PESD5V0V1BCSF
Ultra low profile bidirectional very low capacitance
ESD protection diode
Rev. 1 — 2 September 2011
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Very low diode capacitance C
d
= 5.3 pF
ESD protection up to
20
kV according to IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
C
d
[1]
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V
R
= 0 V
[1]
Min
5
4
Typ
-
5.3
Max
5
6
Unit
V
pF
This parameter is guaranteed by design.
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
1
2
1
sym045
Simplified outline
Graphic symbol
2
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0V1BCSF
-
Description
leadless ultra small package; 2 terminals;
body 0.6
0.3
0.3 mm
Version
SOD962
Type number
4. Marking
Table 4.
Marking codes
Marking code
C
Type number
PESD5V0V1BCSF
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1][2]
[1][2]
Min
-
-
-
55
65
Max
8
1
150
+150
+150
Unit
W
A
C
C
C
Non-repetitive current pulse 8/20
s
exponentially decaying waveform according to IEC61000-4-5;
see
Figure 1.
Measured from pin 1 to pin 2.
PESD5V0V1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
2 of 13
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
ESD maximum ratings
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
IEC 61000-4-2
(air discharge)
[1][2]
Table 6.
Symbol
V
ESD
Min
-
-
Max
20
20
Unit
kV
kV
[1]
[2]
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ESD pulses; see
Figure 2.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air)
> 8 kV (contact)
IEC 61000-4-2, level 4 (ESD)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0V1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
3 of 13
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
CL
V
BR
C
d
reverse standoff
voltage
reverse leakage
current
clamping voltage
breakdown voltage
diode capacitance
V
RWM
= 5 V
I
PP
= 0.5 A
I
PP
= 1 A
I
R
= 1 mA
I
R
=
1
mA
f = 1 MHz
V
R
= 0 V
V
R
= 2.5 V
V
R
= 5 V
L
S
R
dyn
[1]
[2]
[3]
[4]
[5]
[6]
[1][2]
[1][2]
[3]
[3]
[4]
Parameter
Conditions
Min
5
-
-
-
6
10
4
-
-
[5]
[6]
Typ
-
1
-
-
-
-
5.3
4.3
4.1
0.05
2.5
Max
5
100
11.5
12.8
10
6
6
5
4.7
-
-
Unit
V
nA
V
V
V
V
pF
pF
pF
nH
series inductance
dynamic resistance
-
-
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5;
see
Figure 1.
Measured from pin 1 to pin 2.
Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
This parameter is guaranteed by design.
Calculated from S-parameter values.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0V1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
4 of 13
NXP Semiconductors
PESD5V0V1BCSF
Bidirectional very low capacitance ESD protection diode
6
C
d
(pF)
5
018aaa135
I
PP
4
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
3
−
+
2
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa676
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
ESD TESTER
R
Z
C
Z
RG 223/U
50 Ω coax
DEVICE
UNDER
TEST
018aaa136
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330 Ω
Fig 5.
ESD clamping test setup
PESD5V0V1BCSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
5 of 13
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