; T
amb
= 25
°C
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
Fig 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD5V0V1BLD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2010
5 of 14
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