DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D049
BB135
UHF variable capacitance diode
Product specification
Supersedes data of 1998 Sep 15
2004 Mar 01
NXP Semiconductors
Product specification
UHF variable capacitance diode
FEATURES
Excellent linearity
Very small plastic SMD package.
C28: 1.9 pF; ratio: 10
Low series resistance.
APPLICATIONS
Electronic tuning in UHF television tuners.
Radio upconversion concepts
VCO.
PINNING
PIN
1
2
BB135
DESCRIPTION
cathode
anode
1
2
sym008
DESCRIPTION
The BB135 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
The matched type, BB134 has the same specification.
Marking code: P5.
Cathode side indicated by a bar.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BB135
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
55
55
MIN.
30
20
+150
+125
MAX.
V
mA
C
C
UNIT
2004 Mar 01
2
NXP Semiconductors
Product specification
UHF variable capacitance diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
R
r
s
C
d
C
d
0.5V
-------------------
-
C
d
28V
Note
1. V
R
is the value at which C
d
= 9 pF.
PARAMETER
reverse current
diode series resistance
diode capacitance
capacitance ratio
CONDITIONS
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
C;
see Fig.3
f = 470 MHz; note 1
V
R
= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
17.5
1.7
8.9
MIN.
MAX.
10
200
0.75
21
2.1
12
BB135
UNIT
nA
nA
pF
pF
2004 Mar 01
3
NXP Semiconductors
Product specification
UHF variable capacitance diode
GRAPHICAL DATA
BB135
MBE874
handbook, full pagewidth
20
Cd
(pF)
16
12
8
4
0
10
−1
f = 1 MHz; T
j
= 25
C.
1
10
V
R
(V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
3
handbook, halfpage
MLC816
10
3
handbook, halfpage
MLC815
IR
(nA)
TC d
(K
−1
)
10
2
10
4
10
0
50
T j (
o
C)
100
10
5
10
1
1
10
VR (V)
10
2
T
j
= 0 to 85
C.
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
2004 Mar 01
4
NXP Semiconductors
Product specification
UHF variable capacitance diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
BB135
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
2004 Mar 01
5
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